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- ItemRedetermination of EuScO3(Chester : International Union of Crystallography, 2009) Kahlenberg, V.; Maier, D.; Veličkov, B.Single crystals of europium(III) scandate(III), with ideal formula EuScO3, were grown from the melt using the micro-pulling-down method. The title compound crystallizes in an ortho-rhom-bic distorted perovskite-type structure, where Eu occupies the eightfold coordinated A sites (site symmetry m) and Sc resides on the centres of corner-sharing [ScO6] octa-hedra (B sites with site symmetry ). The structure of EuScO3 has been reported previously based on powder diffraction data [Liferovich & Mitchell (2004). J. Solid State Chem. 177, 2188-2197]. The results of the current redetermination based on single-crystal diffraction data shows an improvement in the precision of the structral and geometric parameters and reveals a defect-type structure. Site-occupancy refinements indicate an Eu deficiency on the A site coupled with O defects on one of the two O-atom positions. The crystallochemical formula of the investigated sample may thus be written as A(0.032Eu0.968)BScO2.952.
- ItemSingle-crystal neutron and X-ray diffraction study of garnet-type solid-state electrolyte Li6La3ZrTaO12: An in situ temperature-dependence investigation (2.5 ≤ T ≤ 873 K)(Oxford [u.a.] : Wiley-Blackwell, 2021) Redhammer, Günther J.; Meven, Martin; Ganschow, Steffen; Tippelt, Gerold; Rettenwander, DanielLarge single crystals of garnet-type Li6La3ZrTaO12 (LLZTO) were grown by the Czochralski method and analysed using neutron diffraction between 2.5 and 873 K in order to fully characterize the Li atom distribution, and possible Li ion mobility in this class of potential candidates for solid-state electrolyte battery material. LLZTO retains its cubic symmetry (space group Ia 3 d) over the complete temperature range. When compared to other sites, the octahedral sites behave as the most rigid unit and show the smallest increase in atomic displacement parameters and bond length. The La and Li sites show similar thermal expansion in their bond lengths with temperature, and the anisotropic and equivalent atomic displacement parameters exhibit a distinctly larger increase at temperatures above 400 K. Detailed inspection of nuclear densities at the Li1 site reveal a small but significant displacement from the 24d position to the typical 96h position, which cannot, however, be resolved from the single-crystal X-ray diffraction data. The site occupation of LiI ions on Li1 and Li2 sites remains constant, so there is no change in site occupation with temperature. © 2021 International Union of Crystallography. All rights reserved.
- ItemRedetermination of terbium scandate, revealing a defect-type perovskite derivative(Chester : International Union of Crystallography, 2008) Veličkov, B.; Kahlenberg, V.; Bertram, R.; Uecker, R.The crystal structure of terbium(III) scandate(III), with ideal formula TbScO3, has been reported previously on the basis of powder diffraction data [Liferovich & Mitchell (2004). J. Solid State Chem. 177, 2188-2197]. The current data were obtained from single crystals grown by the Czochralski method and show an improvement in the precision of the geometric parameters. Moreover, inductively coupled plasma optical emission spectrometry studies resulted in a nonstoichiometric composition of the title compound. Site-occupancy refinements based on diffraction data support the idea of a Tb deficiency on the A site (inducing O defects on the O2 position). The crystallochemical formula of the investigated sample thus may be written as A(0.04Tb0.96) BScO2.94. In the title compound, Tb occupies the eightfold- coordinated sites (site symmetry m) and Sc the centres of corner-sharing [ScO6] octa-hedra (site symmetry ). The mean bond lengths and site distortions fit well into the data of the remaining lanthanoid scandates in the series from DyScO3 to NdScO3. A linear structural evolution with the size of the lanthanoid from DyScO3 to NdScO3 can be predicted.
- ItemUltra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals(Melville, NY : AIP Publ., 2019) Galazka, Zbigniew; Ganschow, Steffen; Schewski, Robert; Irmscher, Klaus; Klimm, Detlef; Kwasniewski, Albert; Pietsch, Mike; Fiedler, Andreas; Schulze-Jonack, Isabelle; Albrecht, Martin; Schröder, Thomas; Bickermann, MatthiasTruly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 °C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 Ωcm, 3 × 1018–9 × 1019 cm−3, and 107 cm2 V−1 s−1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 °C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coefficient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 Å, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel films.
- ItemCzochralski growth of mixed cubic sesquioxide crystals in the ternary system Lu2O3-Sc2O3-Y2O3(Oxford [u.a.] : Wiley-Blackwell, 2021) Kränkel, Christian; Uvarova, Anastasia; Haurat, Émile; Hülshoff, Lena; Brützam, Mario; Guguschev, Christo; Kalusniaka, Sascha; Klimm, DetlefCubic rare-earth sesquioxide crystals are strongly demanded host materials for high power lasers, but due to their high melting points investigations on their thermodynamics and the growth of large-size crystals of high optical quality remain a challenge. Detailed thermal investigations of the ternary system Lu2O3-Sc2O3-Y2O3 revealing a large range of compositions with melting temperatures below 2200°C and a minimum of 2053°C for the composition (Sc0.45Y0.55)2O3 are presented. These reduced temperatures enable for the first time the growth of high optical quality mixed sesquioxide crystals with disordered structure by the conventional Czochralski method from iridium crucibles. An (Er0.07Sc0.50Y0.43)2O3 crystal is successfully grown and characterized with respect to its crystallographic properties as well as its composition, thermal conductivity and optical absorption in the 1μm range. © 2021 International Union of Crystallography. All rights reserved.
- ItemAnalysis of catalyst surface wetting: The early stage of epitaxial germanium nanowire growth(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2020) Ernst, Owen C.; Lange, Felix; Uebel, David; Teubner, Thomas; Boeck, TorstenThe dewetting process is crucial for several applications in nanotechnology. Even though not all dewetting phenomena are fully understood yet, especially regarding metallic fluids, it is clear that the formation of nanometre-sized particles, droplets, and clusters as well as their movement are strongly linked to their wetting behaviour. For this reason, the thermodynamic stability of thin metal layers (0.1-100 nm) with respect to their free energy is examined here. The decisive factor for the theoretical considerations is the interfacial energy. In order to achieve a better understanding of the interfacial interactions, three different models for estimating the interfacial energy are presented here: (i) fully theoretical, (ii) empirical, and (iii) semi-empirical models. The formation of nanometre-sized gold particles on silicon and silicon oxide substrates is investigated in detail. In addition, the strengths and weaknesses of the three models are elucidated, the different substrates used are compared, and the possibility to further process the obtained particles as nanocatalysts is verified. The importance of a persistent thin communication wetting layer between the particles and its effects on particle size and number is also clarified here. In particular, the intrinsic reduction of the Laplace pressure of the system due to material re-evaporation and Ostwald ripening describes the theoretically predicted and experimentally obtained results. Thus, dewetting phenomena of thin metal layers can be used to manufacture nanostructured devices. From this point of view, the application of gold droplets as catalysts to grow germanium nanowires on different substrates is described. © 2020 Ernst et al.
- ItemRevealing all states of dewetting of a thin gold layer on a silicon surface by nanosecond laser conditioning(Amsterdam : Elsevier, 2021) Ernst, Owen C.; Uebel, David; Kayser, Stefan; Lange, Felix; Teubner, Thomas; Boeck, TorstenDewetting is a ubiquitous phenomenon which can be applied to the laser synthesis of nanoparticles. A classical spinodal dewetting process takes place in four successive states, which differ from each other in their morphology. In this study all states are revealed by interaction of pulsed nanosecond UV laser light with thin gold layers with thicknesses between 1 nm and 10 nm on (100) silicon wafers. The specific morphologies of the dewetting states are discussed with particular emphasis on the state boundaries. The main parameter determining which state is formed is not the duration for which the gold remains liquid, but rather the input energy provided by the laser. This shows that each state transition has a separate measurable activation energy. The temperature during the nanosecond pulses and the duration during which the gold remains liquid was determined by simulation using the COMSOL Multiphysics® software package. Using these calculations, an accurate local temperature profile and its development over time was simulated. An analytical study of the morphologies and formed structures was performed using Minkowski measures. With aid of this tool, the laser induced structures were compared with thermally annealed samples, with perfectly ordered structures and with perfectly random structures. The results show that both, structures of the laser induced and the annealed samples, strongly resemble the perfectly ordered structures. This reveals a close relationship between these structures and suggests that the phenomenon under investigation is indeed a spinodal dewetting generated by an internal material wave function. The purposeful generation of these structures and the elucidation of the underlying mechanism of dewetting by short pulse lasers may assist the realisation of various technical elements such as nanowires in science and industry. © 2020
- ItemFemtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2018) Ringleb, Franziska; Andree, Stefan; Heidmann, Berit; Bonse, Jörn; Eylers, Katharina; Ernst, Owen; Boeck, Torsten; Schmid, Martina; Krüger, JörgMicro-concentrator solar cells offer an attractive way to further enhance the efficiency of planar-cell technologies while saving absorber material. Here, two laser-based bottom-up processes for the fabrication of regular arrays of CuInSe2 and Cu(In,Ga)Se2 microabsorber islands are presented, namely one approach based on nucleation and one based on laser-induced forward transfer. Additionally, a procedure for processing these microabsorbers to functioning micro solar cells connected in parallel is demonstrated. The resulting cells show up to 2.9% efficiency and a significant efficiency enhancement under concentrated illumination.
- ItemThe Electronic Conductivity of Single Crystalline Ga-Stabilized Cubic Li7La3Zr2O12: A Technologically Relevant Parameter for All-Solid-State Batteries(Weinheim : Wiley-VCH, 2020) Philipp, Martin; Gadermaier, Bernhard; Posch, Patrick; Hanzu, Ilie; Ganschow, Steffen; Meven, Martin; Rettenwander, Daniel; Redhammer, Günther J.; Wilkening, H. Martin R.The next-generation of all-solid-state lithium batteries need ceramic electrolytes with very high ionic conductivities. At the same time a negligible electronic conductivity σeon is required to eliminate self-discharge in such systems. A non-negligible electronic conductivity may also promote the unintentional formation of Li dendrites, being currently one of the key issues hindering the development of long-lasting all-solid-state batteries. This interplay is suggested recently for garnet-type Li7La3Zr2O12 (LLZO). It is, however, well known that the overall macroscopic electronic conductivity may be governed by a range of extrinsic factors such as impurities, chemical inhomogeneities, grain boundaries, morphology, and size effects. Here, advantage of Czochralski-grown single crystals, which offer the unique opportunity to evaluate intrinsic properties of a chemically homogeneous matrix, is taken to measure the electronic conductivity σeon. Via long-time, high-precision potentiostatic polarization experiments an upper limit of σeon in the order of 5 × 10−10 S cm−1 (293 K) is estimated. This value is by six orders of magnitude lower than the corresponding total conductivity σtotal = 10−3 S cm−1 of Ga-LLZO. Thus, it is concluded that the high values of σeon recently reported for similar systems do not necessarily mirror intragrain bulk properties of chemically homogenous systems but may originate from chemically inhomogeneous interfacial areas. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemGrowth of crystalline phase change materials by physical deposition methods(Abingdon : Taylor & Francis Group, 2017) Boschker, Jos E.; Calarco, RaffaellaPhase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offered by epitaxial films, are needed in order to study the fundamental properties of phase change materials and to improve our understanding of this materials class. Here, we review the progress made in the growth of crystalline phase change materials by physical methods, such as molecular beam epitaxy, sputtering, and pulsed laser deposition. First, we discuss the difference and similarities between these physical deposition methods and the crystal structures of Ge2Sb2Te5, the prototype phase change material. Next, we focus on the growth of epitiaxial GST films on (0 0 1)- and (1 1 1)-oriented substrates, leading to the conclusion that (1 1 1)-oriented substrates are preferred for the growth of phase change materials. Finally, the growth of GeTe/Sb2Te3 superlattices on amorphous and single crystalline substrates is discussed.