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    Phase equilibria in the Gd–Cr–Ge system at 1070 K
    (Ivano-Frankivsʹk : Fizyko-chimičnyj instytut DVNZ "Prykarpatsʹkyj nacionalʹnyj universytet imeni Vasylja Stefanyka", 2021) Konyk, M.; Romaka, L.; Stadnyk, Yu.; Romaka, V.V.; Pashkevych, V.
    The isothermal section of the phase diagram of the Gd–Cr–Ge ternary system was constructed at 1070 K over the whole concentration range using X-ray diffractometry, metallography and electron microprobe (EPM) analysis. Three ternary compounds are realized in the Gd–Cr–Ge system at the temperature of annealing: Gd117Cr52Ge112 (Tb117Fe52Ge112 structure type,  space group Fm-3m, Pearson symbol cF1124, a = 2.8971(6) nm), GdCr6Ge6 (SmMn6Sn6 structure type, space group P6/mmm, Pearson symbol hP16, a = 0.51797(2), c = 0.82901(4) nm) and GdCr1-хGe2 (CeNiSi2 structure type, space group Cmcm, Pearson symbol oS16, a = 0.41569(1)-0.41593(8), b = 1.60895(6)-1.60738(3), c = 0.40318(1)-0.40305(8) nm). For the GdCr1-xGe2 compound the homogeneity range was determined (x=0.73 – 0,69).
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    Charge transfer characteristics of F6TCNNQ–gold interface
    (Chichester [u.a.] : Wiley, 2020) Kuhrt, Robert; Hantusch, Martin; Knupfer, Martin; Büchner, Bernd
    The metal–organic interface between polycrystalline gold and hexafluorotetracyanonaphthoquinodimethane (F6TCNNQ) was investigated by photoelectron spectroscopy with the focus on the charge transfer characteristics from the metal to the molecule. The valence levels, as well as the core levels of the heterojunction, indicate a full electron transfer and a change in the chemical environment. The changes are observed in the first F6TCNNQ layers, whereas for further film growth, only neutral F6TCNNQ molecules could be detected. New occupied states below the Fermi level were observed in the valence levels, indicating a lowest unoccupied molecular orbital (LUMO) occupation due to the charge transfer. A fitting of the spectra reveals the presence of a neutral and a charged F6TCNNQ molecules, but no further species were present.
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    Towards low-temperature processing of efficient γ-CsPbI3 perovskite solar cells
    (London [u.a.] : RSC, 2023) Zhang, Zongbao; Ji, Ran; Hofstetter, Yvonne J.; Deconinck, Marielle; Brunner, Julius; Li, Yanxiu; An, Qingzhi; Vaynzof, Yana
    Inorganic cesium lead iodide (CsPbI3) perovskite solar cells (PSCs) have attracted enormous attention due to their excellent thermal stability and optical bandgap (∼1.73 eV), well-suited for tandem device applications. However, achieving high-performance photovoltaic devices processed at low temperatures is still challenging. Here we reported a new method for the fabrication of high-efficiency and stable γ-CsPbI3 PSCs at lower temperatures than was previously possible by introducing the long-chain organic cation salt ethane-1,2-diammonium iodide (EDAI2) and regulating the content of lead acetate (Pb(OAc)2) in the perovskite precursor solution. We find that EDAI2 acts as an intermediate that can promote the formation of γ-CsPbI3, while excess Pb(OAc)2 can further stabilize the γ-phase of CsPbI3 perovskite. Consequently, improved crystallinity and morphology and reduced carrier recombination are observed in the CsPbI3 films fabricated by the new method. By optimizing the hole transport layer of CsPbI3 inverted architecture solar cells, we demonstrate efficiencies of up to 16.6%, surpassing previous reports examining γ-CsPbI3 in inverted PSCs. Notably, the encapsulated solar cells maintain 97% of their initial efficiency at room temperature and under dim light for 25 days, demonstrating the synergistic effect of EDAI2 and Pb(OAc)2 in stabilizing γ-CsPbI3 PSCs.
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    Voltage hysteresis loop as a fingerprint of slow kinetics Co2+-to-Co3+ transition in layered NaxCox/2Ti1−x/2O2 cathodes for sodium batteries
    (London [u.a.] : RSC, 2022) Mikhailova, Daria; Gorbunov, Mikhail V.; An Nguyen, Hoang Bao; Pohle, Björn; Maletti, Sebastian; Heubner, Christian
    Sodium transition metal oxides are one of the most promising cathode materials for future sodium ion batteries. Chemical flexibility of layered Na-oxides including cobalt enables its partial substitution by other redox-active or non-active metals, often leading to structural stabilization. Sharing the same structural positions with other transition metals in layered oxides, Co can be double- or triple-charged, and as Co3+ can adopt a low-spin (LS), intermediate-spin (IS), high-spin (HS) state, or a combination of them. Using Ti4+ in the structure together with Co2+ results in a reduced number of phase transformations compared to Ti-free compositions. However, a large potential hysteresis of about 1.5-2.5 V between battery charge and discharge is observed, pointing a first-order cooperative phase transition. Based on several examples, we found that Na extraction from NaxCox/2Ti1−x/2O2 materials with high-spin HS-Co2+, crystallizing in the P2 or O3 structure, mostly results in valence and spin-state transition of Co, leading to the formation of a second phase with a low-spin LS-Co3+, and a much smaller unit cell volume. We elucidated a kinetic origin of the potential hysteresis, which can be minimized by increasing temperature or reduction of the current density during battery cycling with P2- and O3-Na0.67Co0.33Ti0.67O2 materials. The slow kinetics of the structural phase transition, especially upon Na-insertion, hampers the application of classical methods of electrochemical thermodynamics, such as determining the entropic potential dE/dT. We showed that the entropic potential depends only on the Na-content in NaxCo0.33Ti0.67O2 during battery charge or discharge, what additionally confirms a kinetic nature of the potential hysteresis.
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    Interaction between the components in Tm-Cr-Ge system at 1070 K
    (Ivano-Frankivsʹk : Fizyko-chimičnyj instytut DVNZ "Prykarpatsʹkyj nacionalʹnyj universytet imeni Vasylja Stefanyka", 2022) Romaka, L.; Stadnyk, Y.; Romaka, V.V.; Konyk, M.
    The phase equilibrium diagram of the Tm-Cr-Ge ternary system was constructed at a temperature 1070 K based on the results of X-ray phase, microstructural analyzes and energy-dispersive X-ray spectroscopy in the whole concentration range. At the temperature of investigation, two new ternary compounds are realized in the system: TmCr6Ge6 (SmMn6Sn6 structure type, space group P6/mmm, a=0.51506(1), c=0.82645(2) nm) and Tm4Cr4Ge7 (Zr4Co4Ge7 structure type, space group I4/mmm, а=1.39005(9), с=0.54441(1) nm). Inclusion of Cr atoms in the structure of the binary germanide TmGe2 (structure type ZrSi2) up to 10 at. % Cr leads to the formation of a solid solution TmCrxGe2 (x = 0-0.33).
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    TiNb2O7 and VNB9O25 of ReO3 type in hybrid Mg−Li batteries: Electrochemical and interfacial insights
    (Washington, DC : American Chemical Society, 2020) Maletti, Sebastian; Herzog-Arbeitman, Abraham; Oswald, Steffen; Senyshyn, Anatoliy; Giebeler, Lars; Mikhailova, Daria
    As one of the beyond-lithium battery concepts, hybrid metal-ion batteries have aroused growing interest. Here, TiNb2O7 (TNO) and VNb9O25 (VNO) materials were prepared using a high-temperature solid-state synthesis and, for the first time, comprehensively examined in hybrid Mg−Li batteries. Both materials adopt ReO3-related structures differing in the interconnection of oxygen polyhedra and the resulting guest ion diffusion paths. We show applicability of the compounds in hybrid cells providing capacities comparable to those reached in Li-ion batteries (LIBs) at room temperature (220 mAh g−1 for TNO and 150 mAh g−1 for VNO, both at 0.1 C), their operability in the temperature range between −10 and 60 °C, and even better capacity retention than in pure LIBs, rendering this hybrid technology superior for long-term application. Post mortem X-ray photoelectron spectroscopy reveals a cathode−electrolyte interface as a key ingredient for providing excellent electrochemical stability of the hybrid battery. A significant contribution of the intercalation pseudocapacitance to charge storage was observed for both materials in Li- and Mg−Li batteries. However, the pseudocapacitive part is higher for TNO than for VNO, which correlates with structural distinctions, providing better accessibility of diffusion pathways for guest cations in TNO and, as a consequence, a higher ionic transport within the crystal structure. © 2020 American Chemical Society
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    Influence of chemical interactions on the electronic properties of BiOI/organic semiconductor heterojunctions for application in solution-processed electronics
    (London [u.a.] : RSC, 2023) Lapalikar, Vaidehi; Dacha, Preetam; Hambsch, Mike; Hofstetter, Yvonne J.; Vaynzof, Yana; Mannsfeld, Stefan C. B.; Ruck, Michael
    Bismuth oxide iodide (BiOI) has been viewed as a suitable environmentally-friendly alternative to lead-halide perovskites for low-cost (opto-)electronic applications such as photodetectors, phototransistors and sensors. To enable its incorporation in these devices in a convenient, scalable, and economical way, BiOI thin films were investigated as part of heterojunctions with various p-type organic semiconductors (OSCs) and tested in a field-effect transistor (FET) configuration. The hybrid heterojunctions, which combine the respective functionalities of BiOI and the OSCs were processed from solution under ambient atmosphere. The characteristics of each of these hybrid systems were correlated with the physical and chemical properties of the respective materials using a concept based on heteropolar chemical interactions at the interface. Systems suitable for application in lateral transport devices were identified and it was demonstrated how materials in the hybrids interact to provide improved and synergistic properties. These indentified heterojunction FETs are a first instance of successful incorporation of solution-processed BiOI thin films in a three-terminal device. They show a significant threshold voltage shift and retained carrier mobility compared to pristine OSC devices and open up possibilities for future optoelectronic applications.
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    Modeling of the properties of the semiconductor solid solution Lu1-xVxNiSb in the presence of magnetic ordering; [Моделювання властивостей напівпровідникового твердого розчину Lu1-xVxNiSb за наявності магнітного упорядкування]
    (Ivano-Frankivsʹk : Fizyko-chimičnyj instytut DVNZ "Prykarpatsʹkyj nacionalʹnyj universytet imeni Vasylja Stefanyka", 2023) Romaka, V.V.; Romaka, V.A.; Stadnyk, Yu.; Romaka, L.; Horyn, A.; Pashkevych, V.; Haraniuk, P.
    Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous magnetization. It is shown that the change in the unit cell parameter a(x) and the mixing enthalpy ΔHmix(х) depends little on the presence or absence of spontaneous magnetization. Modeling of the distribution of the density of electronic states DOS in the presence of a magnetic moment on V atoms revealed the splitting of energy states with spins up and down while preserving the band gap εg of Lu1-xVxNiSb. The relationship between the concentration of magnetic V atoms in Lu1-xVxNiSb and the Curie temperature ТС, when spontaneous magnetization is destroyed and the substance becomes paramagnetic, is established. The solid solution semiconductor Lu1-xVxNiSb, provided spontaneous magnetization is present, can be considered as a promising magnetocaloric.
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    XPS chemical state analysis of sputter depth profiling measurements for annealed TiAl-SiO2 and TiAl-W layer stacks
    (Chichester [u.a.] : Wiley, 2020) Oswald, Steffen; Lattner, Eric; Seifert, Marietta
    For the application of surface acoustic wave sensors at high temperatures, both a high-temperature stable piezoelectric substrate and a suitable metallization for the electrodes are needed. Our current attempt is to use TiAl thin films as metallization because this material is also known to be high temperature stable. In this study, Ti/Al multilayers and Ti-Al alloy layers were prepared in combination with an SiO2 cover layer or a W barrier layer at the interface to the substrate (thermally oxidized Si or Ca3TaGa3Si2O14) as an oxidation protection. To form the high-temperature stable γ-TiAl phase and to test the thermal stability of the layer systems, thermal treatments were done in vacuum at several temperatures. We used X-ray photoelectron spectroscopy (XPS) sputter depth-profiling to investigate the film composition and oxidation behavior. In this paper, we demonstrate how the semiautomatic peak fitting can help to extract beside the elemental information also the chemical information from the measured depth profiles. © 2020 The Authors. Surface and Interface Analysis published by John Wiley & Sons Ltd
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    Phase equilibrium diagram of Y-Cu-Sb system at 870 K
    (Ivano-Frankivsʹk : Fizyko-chimičnyj instytut DVNZ "Prykarpatsʹkyj nacionalʹnyj universytet imeni Vasylja Stefanyka", 2023) Romaka, L.; Stadnyk, Yu.; Romaka, V.V.; Zelinskiy, A.; Klyzub, P.; Horyn, A.
    The interaction of the components in the Y-Cu-Sb ternary system was investigated using the methods of X-ray phase analysis, microstructure, and energy-dispersive X-ray spectroscopy in the whole concentration range at 870 K. At the temperature of investigation Y-Cu-Sb system is characterized by the formation of three ternary compounds: Y3Cu22Sb9 (Dy3Cu20+xSb11-x structure type, space group F-43m, a=1.6614(3) nm), Y3Cu3Sb4 (Y3Au3Sb4 structure type, space group I-43d, а = 0.95357(5) nm), YCuSb2 (HfCuSi2 structure type, space group P4/nmm, a = 0.42580(1), c = 0.98932(3) nm). The solubility of copper in the binary compound YSb (NaCl structure type) extends up to 8 at. %.