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Flexible MXene films for batteries and beyond

2022, Huang, Yang, Lu, Qiongqiong, Wu, Dianlun, Jiang, Yue, Liu, Zhenjie, Chen, Bin, Zhu, Minshen, Schmidt, Oliver G.

MXenes add dozens of metallic conductors to the family of two-dimensional (2D) materials. A top-down synthesis approach removing A-layer atoms (e.g., Al, Si, and Ga) in MAX phases to produce 2D flakes attaches various surface terminations to MXenes. With these terminations, MXenes show tunable properties, promising a range of applications from energy storage devices to electronics, including sensors, transistors, and antennas. MXenes are also excellent building blocks to create flexible films used for flexible and wearable devices. This article summarizes the synthesis of MXene flakes and highlights aspects that need attention for flexible devices. Rather than listing the development of energy storage devices in detail, we focus on the main challenges of and solutions for constructing high-performance devices. Moreover, we show the applications of MXene films in electronics to call on designs to construct a complete system based on MXene with good flexibility, which consists of a power source, sensors, transistors, and wireless communications.

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Perovskite phase heterojunction solar cells

2022, Ji, Ran, Zhang, Zongbao, Hofstetter, Yvonne J., Buschbeck, Robin, Hänisch, Christian, Paulus, Fabian, Vaynzof, Yana

Modern photovoltaic devices are often based on a heterojunction structure where two components with different optoelectronic properties are interfaced. The properties of each side of the junction can be tuned by either utilizing different materials (for example, donor/acceptor) or doping (for example, p–n junction) or even varying their dimensionality (for example, 3D/2D). Here we demonstrate the concept of phase heterojunction (PHJ) solar cells by utilizing two polymorphs of the same material. We demonstrate the approach by forming γ-CsPbI3/β-CsPbI3 perovskite PHJ solar cells. We find that all of the photovoltaic parameters of the PHJ device significantly surpass those of each of the single-phase devices, resulting in a maximum power conversion efficiency of 20.1%. These improvements originate from the efficient passivation of the β-CsPbI3 by the larger bandgap γ-CsPbI3, the increase in the built-in potential of the PHJ devices enabled by the energetic alignment between the two phases and the enhanced absorption of light by the PHJ structure. The approach demonstrated here offers new possibilities for the development of photovoltaic devices based on polymorphic materials.