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End date: 2024 × Start date: 2020 × DDC: 530 × Publisher: New York, NY : American Inst. of Physics × Subject: Silicon ×

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    On the relationship between SiF4plasma species and sample properties in ultra low-k etching processes
    (New York, NY : American Inst. of Physics, 2020) Haase, Micha; Melzer, Marcel; Lang, Norbert; Ecke, Ramona; Zimmermann, Sven; van Helden, Jean-Pierre H.; Schulz, Stefan E.
    The temporal behavior of the molecular etching product SiF4 in fluorocarbon-based plasmas used for the dry etching of ultra low-k (ULK) materials has been brought into connection with the polymer deposition on the surface during plasma treatment within the scope of this work. For this purpose, time-resolved measurements of the density of SiF4 have been performed by quantum cascade laser absorption spectroscopy. A quantification of the non-linear time dependence was achieved by its characterization via a time constant of the decreasing SiF4 density over the process time. The time constant predicts how fast the stationary SiF4 density is reached. The higher the time constant is, the thicker the polymer film on top of the treated ultra low-k surface. A correlation between the time constant and the ULK damage was also found. ULK damage and polymer deposition were proven by Variable Angle Spectroscopic Ellipsometry and X-ray Photoelectron Spectroscopy. In summary, the observed decay of the etching product concentration over process time is caused by the suppressed desorption of the SiF4 molecules due to a more dominant adsorption of polymers. © 2020 Author(s).
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    High-temperature annealing of AlN films grown on 4H-SiC
    (New York, NY : American Inst. of Physics, 2020) Brunner, F.; Cancellara, L.; Hagedorn, S.; Albrecht, M.; Weyers, M.
    The effect of high-temperature annealing (HTA) at 1700 °C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of the AlN layers improves significantly after HTA similar to what has been demonstrated for AlN grown on sapphire. Dislocation densities reduce by one order of magnitude resulting in 8 × 108 cm-2 for a-type and 1 × 108 cm-2 for c-type dislocations. The high-temperature treatment removes pits from the surface by dissolving nanotubes and dislocations in the material. XRD measurements prove that the residual strain in AlN/4H-SiC is further relaxed after annealing. AlN films grown at higher temperature resulting in a lower as-grown defect density show only a marginal reduction in dislocation density after annealing. Secondary ion mass spectrometry investigation of impurity concentrations reveals an increase of Si after HTA probably due to in-diffusion from the SiC substrate. However, C concentration reduces considerably with HTA that points to an efficient carbon removal process (i.e., CO formation). © 2020 Author(s).