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Now showing 1 - 6 of 6
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    A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser
    (Washington, DC : ACS Publications, 2021) Hjort, Filip; Enslin, Johannes; Cobet, Munise; Bergmann, Michael A.; Gustavsson, Johan; Kolbe, Tim; Knauer, Arne; Nippert, Felix; Häusler, Ines; Wagner, Markus R.; Wernicke, Tim; Kneissl, Michael; Haglund, Åsa
    Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280-320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320-400 nm) to UVC (<280 nm). © 2020 American Chemical Society. All rights reserved.
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    The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication
    (Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2021) Deinhart, Victor; Kern, Lisa-Marie; Kirchhof, Jan N.; Juergensen, Sabrina; Sturm, Joris; Krauss, Enno; Feichtner, Thorsten; Kovalchuk, Sviatoslav; Schneider, Michael; Engel, Dieter; Pfau, Bastian; Hecht, Bert; Bolotin, Kirill I.; Reich, Stephanie; Höflich, Katja
    Focused beams of helium ions are a powerful tool for high-fidelity machining with spatial precision below 5 nm. Achieving such a high patterning precision over large areas and for different materials in a reproducible manner, however, is not trivial. Here, we introduce the Python toolbox FIB-o-mat for automated pattern creation and optimization, providing full flexibility to accomplish demanding patterning tasks. FIB-o-mat offers high-level pattern creation, enabling high-fidelity large-area patterning and systematic variations in geometry and raster settings. It also offers low-level beam path creation, providing full control over the beam movement and including sophisticated optimization tools. Three applications showcasing the potential of He ion beam nanofabrication for two-dimensional material systems and devices using FIB-o-mat are presented.
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    Simulation of microwave circuits and laser structures including PML by means of FIT
    (München : European Geopyhsical Union, 2004) Hebermehl, G.; Schefter, J.; Schlundt, R.; Tischler, Th.; Zscheile, H.; Heinrich, W.
    Field-oriented methods which describe the physical properties of microwave circuits and optical structures are an indispensable tool to avoid costly and time-consuming redesign cycles. Commonly the electromagnetic characteristics of the structures are described by the scattering matrix which is extracted from the orthogonal decomposition of the electric field. The electric field is the solution of an eigenvalue and a boundary value problem for Maxwell’s equations in the frequency domain. We discretize the equations with staggered orthogonal grids using the Finite Integration Technique (FIT). Maxwellian grid equations are formulated for staggered nonequidistant rectangular grids and for tetrahedral nets with corresponding dual Voronoi cells. The interesting modes of smallest attenuation are found solving a sequence of eigenvalue problems of modified matrices. To reduce the execution time for high-dimensional problems a coarse and a fine grid is used. The calculations are carried out, using two levels of parallelization. The discretized boundary value problem, a large-scale system of linear algebraic equations with different right-hand sides, is solved by a block Krylov subspace method with various preconditioning techniques. Special attention is paid to the Perfectly Matched Layer boundary condition (PML) which causes non physical modes and a significantly increased number of iterations in the iterative methods.
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    Refractory metal-based ohmic contacts on β-Ga2O3 using TiW
    (Melville, NY : AIP Publ., 2022) Tetzner, Kornelius; Schewski, Robert; Popp, Andreas; Anooz, Saud Bin; Chou, Ta-Shun; Ostermay, Ina; Kirmse, Holm; Würfl, Joachim
    The present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic contact properties were analyzed by transfer length measurements of TiW contacts annealed at temperatures between 400 and 900 °C. Optimum contact properties with a contact resistance down to 1.5 × 10-5 ω cm2 were achieved after annealing at 700 °C in nitrogen on highly doped β-Ga2O3. However, a significant contact resistance increase was observed at annealing temperatures above 700 °C. Cross-sectional analyses of the contacts using scanning transmission electron microscopy revealed the formation of a TiOx interfacial layer of 3-5 nm between TiW and β-Ga2O3. This interlayer features an amorphous structure and most probably possesses a high amount of vacancies and/or Ga impurities supporting charge carrier injection. Upon annealing at temperatures of 900 °C, the interlayer increases in thickness up to 15 nm, featuring crystalline-like properties, suggesting the formation of rutile TiO2. Although severe morphological changes at higher annealing temperatures were also verified by atomic force microscopy, the root cause for the contact resistance increase is attributed to the structural changes in thickness and crystallinity of the interfacial layer.
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    Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions
    (Stevenage : IET, 2022) Ammouri, Nor; Christopher, Heike; Fricke, Jörg; Ginolas, Arnim; Liero, Armin; Maaßdorf, Andre; Wenzel, Hans; Knigge, Andrea
    The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 Âµm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.
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    Versatile high power pulse-laser source for pico- and nanosecond optical pulses
    (London : Institute of Physics, 2020) Liero, Armin; Klehr, Andreas; Knigge, Andrea; Heinrich, Wolfgang
    This paper presents a pulse-laser source for the generation of ps and ns laser pulses with more than 50 W peak output power. The final stages of the drivers use GaN transistors and are capable of switching currents of 0.8 A with 200 ps minimum pulse width and 50 A with 3 ns minimum pulse width. The pulses can be externally triggered by ECL logic. Both single-pulse and pulse train modes are possible.