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- ItemMode competition in broad-ridge-waveguide lasers(Bristol : IOP Publ., 2020) Koester, J.-P.; Putz, A.; Wenzel, H.; Wünsche, H.-J.; Radziunas, M.; Stephan, H.; Wilkens, M.; Zeghuzi, A.; Knigge, A.The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad waveguides is commonly regarded to be limited by the onset of higher-order lateral modes. For the study of the lateral-mode competition two complementary simulation tools are applied, representing different classes of approximations. The first tool bases on a completely incoherent superposition of mode intensities and disregards longitudinal effects like spatial hole burning, whereas the second tool relies on a simplified carrier transport and current flow. Both tools yield agreeing power-current characteristics that fit the data measured for 5-23 µm wide ridges. Also, a similarly good qualitative conformance of the near and far fields is found. However, the threshold of individual modes, the partition of power between them at a given current, and details of the near and far fields show differences. These differences are the consequence of a high sensitivity of the mode competition to details of the models and of the device structure. Nevertheless, it can be concluded concordantly that the brightness rises with increasing ridge width irrespective of the onset of more and more lateral modes. The lateral brightness W mm-1at 10 MW cm-2 power density on the front facet of the investigated laser with widest ridge (23 µm) is comparable with best values known from much wider broad-area lasers. In addition, we show that one of the simulation tools is able to predict beam steering and coherent beam coupling without introducing any phenomenological coupling coefficient or asymmetries. © 2020 The Author(s). Published by IOP Publishing Ltd.
- ItemHighly linear fundamental up-converter in InP DHBT technology for W-band applications(New York, NY [u.a.] : Wiley, 2020) Hossain, Maruf; Stoppel, Dimitri; Boppel, Sebastian; Heinrich, Wolfgang; Krozer, ViktorA fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 ± 1 dB within the frequency from 82 to 95 GHz with a saturated output power of -1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW. © 2020 The Authors. Microwave and Optical Technology Letters published by Wiley Periodicals, Inc.
- ItemRefractory metal-based ohmic contacts on β-Ga2O3 using TiW(Melville, NY : AIP Publ., 2022) Tetzner, Kornelius; Schewski, Robert; Popp, Andreas; Anooz, Saud Bin; Chou, Ta-Shun; Ostermay, Ina; Kirmse, Holm; Würfl, JoachimThe present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic contact properties were analyzed by transfer length measurements of TiW contacts annealed at temperatures between 400 and 900 °C. Optimum contact properties with a contact resistance down to 1.5 × 10-5 ω cm2 were achieved after annealing at 700 °C in nitrogen on highly doped β-Ga2O3. However, a significant contact resistance increase was observed at annealing temperatures above 700 °C. Cross-sectional analyses of the contacts using scanning transmission electron microscopy revealed the formation of a TiOx interfacial layer of 3-5 nm between TiW and β-Ga2O3. This interlayer features an amorphous structure and most probably possesses a high amount of vacancies and/or Ga impurities supporting charge carrier injection. Upon annealing at temperatures of 900 °C, the interlayer increases in thickness up to 15 nm, featuring crystalline-like properties, suggesting the formation of rutile TiO2. Although severe morphological changes at higher annealing temperatures were also verified by atomic force microscopy, the root cause for the contact resistance increase is attributed to the structural changes in thickness and crystallinity of the interfacial layer.
- ItemOptimizing Vertical and Lateral Waveguides of kW-Class Laser Bars for Higher Peak Power, Efficiency and Lateral Beam Quality(New York, NY : IEEE, 2022) Miah, M. Jarez; Boni, Anisuzzaman; Arslan, Seval; Martin, Dominik; Casa, Pietro Della; Crump, PaulGaAs-based, highly-efficient, kW-class, 1-cm laser bars with high peak power P opt and improved beam quality in quasi-continuous-wave mode are presented. The use of an extreme-triple-asymmetric (ETAS) epitaxial layer structure diminishes power saturation of high-power bars at high driving current. The resulting ETAS bars with 4 mm cavity produce a record 1.9 kW peak power, limited by available current supply, with a maximum power conversion efficiency η E = 67% at T HS = 25 °C heat-sink temperature. Both P opt and η E have been increased further by operating the bars at T HS = −70 °C. Sub-zero operation raises the P opt to 2.3 kW and the maximum η E to 74%. A second configuration of ETAS bars with optimized lateral layout is further realized to obtain narrow lateral beam divergence θ up to 2 kA driving current, without sacrificing P opt and η E . A 2–3° lower θ (95% power level) is observed over a wide operating range at room temperature. A high degree of polarization is also maintained across the whole operatingrange.
- Item60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers(New York, NY : IEEE, 2022) Crump, Paul; Miah, M. Jarez; Wilkens, Martin; Fricke, Jorg; Wenzel, Hans; Knigge, AndreaProgress in epitaxial design is shown to enable increased optical output power P opt and power conversion efficiency η E and decreased lateral far-field divergence angle in GaAs-based distributed Bragg reflector (DBR) broad-area (BA) diode lasers. We show that the wavelength-locked power can be significantly increased (saturation at high bias current is mitigated) by migrating from an asymmetric large optical cavity (ASLOC) based laser structure to a highly asymmetric (extreme-triple-asymmetric (ETAS)) layer design. For wavelength-stabilization, 7 th order, monolithic DBRs are etched on the surface of fully grown epitaxial layer structures. The investigated ETAS reference Fabry-Pérot (FP) BA lasers without DBRs and with 200 µm stripe width and 4 mm cavity length provide P opt = 29 W (still increasing) at 30 A in continuous-wave mode at room temperature, in contrast to the maximum P opt = 24 W (limited by strong power saturation) of baseline ASLOC lasers. The reference ETAS FP lasers also deliver over 10% higher η E at P opt = 24 W. On the other hand, in comparison to the wavelength-stabilized ASLOC DBR lasers, ETAS DBR lasers show a peak power increment from 14 W to 22 W, and an efficiency increment from 46% to 60% at P opt = 14 W. A narrow spectral width (< 1 nm at 95% power content) is maintained across a very wide operating range. Consistent with earlier studies, a narrower far-field divergence angle and consequently an improved beam-parameter product is also observed, compared to the ASLOC-based lasers.
- ItemThe patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2021) Deinhart, Victor; Kern, Lisa-Marie; Kirchhof, Jan N.; Juergensen, Sabrina; Sturm, Joris; Krauss, Enno; Feichtner, Thorsten; Kovalchuk, Sviatoslav; Schneider, Michael; Engel, Dieter; Pfau, Bastian; Hecht, Bert; Bolotin, Kirill I.; Reich, Stephanie; Höflich, KatjaFocused beams of helium ions are a powerful tool for high-fidelity machining with spatial precision below 5 nm. Achieving such a high patterning precision over large areas and for different materials in a reproducible manner, however, is not trivial. Here, we introduce the Python toolbox FIB-o-mat for automated pattern creation and optimization, providing full flexibility to accomplish demanding patterning tasks. FIB-o-mat offers high-level pattern creation, enabling high-fidelity large-area patterning and systematic variations in geometry and raster settings. It also offers low-level beam path creation, providing full control over the beam movement and including sophisticated optimization tools. Three applications showcasing the potential of He ion beam nanofabrication for two-dimensional material systems and devices using FIB-o-mat are presented.
- ItemPassive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector(Basel : MDPI, 2020) Čibiraitė-Lukenskienė, Dovilė; Ikamas, Kęstutis; Lisauskas, Tautvydas; Krozer, Viktor; Roskos, Hartmut G.; Lisauskas, AlvydasThis work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. This THz sensor was measured to exhibit a rather flat responsivity over the 0.1–1.5-THz frequency range, with values√ of the optical responsivity and noise-equivalent power of around 40 mA/W and 42 pW/ Hz, respectively. These values are in good agreement with simulations which suggest an even broader flat responsivity range exceeding 2.0 THz. The successful imaging demonstrates the impressive thermal sensitivity which can be achieved with such a sensor. Recording of a 2.3 × 7.5-cm2-sized image of the fingers of a hand with a pixel size of 1 mm2 at a scanning speed of 1 mm/s leads to a signal-to-noise ratio of 2 and a noise-equivalent temperature difference of 4.4 K. This approach shows a new sensing approach with field-effect transistors as THz detectors which are usually used for active THz detection. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
- ItemOn the Conduction Properties of Vertical GaN n-Channel Trench MISFETs([New York, NY] : IEEE, 2021) Treidel, Eldad Bahat; Hilt, Oliver; Hoffmann, Veit; Brunner, Frank; Bickel, Nicole; Thies, Andreas; Tetzner, Kornelius; Gargouri, Hassan; Huber, Christian; Donimirski, Konstanty; Wurfl, JoachimON-state conductance properties of vertical GaN n -channel trench MISFETs manufactured on different GaN substrates and having different gate trench orientations are studied up to 200 °C ambient temperature. The best performing devices, with a maximum output current above 4 kA/cm 2 and an area specific ON-state resistance of 1.1 mΩ·cm 2 , are manufactured on ammonothermal GaN substrate with the gate channel parallel to the a-plane of the GaN crystal. The scalability of the devices up to 40 mm gate periphery is investigated and demonstrated. It is found that, in addition to oxide interface traps, the semiconductor border traps in the p-GaN layer limit the available mobile channel electrons and that the channel surface roughness scattering limits the channel mobility. Both strongly depend on the gate trench orientation and on the GaN substrate defect density.
- ItemVersatile high power pulse-laser source for pico- and nanosecond optical pulses(London : Institute of Physics, 2020) Liero, Armin; Klehr, Andreas; Knigge, Andrea; Heinrich, WolfgangThis paper presents a pulse-laser source for the generation of ps and ns laser pulses with more than 50 W peak output power. The final stages of the drivers use GaN transistors and are capable of switching currents of 0.8 A with 200 ps minimum pulse width and 50 A with 3 ns minimum pulse width. The pulses can be externally triggered by ECL logic. Both single-pulse and pulse train modes are possible.
- ItemWide Field Spectral Imaging with Shifted Excitation Raman Difference Spectroscopy Using the Nod and Shuffle Technique(Basel : MDPI, 2020) Korinth, Florian; Schmälzlin, Elmar; Stiebing, Clara; Urrutia, Tanya; Micheva, Genoveva; Sandin, Christer; Müller, André; Maiwald, Martin; Sumpf, Bernd; Krafft, Christoph; Tränkle, Günther; Roth, Martin M; Popp, JürgenWide field Raman imaging using the integral field spectroscopy approach was used as a fast, one shot imaging method for the simultaneous collection of all spectra composing a Raman image. For the suppression of autofluorescence and background signals such as room light, shifted excitation Raman difference spectroscopy (SERDS) was applied to remove background artifacts in Raman spectra. To reduce acquisition times in wide field SERDS imaging, we adapted the nod and shuffle technique from astrophysics and implemented it into a wide field SERDS imaging setup. In our adapted version, the nod corresponds to the change in excitation wavelength, whereas the shuffle corresponds to the shifting of charges up and down on a Charge-Coupled Device (CCD) chip synchronous to the change in excitation wavelength. We coupled this improved wide field SERDS imaging setup to diode lasers with 784.4/785.5 and 457.7/458.9 nm excitation and applied it to samples such as paracetamol and aspirin tablets, polystyrene and polymethyl methacrylate beads, as well as pork meat using multiple accumulations with acquisition times in the range of 50 to 200 ms. The results tackle two main challenges of SERDS imaging: gradual photobleaching changes the autofluorescence background, and multiple readouts of CCD detector prolong the acquisition time.