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End date: 2024 × Start date: 2020 × DDC: 530 × Publisher: London : Nature Publ. Group × WGL Institute: IKZ ×

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    Author Correction: Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe (npj Quantum Information, (2020), 6, 1, (40), 10.1038/s41534-020-0276-2)
    (London : Nature Publ. Group, 2020) Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywiński, Łukasz; Bougeard, Dominique; Schreiber, Lars R.
    The original version of this Article omitted the following from the Acknowledgements: “This work has also been funded by the National Science Centre, Poland under QuantERA program, Grant No. 2017/25/Z/ST3/03044.” This has now been corrected in both the PDF and HTML versions of the Article. © 2020, The Author(s).
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    Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe
    (London : Nature Publ. Group, 2020) Struck, Tom; Hollmann, Arne; Schauer, Floyd; Fedorets, Olexiy; Schmidbauer, Andreas; Sawano, Kentarou; Riemann, Helge; Abrosimov, Nikolay V.; Cywiński, Łukasz; Bougeard, Dominique; Schreiber, Lars R.
    We identify the dominant source for low-frequency spin qubit splitting noise in a highly isotopically-purified silicon device with an embedded nanomagnet and a spin echo decay time T2echo = 128 µs. The power spectral density (PSD) of the charge noise explains both, the clear transition from a 1/f2- to a 1/f-dependence of the splitting noise PSD as well as the experimental observation of a decreasing time-ensemble spin dephasing time, from T2*˜ 20 µs, with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few 73Ge nuclei overlapping with the quantum dot in the barrier do not limit T2*, likely because their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field are the key to further improve the qubit fidelity in isotopically purified 28Si/SiGe. © 2020, The Author(s).
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    Coherent control of electron spin qubits in silicon using a global field
    (London : Nature Publ. Group, 2022) Vahapoglu, E.; Slack-Smith, J.P.; Leon, R.C.C.; Lim, W.H.; Hudson, F.E.; Day, T.; Cifuentes, J.D.; Tanttu, T.; Yang, C. H.; Saraiva, A.; Abrosimov, N.V.; Pohl, H.J.; Thewalt, M.L.W.; Laucht, A.; Dzurak, A.S.; Pla, J.J.
    Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges, including how to control many qubits simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as a way to deliver the magnetic fields for spin qubit control across an entire quantum chip using only a single microwave source. Although spin resonance of individual electrons in the globally applied microwave field was demonstrated, the spins were controlled incoherently. Here we report coherent Rabi oscillations of single electron spin qubits in a planar SiMOS quantum dot device using a global magnetic field generated off-chip. The observation of coherent qubit control driven by a dielectric resonator establishes a credible pathway to achieving large-scale control in a spin-based quantum computer.