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    Remarkable Mechanochromism in Blends of a π-Conjugated Polymer P3TEOT: The Role of Conformational Transitions and Aggregation
    (Weinheim : Wiley-VCH, 2020) Zessin, Johanna; Schnepf, Max; Oertel, Ulrich; Beryozkina, Tetyana; König, Tobias A.F.; Fery, Andreas; Mertig, Michael; Kiriy, Anton
    A novel mechanism for well-pronounced mechanochromism in blends of a π-conjugated polymer based on reversible conformational transitions of a chromophore rather than caused by its aggregation state, is exemplified. Particularly, a strong stretching-induced bathochromic shift of the light absorption, or hypsochromic shift of the emission, is found in blends of the water-soluble poly(3-tri(ethylene glycol)) (P3TEOT) embedded into the matrix of thermoplastic polyvinyl alcohol. This counterintuitive phenomenon is explained in terms of the concentration dependency of the P3TEOT's aggregation state, which in turn results in different molecular conformations and optical properties. A molecular flexibility, provided by low glass transition temperature of P3TEOT, and the fact that P3TEOT adopts an intermediate, moderately planar conformation in the solid state, are responsible for the unusual complex mechanochromic behavior. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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    Waveguide-Integrated Broadband Spectrometer Based on Tailored Disorder
    (Weinheim : Wiley-VCH Verlag, 2020) Hartmann, Wladick; Varytis, Paris; Gehring, Helge; Walter, Nicolai; Beutel, Fabian; Busch, Kurt; Pernice, Wolfram
    Compact, on-chip spectrometers exploiting tailored disorder for broadband light scattering enable high-resolution signal analysis while maintaining a small device footprint. Due to multiple scattering events of light in the disordered medium, the effective path length of the device is significantly enhanced. Here, on-chip spectrometers are realized for visible and near-infrared wavelengths by combining an efficient broadband fiber-to-chip coupling approach with a scattering area in a broadband transparent silicon nitride waveguiding structure. Air holes etched into a structured silicon nitride slab terminated with multiple waveguides enable multipath light scattering in a diffusive regime. Spectral-to-spatial mapping is performed by determining the transmission matrix at the waveguide outputs, which is then used to reconstruct the probe signals. Direct comparison with theoretical analyses shows that such devices can be used for high-resolution spectroscopy from the visible up to the telecom wavelength regime. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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    Narrow Stimulated Resonance Raman Scattering and WGM Lasing in Small Conjugated Polymer Particles for Live Cell Tagging and Tracking
    (Weinheim : Wiley-VCH, 2020) Haehnle, Bastian; Lamla, Markus; Sparrer, Konstantin M.J.; Gather, Malte C.; Kuehne, Alexander J.C.
    Conjugated polymer particles are brightly fluorescing and stable materials for live cell imaging. Combination of conjugated polymers with a whispering gallery mode (WGM) resonator allows laser emission from microscale particles. Once internalized by cells, the mode pattern of the laser emission can be used for tagging and tracking, as each laser spectrum represents a bar code to identify individual cells. However, currently these particle systems are limited by their large size, which might interfere with cellular functions. Here, stimulated resonance Raman scattering (SRRS) in small conjugated polymer microparticles is presented as a new method for generating narrow emission as an alternative to WGM-based laser emission. This opens up spectral range for multiplexing optical readout and multicolor imaging of live cells. The synthesis of monodisperse micrometer-sized poly(fluorene-co-divinylbenzene) particles is discussed and their WGM and SRRS emission are characterized. Finally, how these particles and their emission can be employed in live cell imaging and tagging is showcased. © 2020 The Authors. Advanced Optical Materials published by Wiley-VCH GmbH
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    The Potential of Combining Thermal Scanning Probes and Phase-Change Materials for Tunable Metasurfaces
    (Weinheim : Wiley-VCH, 2020) Michel, Ann-Katrin U.; Meyer, Sebastian; Essing, Nicolas; Lassaline, Nolan; Lightner, Carin R.; Bisig, Samuel; Norris, David J.; Chigrin, Dmitry N.
    Metasurfaces allow for the spatiotemporal variation of amplitude, phase, and polarization of optical wavefronts. Implementation of active tunability of metasurfaces promises compact flat optics capable of reconfigurable wavefront shaping. Phase-change materials (PCMs) are a prominent material class enabling reconfigurable metasurfaces due to their large refractive index change upon structural transition. However, commonly employed laser-induced switching of PCMs limits the achievable feature sizes and restricts device miniaturization. Thermal scanning-probe-induced local switching of the PCM germanium telluride is proposed to realize near-infrared metasurfaces with feature sizes far below what is achievable with diffraction-limited optical switching. The design is based on a planar multilayer and does not require fabrication of protruding resonators as commonly applied in the literature. Instead, it is numerically demonstrated that a broad-band tuning of perfect absorption can be realized by the localized tip-induced crystallization of the PCM. The spectral response of the metasurface is explained using resonance mode analysis and numerical simulations. To facilitate experimental realization, a theoretical description of the tip-induced crystallization employing multiphysics simulations is provided to demonstrate the great potential for fabricating compact reconfigurable metasurfaces. The concept can be applied not only for plasmonic sensing and spatial frequency filtering, but also be transferred to all-dielectric metasurfaces. © 2020 Wiley-VCH GmbH
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    Tunable Circular Dichroism by Photoluminescent Moiré Gratings
    (Weinheim : Wiley-VCH, 2020) Aftenieva, Olha; Schnepf, Max; Mehlhorn, Börge; König, Tobias A.F.
    In nanophotonics, there is a current demand for ultrathin, flexible nanostructures that are simultaneously easily tunable, demonstrate a high contrast, and have a strong response in photoluminescent polarization. In this work, the template-assisted self-assembly of water-dispersed colloidal core–shell quantum dots into 1D light-emitting sub-micrometer gratings on a flexible substrate is demonstrated. Combining such structures with a light-absorbing metallic counterpart by simple stacking at various angles results in a tunable Moiré pattern with strong lateral contrast. Furthermore, a combination with an identical emitter-based grating leads to a chiroptical effect with a remarkably high degree of polarization of 0.72. Such a structure demonstrates direct circular polarized photoluminescence, for the first time, without a need for an additional chiral template as an intermediary. The suggested approach allows for reproducible, large-area manufacturing at reasonable costs and is of potential use for chiroptical sensors, photonic circuit applications, or preventing counterfeit. © 2020 The Authors. Advanced Optical Materials published by Wiley-VCH GmbH
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    Solid carbon active screen plasma nitrocarburizing of AISI 316L stainless steel in cold wall reactor: influence of plasma conditions
    (Rio de Janeiro : Elsevier, 2020) Jafarpour, Saeed M.; Puth, Alexander; Dalke, Anke; Böcker, Jan; Pipa, AndreiV.; Röpcke, Jürgen; van Helden, Jean-Pierre H.; Biermann, Horst
    Low temperature plasma nitrocarburizing processes are widely used surface treatment techniques to improve the surface hardness and wear resistance of stainless steels without loss of their excellent corrosion resistance. In the present study, plasma nitrocarburizing based on the active screen technology was applied in an industrial-scale cold wall reactor for the treatment of AISI 316L. Different technological aspects of a cold wall active screen plasma nitrocarburizing (ASPNC) reactor are addressed. The current study compiles recent achievements for the ASPNC treatment using an active screen made of carbon fibre-reinforced carbon under varying plasma conditions. In addition, it is shown that utilizing an active screen made of carbon opens up the possibility to control the structural properties of expanded austenite by the variation of the plasma conditions. It is revealed that for the ASPNC treatment using an active carbon screen, the high reactivity of the generated plasma at the carbon surface suppresses the requirement to apply a bias discharge.
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    Dissolution and precipitation of copper-rich phases during heating and cooling of precipitation-hardening steel X5CrNiCuNb16-4 (17-4 PH)
    (Dordrecht [u.a.] : Springer Science + Business Media B.V, 2020) Rowolt, Christian; Milkereit, Benjamin; Springer, Armin; Kreyenschulte, Carsten; Kessler, Olaf
    Continuous heating transformation (CHT) diagrams and continuous cooling transformation (CCT) diagrams of precipitation-hardening steels have the drawback that important information on the dissolution and precipitation of Cu-rich phases during continuous heating and cooling are missing. This work uses a comparison of different techniques, namely dilatometry and differential scanning calorimetry for the in situ analysis of the so far neglected dissolution and precipitation of Cu-rich phases during continuous heating and cooling to overcome these drawbacks. Compared to dilatometry, DSC is much more sensitive to phase transformation affecting small volume fractions, like precipitation. Thus, the important solvus temperature for the dissolution of Cu-rich phases was revealed from DSC and integrated into the CHT diagram. Moreover, DSC reveals that during continuous cooling from solution treatment, premature Cu-rich phases may form depending on cooling rate. Those quench-induced precipitates were analysed for a broad range of cooling rates and imaged for microstructural analysis using optical microscopy, scanning electron microscopy and transmission electron microscopy. This information substantially improves the CCT diagram.
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    Nitrogen-Doped Carbon Nanotube/Polypropylene Composites with Negative Seebeck Coefficient
    (Basel : MDPI, 2020) Krause, Beate; Konidakis, Ioannis; Arjmand, Mohammad; Sundararaj, Uttandaraman; Fuge, Robert; Liebscher, Marco; Hampel, Silke; Klaus, Maxim; Serpetzoglou, Efthymis; Stratakis, Emmanuel; Pötschke, Petra
    This study describes the application of multi-walled carbon nanotubes that were nitrogen-doped during their synthesis (N-MWCNTs) in melt-mixed polypropylene (PP) composites. Different types of N-MWCNTs, synthesized using different methods, were used and compared. Four of the five MWCNT grades showed negative Seebeck coefficients (S), indicating n-type charge carrier behavior. All prepared composites (with a concentration between 2 and 7.5 wt% N-MWCNTs) also showed negative S values, which in most cases had a higher negative value than the corresponding nanotubes. The S values achieved were between 1.0 µV/K and −13.8 µV/K for the N-MWCNT buckypapers or powders and between −4.7 µV/K and −22.8 µV/K for the corresponding composites. With a higher content of N-MWCNTs, the increase in electrical conductivity led to increasing values of the power factor (PF) despite the unstable behavior of the Seebeck coefficient. The highest power factor was achieved with 4 wt% N-MWCNT, where a suitable combination of high electrical conductivity and acceptable Seebeck coefficient led to a PF value of 6.1 × 10−3 µW/(m·K2). First experiments have shown that transient absorption spectroscopy (TAS) is a useful tool to study the carrier transfer process in CNTs in composites and to correlate it with the Seebeck coefficient.
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    Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible
    (Warrendale, Pa : TMS, 2020) Dadzis, K.; Menzel, R.; Juda, U.; Irmscher, K.; Kranert, C.; Müller, M.; Ehrl, M.; Weingärtner, R.; Reimann, C.; Abrosimov, N.; Riemann, H.
    The growth of silicon crystals from a melt contained in a granulate crucible significantly differs from the classical growth techniques because of the granulate feedstock and the continuous growth process. We performed a systematic study of impurities and structural defects in several such crystals with diameters up to 60 mm. The possible origin of various defects is discussed and attributed to feedstock (concentration of transition metals), growth setup (carbon concentration), or growth process (dislocation density), showing the potential for further optimization. A distinct correlation between crystal defects and bulk carrier lifetime is observed. A bulk carrier lifetime with values up to 600 μs on passivated surfaces of dislocation-free parts of the crystal is currently achieved.
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    Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence
    (Warrendale, Pa : TMS, 2020) Netzel, C.; Hoffmann, V.; Einfeldt, S.; Weyers, M.
    Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN waveguide influence the injection efficiency of holes into the InGaN quantum wells of these devices. In this study, the non-radiative recombination and the diffusivity in the [000-1] direction for charge carriers in such GaN layers are investigated by the photoluminescence of buried InGaN quantum wells, in addition to the GaN photoluminescence. The vertical charge carrier diffusion length and the diffusion constant in GaN were determined by evaluating the intensity from InGaN quantum wells in different depths below a top GaN layer. Additionally, the intensity from the buried InGaN quantum wells was found to be more sensitive to variations in the non-radiative recombination rate in the GaN layer than the intensity from the GaN itself. The study enables conclusions to be drawn on how the growth of a p-side GaN waveguide layer has to be optimized: (1) The charge carrier diffusivity in the [000-1] direction at device operation temperature is limited by phonon scattering and can be only slightly improved by material quality. (2) The use of TMGa (trimethylgallium) instead of TEGa (triethylgallium) as a precursor for the growth of GaN lowers the background silicon doping level and is advantageous for a large hole diffusion length. (3) Small growth rates below 0.5 μm/h when using TMGa or below 0.12 μm/h when using TEGa enhance non-radiative recombination. (4) A V/III gas ratio of 2200 or more is needed for low non-radiative recombination rates in GaN.