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Spatially modulated broad-area lasers for narrow lateral far-field divergence
A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3° full width at half maximum (ΘFWHM=0.3∘) where a 0.4°-wide main lobe contains 40% of the emitted optical output power (Θ40%=0.4∘). While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central 1∘ angular range, the measured far-field intensity outside of the obtained central peak remains high.
Three-Dimensional Cobalt Hydroxide Hollow Cube/Vertical Nanosheets with High Desalination Capacity and Long-Term Performance Stability in Capacitive Deionization
Faradaic electrode materials have significantly improved the performance of membrane capacitive deionization, which offers an opportunity to produce freshwater from seawater or brackish water in an energy-efficient way. However, Faradaic materials hold the drawbacks of slow desalination rate due to the intrinsic low ion diffusion kinetics and inferior stability arising from the volume expansion during ion intercalation, impeding the engineering application of capacitive deionization. Herein, a pseudocapacitive material with hollow architecture was prepared via template-etching method, namely, cuboid cobalt hydroxide, with fast desalination rate (3.3 mg (NaCl)·g-1 (h-Co(OH)2)·min-1 at 100 mA·g-1) and outstanding stability (90% capacity retention after 100 cycles). The hollow structure enables swift ion transport inside the material and keeps the electrode intact by alleviating the stress induced from volume expansion during the ion capture process, which is corroborated well by in situ electrochemical dilatometry and finite element simulation. Additionally, benefiting from the elimination of unreacted bulk material and vertical cobalt hydroxide nanosheets on the exterior surface, the synthesized material provides a high desalination capacity ( mg (NaCl)·g-1 (h-Co(OH)2) at 30 mA·g-1). This work provides a new strategy, constructing microscale hollow faradic configuration, to further boost the desalination performance of Faradaic materials.
Laser-induced reactive microplasma for etching of fused silica
The ultra-precise machining (UPM) of surfaces with contact-free, beam-based technologies enables the development of flexible and reliable fabrication methods by non-vacuum processes for future application in advanced industrial fields. Laser machining by laser ablation features limitations for ultra-precise machining due to the depth precision, the surface morphology, and laser-induced defect formation. Contrary to physically-based etching, chemical-based dry and wet processing offer high quality, low damage material removal. In order to take advantage of both principles, a combined laser-plasma process is introduced. Ultra-short laser pulses are used to induce a free-standing microplasma in a CF4 gas atmosphere due to an optical breakdown. CF4 gas, with a pressure of 800–900 mbar, is ionized only near the focal point and reactive species are generated therein. Reactive species of the laser-induced microplasma can interact with the surface atoms of the target material forming volatile products. The release of these products is enhanced by the pulsed, laser-induced plasma resulting in material etching. In the present study, SiO2 surfaces were etched with reactive species of CF4 microplasma generated by their laser-induced break down with 775 nm pulses of an fs-laser (150 fs) at a repetition rate of 1 kHz. The dependency of the depth, the width, and the morphology of the etching pits were analysed systematically against the process parameters used. In particular, a linear increase of the etching depth up to 10 µm was achieved. The etched surface appears smooth without visible cracks, defects, or LIPSS (Laser-induced periodic surface structures). © 2020, The Author(s).
Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication
Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [−110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping.