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End date: 2024 × Start date: 2020 × DDC: 530 × Subject: GeSn × WGL Institute: IHP ×

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    CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
    (Washington, DC : ACS Publications, 2021) Talamas Simola, Enrico; Kiyek, Vivien; Ballabio, Andrea; Schlykow, Viktoria; Frigerio, Jacopo; Zucchetti, Carlo; De Iacovo, Andrea; Colace, Lorenzo; Yamamoto, Yuji; Capellini, Giovanni; Grützmacher, Detlev; Buca, Dan; Isella, Giovanni
    Infrared (IR) multispectral detection is attracting increasing interest with the rising demand for high spectral sensitivity, room temperature operation, CMOS-compatible devices. Here, we present a two-terminal dual-band detector, which provides a bias-switchable spectral response in two distinct IR bands. The device is obtained from a vertical GeSn/Ge/Si stack, forming a double junction n-i-p-i-n structure, epitaxially grown on a Si wafer. The photoresponse can be switched by inverting the bias polarity between the near and the short-wave IR bands, with specific detectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively. The possibility of detecting two spectral bands with the same pixel opens up interesting applications in the field of IR imaging and material recognition, as shown in a solvent detection test. The continuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis, demonstrated by identifying the wavelength of a monochromatic beam. © 2021 The Authors. Published by American Chemical Society.
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    Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
    (Bristol : IOP Publ., 2020) Schlykow, Viktoria; Manganelli, Costanza Lucia; Römer, Friedhard; Clausen, Caterina; Augel, Lion; Schulze, Jörg; Katzer, Jens; Schubert, Michael Andreas; Witzigmann, Bernd; Schroeder, Thomas; Capellini, Giovanni; Fischer, Inga Anita
    We report on photodetection in deep subwavelength Ge(Sn) nano-islands on Si nano-pillar substrates, in which self-aligned nano-antennas in the Al contact metal are used to enhance light absorption by means of local surface plasmon resonances. The impact of parameters such as substrate doping and device geometry on the measured responsivities are investigated and our experimental results are supported by simulations of the three-dimensional distribution of the electromagnetic fields. Comparatively high optical responsivities of about 0.1 A W-1 are observed as a consequence of the excitation of localized surface plasmons, making our nano-island photodetectors interesting for applications in which size reduction is essential. © 2020 The Author(s). Published by IOP Publishing Ltd.