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- ItemRejuvenation through plastic deformation of a La-based metallic glass measured by fast-scanning calorimetry(Amsterdam : Elsevier B.V., 2020) Meylan, C.M.; Orava, J.; Greer, A.L.We explore the glassy states achievable after a metallic glass is formed on liquid quenching. Samples of La55Al25Ni20 (at.%) metallic glass (rod and ribbon) are studied. The extent of structural relaxation at room temperature is characterized for this low-glass-transition temperature glass. Plastic deformation (uniaxial compression) rejuvenates the glass to states of higher enthalpy characteristic of glass formation at high cooling rate. Deformation increases the heterogeneity of the glass, widening the spectrum of relaxation times. The extent of rejuvenation in samples of low aspect ratio is compared with that under conditions of high constraint in notched samples. The deformation-induced rejuvenation is particularly susceptible to reduction on subsequent ageing. Fast-scanning calorimetry is useful in characterizing the dynamics of structural relaxation. The shadow glass transition is more evident on fast heating, and is observed in this glass for the first time. A new excess exothermic effect is observed before the glass transition.
- ItemLateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication(Pennington, NJ : ECS, 2023) Anand, K.; Schubert, M.A.; Corley-Wiciak, A.A.; Spirito, D.; Corley-Wiciak, C.; Klesse, W.M.; Mai, A.; Tillack, B.; Yamamoto, Y.Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [−110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping.