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End date: 2020 × Start date: 2016 × DDC: 690 × Publisher: Oxford : Elsevier Science ×

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    A promising approach to low electrical percolation threshold in PMMA nanocomposites by using MWCNT-PEO predispersions
    (Oxford : Elsevier Science, 2016) Mir, Seyed Mohammad; Jafari, Seyed Hassan; Khonakdar, Hossein Ali; Krause, Beate; Pötschke, Petra; Taheri Qazvini, Nader
    Electrical conductive poly(methyl methacrylate) (PMMA) nanocomposites with low percolation threshold are very challenging to be prepared. Here, we show that the miscibility between poly(ethylene oxide) (PEO) as matrix for predispersions of multi-walled carbon nanotubes (MWCNTs) and PMMA represents an efficient approach to achieve very low electrical percolation threshold. PMMA/PEO-MWCNTs nanocomposites were prepared by a two-step solution casting method involving pre-mixing of MWCNTs with PEO and then mixing of PEO-MWCNTs with PMMA, resulting in a PMMA/PEO ratio of 80/20 wt%. The electrical percolation threshold (EPT) value was determined to be ~ 0.07 wt% which is significantly lower than most of the reported EPT values in the literature for PMMA/CNT composites. The very low electrical percolation threshold was attributed to the effectual role of PEO in self-assembly of secondary structures of nanotubes into an electrically conductive network. This was further confirmed by transmission electron microscopy and by comparing the obtained EPT value with the prediction of the excluded volume model in which statistical percolation threshold is defined based on uniform distribution of high-aspect ratio sticks in a matrix. Moreover, based on UV–Vis measurements and linear viscoelastic rheological measurements, optical and rheological percolation thresholds were obtained at nearly 0.01 wt% and 0.5 wt%, respectively.
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    Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties
    (Oxford : Elsevier Science, 2020) Kraft, Nikolas; Wang, Guoxiang; Bryja, Hagen; Prager, Andrea; Griebel, Jan; Lotnyk, Andriy
    Ge-Sb-Te alloys are promising materials for non-volatile memory applications. Alloying of the materials with various elements is considered as prospective approach to enhance material properties. This work reports on the preparation and characterization of pure Ge-Sb-Te-O (GSTO) and alloyed with La-Sr-Mn-O (LSMO) thin films. Thermal heating of amorphous thin films to different temperatures show distinct crystallization behavior. A general trend is the decrease in the size of GSTO crystallites and the suppression in the formation of stable trigonal GSTO phase with increasing content of LSMO. Microstructural studies by transmission electron microscopy show the formation of metastable GSTO nanocrystallites dispersed in the amorphous matrix. Analysis of local chemical bonding by X-ray spectroscopy reveal the presence of different oxides in the GSTO-LSMO composites. Moreover, the composites with a high LSMO content exhibit higher crystallization temperature and significant larger sheet resistance in amorphous and crystalline phase, while a memory device made of GSTO-LSMO alloy reveals bipolar switching and synaptic behavior. In addition, the amount of LSMO in GSTO-LSMO thin films influences their optical properties and band gap. Overall, the results of this work reveal the highly promising potential of GSTO-LSMO nanocomposites for data storage and reconfigurable photonic applications as well as neuro-inspired computing.