6 results
Search Results
Now showing 1 - 6 of 6
- ItemTowards smooth (010) ß-Ga2O3films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio(Bristol : IOP Publ., 2020) Mazzolini, P.; Bierwagen, O.Smooth interfaces and surfaces are beneficial for most (opto)electronic devices that are based on thin films and their heterostructures. For example, smoother interfaces in (010) ß-Ga2O3/(AlxGa1-x)2O3 heterostructures, whose roughness is ruled by that of the ß-Ga2O3 layer, can enable higher mobility 2-dimensional electron gases by reducing interface roughness scattering. To this end we experimentally prove that a substrate offcut along the [001] direction allows to obtain smooth ß-Ga2O3 layers in (010)-homoepitaxy under metal-rich deposition conditions. Applying In-mediated metal-exchange catalysis (MEXCAT) in molecular beam epitaxy at high substrate temperatures (Tg = 900 °C) we compare the morphology of layers grown on (010)-oriented substrates having different unintentional offcuts. The layer roughness is generally ruled by (i) the presence of (110)-and bar 110-facets visible as elongated features along the [001] direction (rms < 0.5 nm), and (ii) the presence of trenches (5-10 nm deep) orthogonal to [001]. We show that an unintentional substrate offcut of only ˜ 0.1° almost oriented along the [001] direction suppresses these trenches resulting in a smooth morphology with a roughness exclusively determined by the facets, i.e. rms ˜ 0.2 nm. Since we found the facet-and-trench morphology in layer grown by MBE with and without MEXCAT, we propose that the general growth mechanism for (010)-homoepitaxy is ruled by island growth whose coalescence results in the formation of the trenches. The presence of a substrate offcut in the [001] direction can allow for step-flow growth or island nucleation at the step edges, which prevents the formation of trenches. Moreover, we give experimental evidence for a decreasing surface diffusion length or increasing nucleation density on the substrate surface with decreasing metal-to-oxygen flux ratio. Based on our experimental results we can rule-out step bunching as cause of the trench formation as well as a surfactant-effect of indium during MEXCAT. © 2020 The Author(s). Published by IOP Publishing Ltd.
- ItemCharge storage in metal-chalcogenide bilayer junctions(Bristol : IOP Publ., 2021) Takagaki, Y.We demonstrate that electrical charges are stored in the bilayer junctions of Al and Bi–Cu–S alloys. The junctions exhibit interfacial resistance switching, which is caused by a spontaneous production of high resistivity compounds at the interface and their electrochemical dissolution under a voltage bias. The charge storage results from the redox reactions that are responsible for the resistance switching. In contrast to conventional secondary batteries, the storing capability increases as the temperature is lowered from room temperature to 77 K, where the charges are released in a time scale nearly on the order of hours. The charging and discharging are thereby indicated not to rely on ionic transport. The battery effect is reversible in polarity. Storage characteristics are modified when Cu in the ternary alloy is replaced with Ag or Ni in a similar manner to the way the properties of the interfacial resistance switching are altered.
- ItemEffective group dispersion of terahertz quantum-cascade lasers(Bristol : IOP Publ., 2020) Röben, Benjamin; Lü, Xiang; Biermann, Klaus; Schrottke, Lutz; Grahn, Holger T.Terahertz (THz) quantum-cascade lasers (QCLs) are based on complex semiconductor heterostructures, in which the optical gain is generated by intersubband transitions. Using the spacing of the laser modes in the emission spectra, we have determined the effective group refractive index for more than one hundred THz QCLs of the hybrid design with Fabry-Pérot resonators based on single-plasmon waveguides. The experimentally obtained values of for emission frequencies between 2.5 and 5.6 THz generally follow the trend of derived from electromagnetic simulations. However, for a certain number of QCLs, the experimental values of exhibit a rather large deviation from the general trend and the simulation results. From a thorough analysis, we conclude that differences in the optical gain/loss spectra are responsible for this deviation, which lead to a modification of the dispersion in the active region and consequently to altered values of. The analysis also provides evidence that these differences in the gain/loss spectra originate from both, the details of the design and the gain broadening due to interface roughness. © 2020 The Author(s). Published by IOP Publishing Ltd.
- ItemDislocation and indium droplet related emission inhomogeneities in InGaN LEDs(Bristol : IOP Publ., 2021) van Deurzen, Len; Gómez Ruiz, Mikel; Lee, Kevin; Turski, Henryk; Bharadwaj, Shyam; Page, Ryan; Protasenko, Vladimir; Xing, Huili (Grace); Lähnemann, Jonas; Jena, DebdeepThis report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet potassium hydroxide etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N2 formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots due to leakage current and nonradiative recombination.
- ItemLarge-area van der Waals epitaxy and magnetic characterization of Fe3GeTe2 films on graphene(Bristol : IOP Publ., 2021) Lopes, J. Marcelo J.; Czubak, Dietmar; Zallo, Eugenio; Figueroa, Adriana I.; Guillemard, Charles; Valvidares, Manuel; Rubio-Zuazo, Juan; López-Sanchéz, Jesús; Valenzuela, Sergio O.; Hanke, Michael; Ramsteiner, ManfredScalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe3GeTe2 (FGT) - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism (FM) - directly on graphene by employing molecular beam epitaxy. Morphological and structural characterization confirmed the realization of large-area, continuous FGT/graphene heterostructure films with stable interfaces and good crystalline quality. Furthermore, magneto-transport and x-ray magnetic circular dichroism investigations confirmed a robust out-of-plane FM in the layers, comparable to state-of-the-art exfoliated flakes from bulk crystals. These results are highly relevant for further research on wafer-scale growth of vdW heterostructures combining FGT with other layered crystals such as transition metal dichalcogenides for the realization of multifunctional, atomically thin devices. © 2021 The Author(s).
- ItemTerahertz quantum-cascade lasers for high-resolution absorption spectroscopy of atoms and ions in plasmas(Bristol : IOP Publ., 2023) Lü, X.; Röben, B.; Biermann, K.; Wubs, J.R.; Macherius, U.; Weltmann, K.-D.; van Helden, J.H.; Schrottke, L.; Grahn, H.T.We report on terahertz (THz) quantum-cascade lasers (QCLs) based on GaAs/AlAs heterostructures, which exhibit single-mode emission at 3.360, 3.921, and 4.745 THz. These frequencies are in close correspondence to fine-structure transitions of Al atoms, N+ ions, and O atoms, respectively. Due to the low electrical pump power of these THz QCLs, they can be operated in a mechanical cryocooler in continuous-wave mode, while a sufficient intrinsic tuning range of more than 5 GHz is maintained. The single-mode operation and the intrinsic tuning range of these THz QCLs allow for the application of these lasers as radiation sources for high-resolution absorption spectroscopy to determine the absolute densities of Al atoms, N+ ions, and O atoms in plasmas.