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- Item240-GHz Reflectometer-Based Dielectric Sensor With Integrated Transducers in a 130-nm SiGe BiCMOS Technology(New York, NY : IEEE, 2021) Wang, Defu; Eissa, Mohamed Hussein; Schmalz, Klaus; Kampfe, Thomas; Kissinger, DietmarThis article presents a reflectometer-based on-chip dielectric sensor with integrated transducers at 240 GHz. The chip simplifies the measurement of a vector network analyzer (VNA) to sense the incident and reflected waves by using two heterodyne mixer-based receivers with a dielectric sensing element. Radio frequency (RF) and local oscillator (LO) submillimeter waves are generated by two frequency multiplier chains, respectively. Two back-to-back identical differential side-coupled directive couplers are proposed to separate the incident and reflected signals and couple them to mixers. Both transmission line and coplanar stripline transducers are proposed and integrated with reflectometer to investigate the sensitivity of dielectric sensors. The latter leads to a larger power variation of the reflectometer by providing more sufficient operating bands for the magnitude and phase slope of S11 . The readout of the transducers upon exposure to liquids is performed by the measurement of their reflected signals using two external excitation sources. The experimental dielectric sensing is demonstrated by using binary methanol–ethanol mixture placed on the proposed on-chip dielectric sensor in the assembled printed circuit board. It enables a maximum 8 dB of the power difference between the incident and reflected channels on the measurement of liquid solvents. Both chips occupy an area of 4.03 mm 2 and consume 560 mW. Along with a wide operational frequency range from 200 to 240 GHz, this simplified one-port-VNA-based on-chip device makes it feasible for the use of handle product and suitable for the submillimeter-wave dielectric spectroscopy applications.
- ItemMillimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies(New York, NY : IEEE, 2021) Kissinger, Dietmar; Kahmen, Gerhard; Weigel, RobertThis invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.
- ItemDual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz(New York, NY : IEEE, 2021) Schmalz, Klaus; Rothbart, Nick; Gluck, Alexandra; Eissa, Mohamed Hussein; Mausolf, Thomas; Turkmen, Esref; Yilmaz, Selahattin Berk; Hubers, Heinz-WilhelmThis paper presents a transmitter (TX) and a receiver (RX) with bowtie-antenna and silicon lens for gas spectroscopy at 222-270 GHz, which are fabricated in IHP's 0.13 μm SiGe BiCMOS technology. The TX and RX use two integrated local oscillators for 222 - 256 GHz and 250 - 270 GHz, which are switched for dual-band operation. Due to its directivity of about 27 dBi, the single integrated bowtie-antenna with silicon lens enables an EIRP of about 25 dBm for the TX, and therefore a considerably higher EIRP for the 2-band TX compared to previously reported systems. The double sideband noise temperature of the RX is 20,000 K (18.5 dB noise figure) as measured by the Y-factor method. Absorption spectroscopy of gaseous methanol is used as a measure for the performance of the gas spectroscopy system with TX- and RX-modules.
- ItemA TOPSIS-Assisted Feature Selection Scheme and SOM-Based Anomaly Detection for Milling Tools Under Different Operating Conditions(New York, NY : IEEE, 2021) Assafo, Maryam; Langendorfer, PeterAnomaly detection modeled as a one-class classification is an essential task for tool condition monitoring (TCM) when only the normal data are available. To confront with the real-world settings, it is crucial to take the different operating conditions, e.g., rotation speed, into account when approaching TCM solutions. This work mainly addresses issues related to multi-operating-condition TCM models, namely the varying discriminability of sensory features with different operating conditions; the overlap between normal and anomalous data; and the complex structure of input data. A feature selection scheme is proposed in which the Technique for Order Preference by Similarity to Ideal Solution (TOPSIS) is presented as a tool to aid the multi-objective selection of sensory features. In addition, four anomaly detection approaches based on Self-Organizing Map (SOM) are studied. To examine the stability of the four approaches, they are applied on different single-operating-condition models. Further, to examine their robustness when dealing with complex data structures, they are applied on multi-operating-condition models. The experimental results using the NASA Milling Data Set showed that all the studied anomaly detection approaches achieved a higher assessment accuracy with our feature selection scheme as compared to the Principal Component Analysis (PCA), Laplacian Score (LS), and extended LS in which we added a final step to the original LS method in order to eliminate redundant features.