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- ItemHeading for brighter and faster β-Ga2O3 scintillator crystals(Amsterdam : Elsevier, 2022) Drozdowski, Winicjusz; Makowski, Michał; Bachiri, Abdellah; Witkowski, Marcin E.; Wojtowicz, Andrzej J.; Swiderski, Lukasz; Irmscher, Klaus; Schewski, Robert; Galazka, ZbigniewCzochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their basic scintillation properties. At room temperature, with increasing free electron concentration in the studied range, the scintillation yields decrease from 8920 to 1930 ph/MeV, while the mean scintillation decay times pare down from 989 to 61 ns. However, when the brightest β-Ga2O3 sample is cooled down below 100 K, its scintillation yield exceeds 20000 ph/MeV.
- ItemLow temperature thermoluminescence of β-Ga2O3 scintillator(Amsterdam : Elsevier, 2022) Witkowski, Marcin E.; Drozdowski, Konrad J.; Makowski, Michał; Drozdowski, Winicjusz; Wojtowicz, Andrzej J.; Irmscher, Klaus; Schewski, Robert; Galazka, ZbigniewLow temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture cross-sections and probabilities of recombination and retrapping.