100 results
Search Results
Now showing 1 - 10 of 100
- ItemMultiple lobes in the far-field distribution of terahertz quantum-cascade lasers due to self-interference(New York : American Institute of Physics, 2016) Röben, B.; Wienold, M.; Schrottke, L.; Grahn, H.T.The far-field distribution of the emission intensity of terahertz (THz) quantumcascade lasers (QCLs) frequently exhibits multiple lobes instead of a single-lobed Gaussian distribution. We show that such multiple lobes can result from selfinterference related to the typically large beam divergence of THz QCLs and the presence of an inevitable cryogenic operation environment including optical windows. We develop a quantitative model to reproduce the multiple lobes. We also demonstrate how a single-lobed far-field distribution can be achieved.
- ItemThermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces(New York : American Institute of Physics, 2017) Bragaglia, Valeria; Mio, Antonio M.; Calarco, RaffaellaA high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.
- ItemOn the Promotion of Catalytic Reactions by Surface Acoustic Waves(Weinheim : Wiley-VCH, 2020) von Boehn, Bernhard; Foerster, Michael; von Boehn, Moritz; Prat, Jordi; Macià , Ferran; Casals, Blai; Khaliq, Muhammad Waqas; Hernández-MÃnguez, Alberto; Aballe, Lucia; Imbihl, RonaldSurface acoustic waves (SAW) allow to manipulate surfaces with potential applications in catalysis, sensor and nanotechnology. SAWs were shown to cause a strong increase in catalytic activity and selectivity in many oxidation and decomposition reactions on metallic and oxidic catalysts. However, the promotion mechanism has not been unambiguously identified. Using stroboscopic X-ray photoelectron spectro-microscopy, we were able to evidence a sub-nanosecond work function change during propagation of 500 MHz SAWs on a 9 nm thick platinum film. We quantify the work function change to 455 μeV. Such a small variation rules out that electronic effects due to elastic deformation (strain) play a major role in the SAW-induced promotion of catalysis. In a second set of experiments, SAW-induced intermixing of a five monolayers thick Rh film on top of polycrystalline platinum was demonstrated to be due to enhanced thermal diffusion caused by an increase of the surface temperature by about 75 K when SAWs were excited. Reversible surface structural changes are suggested to be a major cause for catalytic promotion. © 2020 The Authors. Published by Wiley-VCH GmbH
- ItemMagnetic properties of GaAs-Fe3Si core-shell nanowires — A comparison of ensemble and single nanowire investigation(New York : American Institute of Physics, 2017) Hilse, Maria; Jenichen, Bernd; Herfort, JensOn the basis of semiconductor-ferromagnet GaAs-Fe3Si core-shell nanowires (Nws) we compare the facilities of magnetic Nw ensemble measurements by superconducting quantum interference device magnetometry versus investigations on single Nws by magnetic force microscopy and computational micromagnetic modeling. Where a careful analysis of ensemble measurements backed up by transmission electron microscopy gave no insights on the properties of the Nw shells, single Nw investigation turned out to be absolutely essential.
- ItemKinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1−x)2O3(New York : American Institute of Physics, 2016) Vogt, Patrick; Bierwagen, OliverWe present a detailed study of the reaction kinetics and thermodynamics of the plasma-assisted oxide molecular beam epitaxy of the ternary compound (InxGa1−x)2O3 for 0 ≤ x ≤ 1. We measured the growth rate of the alloy in situ by laser reflectrometry as a function of growth temperature T G for different metal-to-oxygen flux ratios r Me, and nominal In concentrations x nom in the metal flux. We determined ex situ the In and Ga concentrations in the grown film by energy dispersive X-ray spectroscopy. The measured In concentration x shows a strong dependence on the growth parameters T G, r Me, and x nom whereas growth on different co-loaded substrates shows that in the macroscopic regime of ∼μm3 x does neither depend on the detailed layer crystallinity nor on crystal orientation. The data unveil that, in presence of In, Ga incorporation is kinetically limited by Ga2O desorption the same way as during Ga2O 3 growth. In contrast, In incorporation during ternary growth is thermodynamically suppressed by the presence of Ga due to stronger Ga–O bonds. Our experiments revealed that Ga adatoms decompose/etch the In–O bonds whereas In adatoms do not decompose/etch the Ga–O bonds. This result is supported by our thermochemical calculations. In addition we found that a low T G and/or excessively low r Me kinetically enables In incorporation into (InxGa1−x)2O3. This study may help growing high-quality ternary compounds (InxGa1−x)2O3 allowing band gap engineering over the range of 2.7–4.7 eV.
- ItemX-ray diffraction from strongly bent crystals and spectroscopy of X-ray free-electron laser pulses(Oxford [u.a.] : Blackwell, 2020) Kaganer, Vladimir M.; Petrov, Ilia; Samoylova, LiubovThe use of strongly bent crystals in spectrometers for pulses of a hard X-ray free-electron laser is explored theoretically. Diffraction is calculated in both dynamical and kinematical theories. It is shown that diffraction can be treated kinematically when the bending radius is small compared with the critical radius given by the ratio of the Bragg-case extinction length for the actual reflection to the Darwin width of this reflection. As a result, the spectral resolution is limited by the crystal thickness, rather than the extinction length, and can become better than the resolution of a planar dynamically diffracting crystal. As an example, it is demonstrated that spectra of the 12 keV pulses can be resolved in the 440 reflection from a 20 µm-thick diamond crystal bent to a radius of 10 cm. open access.
- ItemElectrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms(Washington, DC : ACS, 2017) Huang, Huiying; Trotta, Rinaldo; Huo, Yongheng; Lettner, Thomas; Wildmann, Johannes S.; MartÃn-Sánchez, Javier; Huber, Daniel; Reindl, Marcus; Zhang, Jiaxiang; Zallo, Eugenio; Schmidt, Oliver G.; Rastelli, ArmandoWe demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.
- ItemGrowth of crystalline phase change materials by physical deposition methods(Abingdon : Taylor & Francis Group, 2017) Boschker, Jos E.; Calarco, RaffaellaPhase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offered by epitaxial films, are needed in order to study the fundamental properties of phase change materials and to improve our understanding of this materials class. Here, we review the progress made in the growth of crystalline phase change materials by physical methods, such as molecular beam epitaxy, sputtering, and pulsed laser deposition. First, we discuss the difference and similarities between these physical deposition methods and the crystal structures of Ge2Sb2Te5, the prototype phase change material. Next, we focus on the growth of epitiaxial GST films on (0 0 1)- and (1 1 1)-oriented substrates, leading to the conclusion that (1 1 1)-oriented substrates are preferred for the growth of phase change materials. Finally, the growth of GeTe/Sb2Te3 superlattices on amorphous and single crystalline substrates is discussed.
- ItemContinuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination(New York : American Institute of Physics, 2017) Hempel, Martin; Röben, Benjamin; Niehle, Michael; Schrottke, Lutz; Trampert, Achim; Grahn, Holger T.The dynamical tuning due to rear facet illumination of single-mode, terahertz (THz) quantum-cascade lasers (QCLs) which employ distributed feedback gratings are compared to the tuning of single-mode QCLs based on two-section cavities. The THz QCLs under investigation emit in the range of 3 to 4.7 THz. The tuning is achieved by illuminating the rear facet of the QCL with a fiber-coupled light source emitting at 777 nm. Tuning ranges of 5.0 and 11.9 GHz under continuous-wave and pulsed operation, respectively, are demonstrated for a single-mode, two-section cavity QCL emitting at about 3.1 THz, which exhibits a side-mode suppression ratio better than -25 dB.
- ItemTextured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy(New York : American Institute of Physics, 2017) Boschker, Jos E.; Tisbi, E.; Placidi, E.; Momand, Jamo; Redaelli, Andrea; Kooi, Bart J.; Arciprete, Fabrizio; Calarco, RaffaellaThe realization of textured films of 2-dimensionally (2D) bonded materials on amorphous substrates is important for the integration of this material class with silicon based technology. Here, we demonstrate the successful growth by molecular beam epitaxy of textured Sb2Te3 films and GeTe/Sb2Te3 superlattices on two types of amorphous substrates: carbon and SiO2. X-ray diffraction measurements reveal that the out-of-plane alignment of grains in the layers has a mosaic spread with a full width half maximum of 2.8°. We show that a good texture on SiO2 is only obtained for an appropriate surface preparation, which can be performed by ex situ exposure to Ar+ ions or by in situ exposure to an electron beam. X-ray photoelectron spectroscopy reveals that this surface preparation procedure results in reduced oxygen content. Finally, it is observed that film delamination can occur when a capping layer is deposited on top of a superlattice with a good texture. This is attributed to the stress in the capping layer and can be prevented by using optimized deposition conditions of the capping layer. The obtained results are also relevant to the growth of other 2D materials on amorphous substrates.