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- ItemWafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices(New York, NY : Inst., 2021) Knehr, Emanuel; Ziegler, Mario; Linzen, Sven; Ilin, Konstantin; Schanz, Patrick; Plentz, Jonathan; Diegel, Marco; Schmidt, Heidemarie; Il’iche, Evgeni; Siegel, MichaelSuperconducting niobium nitride thin films are used for a variety of photon detectors, quantum devices, and superconducting electronics. Most of these applications require highly uniform films, for instance, when moving from single-pixel detectors to arrays with a large active area. Plasma-enhanced atomic layer deposition (ALD) of superconducting niobium nitride is a feasible option to produce high-quality, conformal thin films and has been demonstrated as a film deposition method to fabricate superconducting nanowire single-photon detectors before. Here, we explore the property spread of ALD-NbN across a 6-in. wafer area. Over the equivalent area of a 2-in. wafer, we measure a maximum deviation of 1% in critical temperature and 12% in switching current. Toward larger areas, structural characterizations indicate that changes in the crystal structure seem to be the limiting factor rather than film composition or impurities. The results show that ALD is suited to fabricate NbN thin films as a material for large-area detector arrays and for new detector designs and devices requiring uniform superconducting thin films with precise thickness control.
- ItemThermally induced evolution of the structure and optical properties of silicon nanowires(Amsterdam [u.a.] : Elsevier, 2020) Mussabek, Gauhar; Lysenko, Vladimir; Yermukhamed, Dana; Sivakov, Vladimir; Yu. Timoshenko, VictorIn the present paper, we report on the investigation of thermal annealing (TA) effect on structural and optical properties of crystalline silicon nanowires produced by metal-assisted chemical etching approach. In particular, the impact of TA on nanowire length, relative volume and size distribution of voids is described in terms of Lifshitz-Slyozov-Wagner theory considering the TA induced Oswald ripening in the SiNW arrays. It was also found that TA leads to a decrease of the SiNWs total reflection in the wide UV–VIS-IR spectral range. The reported effects can be used for tuning of crystalline SiNWs arrays in view of their further applications in photonics related fields. © 2020 The Authors
- ItemSelf-organized formation of unidirectional and quasi-one-dimensional metallic Tb silicide nanowires on Si(110)(Amsterdam [u.a.] : Elsevier, 2022) Appelfeller, Stephan; Franz, Martin; Karadag, Murat; Kubicki, Milan; Zielinski, Robert; Krivenkov, Maxim; Varykhalov, Andrei; Preobrajenski, Alexei; Dähne, MarioTerbium induced nanostructures on Si(110) and their growth are thoroughly characterized by low energy electron diffraction, scanning tunneling microscopy and spectroscopy, core-level and valence band photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. For low Tb coverage, a wetting layer forms with its surface fraction continuously decreasing with increasing Tb coverage in favor of the formation of unidirectional Tb silicide nanowires. These nanowires show high aspect ratios for high annealing temperatures or on substrates already containing Tb in the bulk. Both wetting layer and nanowires are stable for temperatures up to 750°C. In contrast to the nanowires, the wetting layer is characterized by a band gap. Thus, the metallic nanowires, which show a quasi-one-dimensional electronic band structure, are embedded in a semiconducting surrounding of wetting layer and substrate, insulating the nanowires from each other.
- ItemCoupled mechanical oscillator enables precise detection of nanowire flexural vibrations(London : Springer Nature, 2023) Sharma, Maneesha; Sathyadharma Prasad, Aniruddha; Freitag, Norbert H.; Büchner, Bernd; Mühl, ThomasThe field of nanowire (NW) technology represents an exciting and steadily growing research area with applications in ultra-sensitive mass and force sensing. Existing detection methods for NW deflection and oscillation include optical and field emission approaches. However, they are challenging for detecting small diameter NWs because of the heating produced by the laser beam and the impact of the high electric field. Alternatively, the deflection of a NW can be detected indirectly by co-resonantly coupling the NW to a cantilever and measuring it using a scanning probe microscope. Here, we prove experimentally that co-resonantly coupled devices are sensitive to small force derivatives similar to standalone NWs. We detect force derivatives as small as 10−9 N/m with a bandwidth of 1 Hz at room temperature. Furthermore, the measured hybrid vibration modes show clear signatures of avoided crossing. The detection technique presented in this work verifies a major step in boosting NW-based force and mass sensing.
- ItemSimultaneous magnetic field and field gradient mapping of hexagonal MnNiGa by quantitative magnetic force microscopy(London : Springer Nature, 2023) Freitag, Norbert H.; Reiche, Christopher F.; Neu, Volker; Devi, Parul; Burkhardt, Ulrich; Felser, Claudia; Wolf, Daniel; Lubk, Axel; Büchner, Bernd; Mühl, ThomasMagnetic force microscopy (MFM) is a scanning microscopy technique that is commonly employed to probe the sample’s magnetostatic stray fields via their interaction with a magnetic probe tip. In this work, a quantitative, single-pass MFM technique is presented that maps one magnetic stray-field component and its spatial derivative at the same time. This technique uses a special cantilever design and a special high-aspect-ratio magnetic interaction tip that approximates a monopole-like moment. Experimental details, such as the control scheme, the sensor design, which enables simultaneous force and force gradient measurements, as well as the potential and limits of the monopole description of the tip moment are thoroughly discussed. To demonstrate the merit of this technique for studying complex magnetic samples it is applied to the examination of polycrystalline MnNiGa bulk samples. In these experiments, the focus lies on mapping and analyzing the stray-field distribution of individual bubble-like magnetization patterns in a centrosymmetric [001] MnNiGa phase. The experimental data is compared to calculated and simulated stray-field distributions of 3D magnetization textures, and, furthermore, bubble dimensions including diameters are evaluated. The results indicate that the magnetic bubbles have a significant spatial extent in depth and a buried bubble top base.
- ItemInfluence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs(Basel : MDPI, 2021) Reszka, Anna; Korona, Krzysztof P.; Tiagulskyi, Stanislav; Turski, Henryk; Jahn, Uwe; Kret, Slawomir; Bożek, Rafał; Sobanska, Marta; Zytkiewicz, Zbigniew R.; Kowalski, Bogdan J.For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures.