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End date: 2024 × Start date: 2020 × DDC: 530 × Publisher: Melville, NY : American Inst. of Physics × WGL Institute: IHP ×

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    Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier
    (Melville, NY : American Inst. of Physics, 2020) Piros, Eszter; Petzold, Stefan; Zintler, Alexander; Kaiser, Nico; Vogel, Tobias; Eilhardt, Robert; Wenger, Christian; Molina-Luna, Leopoldo; Alff, Lambert
    This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resistive random access memory revealed through the temperature dependence of the DC switching behavior. The operation voltages, current levels, and charge transport mechanisms are investigated at 25 °C, 85 °C, and 125 °C, and show overall good temperature immunity. The set and reset voltages, as well as the device resistance in both the high and low resistive states, are found to scale inversely with increasing temperatures. The Schottky-barrier height was observed to increase from approximately 1.02 eV at 25 °C to approximately 1.35 eV at 125 °C, an uncommon behavior explained by interface phenomena. © 2020 Author(s).
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    A comprehensive study of charge transport in Au-contacted graphene on Ge/Si(001)
    (Melville, NY : American Inst. of Physics, 2020) Sinterhauf, Anna; Bode, Simeon; Auge, Manuel; Lukosius, Mindaugas; Lippert, Gunther; Hofsäss, Hans-Christian; Wenderoth, Martin
    We investigate the electronic transport properties of Au-contacted graphene on Ge/Si(001). Kelvin probe force microscopy at room temperature with an additionally applied electric transport field is used to gain a comprehensive understanding of macroscopic transport measurements. In particular, we analyze the contact pads including the transition region, perform local transport measurements in pristine graphene/Germanium, and explore the role of the semiconducting Germanium substrate. We connect the results from these local scale measurements with the macroscopic performance of the device. We find that a graphene sheet on a 2 μm Ge film carries approximately 10% of the current flowing through the device. Moreover, we show that an electronic transition region forms directly adjacent to the contact pads. This transition region is characterized by a width of >100 μm and a strongly increased sheet resistance acting as the bottleneck for charge transport. Based on Rutherford backscattering of the contact pads, we suggest that the formation of this transition region is caused by diffusion. © 2020 Author(s).