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- ItemLow-rank tensor reconstruction of concentrated densities with application to Bayesian inversion(Dordrecht [u.a.] : Springer Science + Business Media B.V, 2022) Eigel, Martin; Gruhlke, Robert; Marschall, ManuelThis paper presents a novel method for the accurate functional approximation of possibly highly concentrated probability densities. It is based on the combination of several modern techniques such as transport maps and low-rank approximations via a nonintrusive tensor train reconstruction. The central idea is to carry out computations for statistical quantities of interest such as moments based on a convenient representation of a reference density for which accurate numerical methods can be employed. Since the transport from target to reference can usually not be determined exactly, one has to cope with a perturbed reference density due to a numerically approximated transport map. By the introduction of a layered approximation and appropriate coordinate transformations, the problem is split into a set of independent approximations in seperately chosen orthonormal basis functions, combining the notions h- and p-refinement (i.e. “mesh size” and polynomial degree). An efficient low-rank representation of the perturbed reference density is achieved via the Variational Monte Carlo method. This nonintrusive regression technique reconstructs the map in the tensor train format. An a priori convergence analysis with respect to the error terms introduced by the different (deterministic and statistical) approximations in the Hellinger distance and the Kullback–Leibler divergence is derived. Important applications are presented and in particular the context of Bayesian inverse problems is illuminated which is a main motivation for the developed approach. Several numerical examples illustrate the efficacy with densities of different complexity and degrees of perturbation of the transport to the reference density. The (superior) convergence is demonstrated in comparison to Monte Carlo and Markov Chain Monte Carlo methods.
- ItemCalculation of the steady states in dynamic semiconductor laser models(Dordrecht [u.a.] : Springer Science + Business Media B.V, 2022) Radziunas, MindaugasWe discuss numerical challenges in calculating stable and unstable steady states of widely used dynamic semiconductor laser models. Knowledge of these states is valuable when analyzing laser dynamics and different properties of the lasing states. The example simulations and analysis mainly rely on 1(time)+1(space)-dimensional traveling-wave models, where the steady state defining conditions are formulated as a system of nonlinear algebraic equations. The performed steady state calculations reveal limitations of the Lang-Kobayashi model, explain nontrivial bias threshold relations in lasers with several electrical contacts, or predict and explain transient dynamics when simulating such lasers.
- ItemNumerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapes(Dordrecht [u.a.] : Springer Science + Business Media B.V, 2020) Maltsi, Anieza; Niermann, Tore; Streckenbach, Timo; Tabelow, Karsten; Koprucki, ThomasWe present a mathematical model and a tool chain for the numerical simulation of TEM images of semiconductor quantum dots (QDs). This includes elasticity theory to obtain the strain profile coupled with the Darwin–Howie–Whelan equations, describing the propagation of the electron wave through the sample. We perform a simulation study on indium gallium arsenide QDs with different shapes and compare the resulting TEM images to experimental ones. This tool chain can be applied to generate a database of simulated TEM images, which is a key element of a novel concept for model-based geometry reconstruction of semiconductor QDs, involving machine learning techniques.
- ItemCorrection to: Numerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapes(Dordrecht [u.a.] : Springer Science + Business Media B.V, 2021) Maltsi, Anieza; Niermann, Tore; Streckenbach, Timo; Tabelow, Karsten; Koprucki, ThomasCorrection to: Optical and Quantum Electronics (2020) 52:257 https://doi.org/10.1007/s11082-020-02356-y
- ItemDetecting striations via the lateral photovoltage scanning method without screening effect(Dordrecht [u.a.] : Springer Science + Business Media B.V, 2021) Kayser, S.; Farrell, P.; Rotundo, N.The lateral photovoltage scanning method (LPS) detects doping inhomogeneities in semiconductors such as Si, Ge and SixGe1−x in a cheap, fast and nondestructive manner. LPS relies on the bulk photovoltaic effect and thus can detect any physical quantity affecting the band profiles of the sample. LPS finite volume simulation using commercial software suffer from long simulation times and convergence instabilities. We present here an open-source finite volume simulation for a 2D Si sample using the ddfermi simulator. For low injection conditions we show that the LPS voltage is proportional to the doping gradient. For higher injection conditions, we directly show how the LPS voltage and the doping gradient differ and link the physical effect of lower local resolution to the screening effect. Previously, the loss of local resolution was assumed to be only connected to the enlargement of the excess charge carrier distribution.
- ItemSimulation and analysis of high-brightness tapered ridge-waveguide lasers(Dordrecht [u.a.] : Springer Science + Business Media B.V, 2023) Koester, Jan-Philipp; Wenzel, Hans; Wilkens, Martin; Knigge, AndreaIn this work, a simulation-based analysis of a CW-driven tapered ridge-waveguide laser design is presented. Measurements of these devices delivered high lateral brightness values of 4 W · mm - 1mrad - 1 at 2.5W optical output power. First, active laser simulations are performed to reproduce these results. Next, the resulting complex valued intra-cavity refractive index distributions are the basis for a modal and beam propagation analysis, which demonstrates the working principle and limitation of the underlying lateral mode filter effect. Finally, the gained understanding is the foundation for further design improvements leading to lateral brightness values of up to 10 W · mm - 1mrad - 1 predicted by simulations.