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- ItemEffect of Liquid Hot Water Pretreatment on Hydrolysates Composition and Methane Yield of Rice Processing Residue(Basel : MDPI, 2021) López González, Lisbet Mailin; Heiermann, MonikaLignocellulosic rice processing residue was pretreated in liquid hot water (LHW) at three different temperatures (140, 160, and 180 °C) and two pretreatment times (10 and 20 min) in order to assess its effects on hydrolysates composition, matrix structural changes and methane yield. The concentrations of acetic acid, 5-hydroxymethylfurfural and furfural increased with pretreatment severity (log Ro). The maximum methane yield (276 L kg−1 VS) was achieved under pretreatment conditions of 180 °C for 20 min, with a 63% increase compared to untreated biomass. Structural changes resulted in a slight removal of silica on the upper portion of rice husks, visible predominantly at maximum severity. However, the outer epidermis was kept well organized. The results indicate, at severities 2.48 ≤ log Ro ≤ 3.66, a significant potential for the use of LHW to improve methane production from rice processing residue.
- ItemImpact of rare earth doping on the luminescence of lanthanum aluminum silicate glasses for radiation sensing(Washington, DC : OSA, 2022) Shaw, Ruth E.; Kalnins, Christopher A. G.; Whittaker, Carly A.; Moffatt, Jillian E.; Tsiminis, Georgios; Klantsataya, Elizaveta; Ottaway, David; Spooner, Nigel A.; Litzkendorf, Doris; Matthes, Anne; Schwuchow, Anka; Wondraczek, Katrin; Ebendorff-Heidepriem, HeikeLarge core soft glass fibers have been demonstrated to be promising candidates as intrinsic fiber sensors for radiation detection and dosimetry applications. Doping with rare earth ions enhanced their radiation sensitivity. SiO2-Al2O3-La2O3 (SAL) glasses offer easy fabrication of large core fibers with high rare earth concentration and higher mechanical strength than soft glasses. This paper evaluates the suitability of the SAL glass type for radiation dosimetry based on optically stimulated luminescence (OSL) via a comprehensive investigation of the spectroscopic and dosimetric properties of undoped and differently rare earth doped bulk SAL glass samples. Due to the low intensity of the rare earth luminescence peaks in the 250–400 nm OSL detection range, the OSL response for all the SAL glasses is not caused by the rare earth ions but by radiation-induced defects that act as intrinsic centers for the recombination of electrons and holes produced by the ionizing radiation, trapped in fabrication induced defect centers, and then released via stimulation with 470 nm light. The rare earth ions interfere with these processes involving intrinsic centers. This dosimetric behavior of highly rare earth doped SAL glasses suggests that enhancement of OSL response requires lower rare earth concentrations and/or longer wavelength OSL detection range.
- ItemHigh temperature behavior of rual thin films on piezoelectric CTGS and LGS substrates(Basel : MDPI AG, 2020) Seifert, M.This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca3TaGa3Si2O14 (CTGS) and La3Ga5SiO14 (LGS) substrates. RuAl thin films with AlN or SiO2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In somefilms, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO2 barrier layer and up to 800 °C in air using a SiO2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.
- ItemUltrafast laser inscription of asymmetric integrated waveguide 3 dB couplers for astronomical K-band interferometry at the CHARA array(Washington, DC : Soc., 2021) Benoît, Aurélien; Pike, Fraser A.; Sharma, Tarun K.; MacLachlan, David G.; Dinkelaker, Aline N.; Nayak, Abani S.; Madhav, Kalaga; Roth, Martin M.; Labadie, Lucas; Pedretti, Ettore; Brummelaar, Theo A. ten; Scott, Nic; Coudé du Foresto, Vincent; Thomson, Robert R.We present the fabrication and characterization of 3 dB asymmetric directional couplers for the astronomical K-band at wavelengths between 2.0 and 2.4 µm. The couplers were fabricated in commercial Infrasil silica glass using an ultrafast laser operating at 1030 nm. After optimizing the fabrication parameters, the insertion losses of straight single-mode waveguides were measured to be ∼1.2±0.5dB across the full K-band. We investigate the development of asymmetric 3 dB directional couplers by varying the coupler interaction lengths and by varying the width of one of the waveguide cores to detune the propagation constants of the coupled modes. In this manner, we demonstrate that ultrafast laser inscription is capable of fabricating asymmetric 3 dB directional couplers for future applications in K-band stellar interferometry. Finally, we demonstrate that our couplers exhibit an interferometric fringe contrast of >90%. This technology paves the path for the development of a two-telescope K-band integrated optic beam combiner for interferometry to replace the existing beam combiner (MONA) in Jouvence of the Fiber Linked Unit for Recombination (JouFLU) at the Center for High Angular Resolution Astronomy (CHARA) telescope array.
- ItemEditors' Choice - Precipitation of Suboxides in Silicon, their Role in Gettering of Copper Impurities and Carrier Recombination(Pennington, NJ : ECS, 2020) Kissinger, G.; Kot, D.; Huber, A.; Kretschmer, R.; Müller, T.; Sattler, A.This paper describes a theoretical investigation of the phase composition of oxide precipitates and the corresponding emission of self-interstitials at the minimum of the free energy and their evolution with increasing number of oxygen atoms in the precipitates. The results can explain the compositional evolution of oxide precipitates and the role of self-interstitials therein. The formation of suboxides at the edges of SiO2 precipitates after reaching a critical size can explain several phenomena like gettering of Cu by segregation to the suboxide region and lifetime reduction by recombination of minority carriers in the suboxide. It provides an alternative explanation, based on minimized free energy, to the theory of strained and unstrained plates. A second emphasis was payed to the evolution of the morphology of oxide precipitates. Based on the comparison with results from scanning transmission electron microscopy the sequence of morphology evolution of oxide precipitates was deduced. It turned out that it is opposite to the sequence assumed until now. © 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
- ItemPhase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates(Basel : MDPI AG, 2020) Seifert, M.; Lattner, E.; Menzel, S.B.; Oswald, S.; Gemming, T.Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.
- ItemSuitability of binary oxides for molecular-beam epitaxy source materials: A comprehensive thermodynamic analysis(Melville, NY : AIP Publ., 2020) Adkison, Kate M.; Shang, Shun-Li; Bocklund, Brandon J.; Klimm, Detlef; Schlom, Darrell G.; Liu, Zi-KuiWe have conducted a comprehensive thermodynamic analysis of the volatility of 128 binary oxides to evaluate their suitability as source materials for oxide molecular-beam epitaxy (MBE). 16 solid or liquid oxides are identified that evaporate nearly congruently from stable oxide sources to gas species: As2O3, B2O3, BaO, MoO3, OsO4, P2O5, PbO, PuO2, Rb2O, Re2O7, Sb2O3, SeO2, SnO, ThO2, Tl2O, and WO3. An additional 24 oxides could provide molecular beams with dominant gas species of CeO, Cs2O, DyO, ErO, Ga2O, GdO, GeO, HfO, HoO, In2O, LaO, LuO, NdO, PmO, PrO, PuO, ScO, SiO, SmO, TbO, Te2O2, U2O6, VO2, and YO2. The present findings are in close accord with available experimental results in the literature. For example, As2O3, B2O3, BaO, MoO3, PbO, Sb2O3, and WO3 are the only oxides in the ideal category that have been used in MBE. The remaining oxides deemed ideal for MBE awaiting experimental verification. We also consider two-phase mixtures as a route to achieve the desired congruent evaporation characteristic of an ideal MBE source. These include (Ga2O3 + Ga) to produce a molecular beam of Ga2O(g), (GeO2 + Ge) to produce GeO(g), (SiO2 + Si) to produce SiO(g), (SnO2 + Sn) to produce SnO(g), etc.; these suboxide sources enable suboxide MBE. Our analysis provides the vapor pressures of the gas species over the condensed phases of 128 binary oxides, which may be either solid or liquid depending on the melting temperature. © 2020 Author(s).
- ItemDirect observation of modal hybridization in nanofluidic fiber [Invited](Washington, DC : OSA, 2021) Gomes, André D.; Zhao, Jiangbo Tim; Tuniz, Alessandro; Schmidt, Markus A.Hybrid-material optical fibers enhance the capabilities of fiber-optics technologies, extending current functionalities to several emerging application areas. Such platforms rely on the integration of novel materials into the fiber core or cladding, thereby supporting hybrid modes with new characteristics. Here we present experiments that reveal hybrid mode interactions within a doped-core silica fiber containing a central high-index nanofluidic channel. Compared with a standard liquid-filled capillary, calculations predict modes with unique properties emerging as a result of the doped core/cladding interface, possessing a high power fraction inside and outside the nanofluidic channel. Our experiments directly reveal the beating pattern in the fluorescent liquid resulting from the excitation of the first two linearly polarized hybrid modes in this system, being in excellent agreement with theoretical predictions. The efficient excitation and beat of such modes in such an off-resonance situation distinguishes our device from regular directional mode couplers and can benefit applications that demand strong coupling between fundamental- and higher-order- modes, e.g. intermodal third-harmonic generation, bidirectional coupling, and nanofluidic sensing.
- ItemEfficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O(Melville, NY : AIP Publ., 2020) Hoffmann, Georg; Budde, Melanie; Mazzolini, Piero; Bierwagend, OliverSources of suboxides, providing several advantages over metal sources for the molecular beam epitaxy (MBE) of oxides, are conventionally realized by decomposing the corresponding oxide charge at extreme temperatures. By quadrupole mass spectrometry of the direct flux from an effusion cell, we compare this conventional approach to the reaction of a mixed oxide + metal charge as a source for suboxides with the examples of SnO2 + Sn → 2 SnO and Ga2O3 + 4 Ga → 3 Ga2O. The high decomposition temperatures of the pure oxide charge were found to produce a high parasitic oxygen background. In contrast, the mixed charges reacted at significantly lower temperatures, providing high suboxide fluxes without additional parasitic oxygen. For the SnO source, we found a significant fraction of Sn2O2 in the flux from the mixed charge that was basically absent in the flux from the pure oxide charge. We demonstrate the plasma-assisted MBE growth of SnO2 using the mixed Sn + SnO2 charge to require less activated oxygen and a significantly lower source temperature than the corresponding growth from a pure Sn charge. Thus, the sublimation of mixed metal + oxide charges provides an efficient suboxide source for the growth of oxides by MBE. Thermodynamic calculations predict this advantage for further oxides as well, e.g., SiO2, GeO2, Al2O3, In2O3, La2O3, and Pr2O3 © 2020 Author(s).
- ItemLateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication(Pennington, NJ : ECS, 2023) Anand, K.; Schubert, M.A.; Corley-Wiciak, A.A.; Spirito, D.; Corley-Wiciak, C.; Klesse, W.M.; Mai, A.; Tillack, B.; Yamamoto, Y.Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [−110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping.