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- ItemOptimizing Vertical and Lateral Waveguides of kW-Class Laser Bars for Higher Peak Power, Efficiency and Lateral Beam Quality(New York, NY : IEEE, 2022) Miah, M. Jarez; Boni, Anisuzzaman; Arslan, Seval; Martin, Dominik; Casa, Pietro Della; Crump, PaulGaAs-based, highly-efficient, kW-class, 1-cm laser bars with high peak power P opt and improved beam quality in quasi-continuous-wave mode are presented. The use of an extreme-triple-asymmetric (ETAS) epitaxial layer structure diminishes power saturation of high-power bars at high driving current. The resulting ETAS bars with 4 mm cavity produce a record 1.9 kW peak power, limited by available current supply, with a maximum power conversion efficiency η E = 67% at T HS = 25 °C heat-sink temperature. Both P opt and η E have been increased further by operating the bars at T HS = −70 °C. Sub-zero operation raises the P opt to 2.3 kW and the maximum η E to 74%. A second configuration of ETAS bars with optimized lateral layout is further realized to obtain narrow lateral beam divergence θ up to 2 kA driving current, without sacrificing P opt and η E . A 2–3° lower θ (95% power level) is observed over a wide operating range at room temperature. A high degree of polarization is also maintained across the whole operatingrange.
- Item60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers(New York, NY : IEEE, 2022) Crump, Paul; Miah, M. Jarez; Wilkens, Martin; Fricke, Jorg; Wenzel, Hans; Knigge, AndreaProgress in epitaxial design is shown to enable increased optical output power P opt and power conversion efficiency η E and decreased lateral far-field divergence angle in GaAs-based distributed Bragg reflector (DBR) broad-area (BA) diode lasers. We show that the wavelength-locked power can be significantly increased (saturation at high bias current is mitigated) by migrating from an asymmetric large optical cavity (ASLOC) based laser structure to a highly asymmetric (extreme-triple-asymmetric (ETAS)) layer design. For wavelength-stabilization, 7 th order, monolithic DBRs are etched on the surface of fully grown epitaxial layer structures. The investigated ETAS reference Fabry-Pérot (FP) BA lasers without DBRs and with 200 µm stripe width and 4 mm cavity length provide P opt = 29 W (still increasing) at 30 A in continuous-wave mode at room temperature, in contrast to the maximum P opt = 24 W (limited by strong power saturation) of baseline ASLOC lasers. The reference ETAS FP lasers also deliver over 10% higher η E at P opt = 24 W. On the other hand, in comparison to the wavelength-stabilized ASLOC DBR lasers, ETAS DBR lasers show a peak power increment from 14 W to 22 W, and an efficiency increment from 46% to 60% at P opt = 14 W. A narrow spectral width (< 1 nm at 95% power content) is maintained across a very wide operating range. Consistent with earlier studies, a narrower far-field divergence angle and consequently an improved beam-parameter product is also observed, compared to the ASLOC-based lasers.
- ItemHigh-Performance GaAs/AlAs Terahertz Quantum-Cascade Lasers for Spectroscopic Applications(New York, NY : IEEE, 2020) Schrottke, Lutz; Lü, Xiang; Röben, Benjamin; Biermann, Klaus; Hagelschuer, Till; Wienold, Martin; Hübers, Heinz-Wilhelm; Hannemann, Mario; van Helden, Jean-Pierre H.; Röpcke, Jürgen; Grahn, Holger T.We have developed terahertz (THz) quantum-cascade lasers (QCLs) based on GaAs/AlAs heterostructures for application-defined emission frequencies between 3.4 and 5.0 THz. Due to their narrow line width and rather large intrinsic tuning range, these THz QCLs can be used as local oscillators in airborne or satellite-based astronomical instruments or as radiation sources for high-resolution absorption spectroscopy, which is expected to allow for a quantitative determination of the density of atoms and ions in plasma processes. The GaAs/AlAs THz QCLs can be operated in mechanical cryocoolers and even in miniature cryocoolers due to the comparatively high wall-plug efficiency of around 0.2% and typical current densities below 500 A/cm$^2$. These lasers emit output powers of more than 1 mW at operating temperatures up to about 70 K, which is sufficient for most of the abovementioned applications. © 2011-2012 IEEE.
- ItemPredictive Modeling of Antibiotic Susceptibility in E. Coli Strains Using the U-Net Network and One-Class Classification(New York, NY : IEEE, 2020) Ali, Nairveen; Kirchhoff, Johanna; Onoja, Patrick Igoche; Tannert, Astrid; Neugebauer, Ute; Popp, Jürgen; Bocklitz, ThomasThe antibiotic resistance of bacterial pathogens has become one of the most serious global health issues due to misusing and overusing of antibiotics. Recently, different technologies were developed to determine bacteria susceptibility towards antibiotics; however, each of these technologies has its advantages and limitations in clinical applications. In this contribution, we aim to assess and automate the detection of bacterial susceptibilities towards three antibiotics; i.e. ciprofloxacin, cefotaxime and piperacillin using a combination of image processing and machine learning algorithms. Therein, microscopic images were collected from different E. coli strains, then the convolutional neural network U-Net was implemented to segment the areas showing bacteria. Subsequently, the encoder part of the trained U-Net was utilized as a feature extractor, and the U-Net bottleneck features were utilized to predict the antibiotic susceptibility of E. coli strains using a one-class support vector machine (OCSVM). This one-class model was always trained on images of untreated controls of each bacterial strain while the image labels of treated bacteria were predicted as control or non-control images. If an image of treated bacteria is predicted as control, we assume that these bacteria resist this antibiotic. In contrast, the sensitive bacteria show different morphology of the control bacteria; therefore, images collected from these treated bacteria are expected to be classified as non-control. Our results showed 83% area under the receiver operating characteristic (ROC) curve when OCSVM models were built using the U-Net bottleneck features of control bacteria images only. Additionally, the mean sensitivities of these one-class models are 91.67% and 86.61% for cefotaxime and piperacillin; respectively. The mean sensitivity for the prediction of ciprofloxacin is only 59.72% as the bacteria morphology was not fully detected by the proposed method.
- Item168-195 GHz Power Amplifier with Output Power Larger Than 18 dBm in BiCMOS Technology(New York, NY : IEEE, 2020) Ali, Abdul; Yun, Jongwon; Giannini, Franco; Ng, Herman Jalli; Kissinger, Dietmar; Colantonio, PaoloThis paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and an output power higher than 27 dB and 13 dBm, respectively. Then, a 4-way combiner/splitter was designed using low-loss transmission lines at 130-210 GHz. Finally, the combiner was loaded with four single-ended PAs to complete the design of a 4-way combined PA. The chip of the fabricated PA occupies an area of 1.35mm2. The realized PA shows a saturated output power of 18.1 dBm with a peak gain of 25.9 dB and power-added efficiency (PAE) of 3.5% at 185 GHz. A maximum output power of 18.7 dBm with PAE of 4.4% is achieved at 170 GHz. The 3-dB and 6-dB bandwidth of the PA are 27 and 42 GHz, respectively. In addition, the PA delivers a saturated output power higher than 18 dBm in the frequency range 140-186 GHz. To the best of our knowledge, the power reported in this paper is the highest for G-band SiGe BiCMOS PAs. © 2013 IEEE.
- Item240-GHz Reflectometer-Based Dielectric Sensor With Integrated Transducers in a 130-nm SiGe BiCMOS Technology(New York, NY : IEEE, 2021) Wang, Defu; Eissa, Mohamed Hussein; Schmalz, Klaus; Kampfe, Thomas; Kissinger, DietmarThis article presents a reflectometer-based on-chip dielectric sensor with integrated transducers at 240 GHz. The chip simplifies the measurement of a vector network analyzer (VNA) to sense the incident and reflected waves by using two heterodyne mixer-based receivers with a dielectric sensing element. Radio frequency (RF) and local oscillator (LO) submillimeter waves are generated by two frequency multiplier chains, respectively. Two back-to-back identical differential side-coupled directive couplers are proposed to separate the incident and reflected signals and couple them to mixers. Both transmission line and coplanar stripline transducers are proposed and integrated with reflectometer to investigate the sensitivity of dielectric sensors. The latter leads to a larger power variation of the reflectometer by providing more sufficient operating bands for the magnitude and phase slope of S11 . The readout of the transducers upon exposure to liquids is performed by the measurement of their reflected signals using two external excitation sources. The experimental dielectric sensing is demonstrated by using binary methanol–ethanol mixture placed on the proposed on-chip dielectric sensor in the assembled printed circuit board. It enables a maximum 8 dB of the power difference between the incident and reflected channels on the measurement of liquid solvents. Both chips occupy an area of 4.03 mm 2 and consume 560 mW. Along with a wide operational frequency range from 200 to 240 GHz, this simplified one-port-VNA-based on-chip device makes it feasible for the use of handle product and suitable for the submillimeter-wave dielectric spectroscopy applications.
- ItemIEEE Access Special Section Editorial: Recent Advances on Hybrid Complex Networks: Analysis and Control(New York, NY : IEEE, 2021) Lu, Jianquan; Ho, Daniel W. C.; Huang, Tingwen; Kurths, Jurgen; Trajkovic, LjiljanaComplex networks typically involve multiple disciplines due to network dynamics and their statistical nature. When modeling practical networks, both impulsive effects and logical dynamics have recently attracted increasing attention. Hence, it is of interest and importance to consider hybrid complex networks with impulsive effects and logical dynamics. Relevant research is prevalent in cells, ecology, social systems, and communication engineering. In hybrid complex networks, numerous nodes are coupled through networks and their properties usually lead to complex dynamic behaviors, including discrete and continuous dynamics with finite values of time and state space. Generally, continuous and discrete sections of the systems are described by differential and difference equations, respectively. Logical networks are used to model the systems where time and state space take finite values. Although interesting results have been reported regarding hybrid complex networks, the analysis methods and relevant results could be further improved with respect to conservative impulsive delay inequalities and reproducibility of corresponding stability or synchronization criteria. Therefore, it is necessary to devise effective approaches to improve the analysis method and results dealing with hybrid complex networks.
- ItemRidge Gap Waveguide Based Liquid Crystal Phase Shifter(New York, NY : IEEE, 2020) Nickel, Matthias; Jiménez-Sáez, Alejandro; Agrawal, Prannoy; Gadallah, Ahmed; Malignaggi, Andrea; Schuster, Christian; Reese, Roland; Tesmer, Henning; Polat, Ersin; Schumacher, Peter; Jakoby, Rolf; Kissinger, Dietmar; Maune, HolgerIn this paper, the gap waveguide technology is examined for packaging liquid crystal (LC) in tunable microwave devices. For this purpose, a line based passive phase shifter is designed and implemented in a ridge gap waveguide (RGW) topology and filled with LC serving as functional material. The inherent direct current (DC) decoupling property of gap waveguides is used to utilize the waveguide surroundings as biasing electrodes for tuning the LC. The bed of nails structure of the RGW exhibits an E-field suppression of 76 dB in simulation, forming a completely shielded device. The phase shifter shows a maximum figure of merit (FoM) of 70 °/dB from 20 GHz to 30 GHz with a differential phase shift of 387° at 25 GHz. The insertion loss ranges from 3.5 dB to 5.5 dB depending on the applied biasing voltage of 0 V to 60 V. © 2013 IEEE.
- ItemA QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link with a 220-255 GHz Tunable LO in a SiGe HBT Technology(New York, NY : IEEE, 2020) RodrÃguez-Vázquez, Pedro; Grzyb, Janusz; Heinemann, Bernd; Pfeiffer, Ullrich R.In this article, a polarization-diversity technique multiple-input multiple-output (MIMO) is demonstrated to double the spectral efficiency of a line-of-sight quadrature phase-shift keying (QPSK) wireless link at 220-255 GHz with a pair of highly integrated single-chip transmitter (TX) and receiver (RX) front-end modules in 0.13-µ {m SiGe HBT technology ( fTmax=350 /550 GHz) exploiting only a low-cost wire-bonded chip-on-board packaging solution for high-speed baseband (BB) signals. Both TX and RX chips accommodate two independent fundamentally operated direct-conversion in-phase and quadrature (IQ) paths with separately tunable on-chip multiplier-based ( × 16 ) local oscillator (LO) generation paths driven from a single external highly stable 13.75-16-GHz frequency synthesizer. On the RX side, a mixer-first architecture is implemented to improve the symmetry between upper and lower sidebands (USB and LSB) at the cost of an increased noise figure (NF), whereas, on the TX chip, each upconversion mixer is followed by a gain-bandwidth (BW)-limited four-stage power amplifier (PA) to support the link budget at a meter distance. Next, two independent IQ data streams from the upconversion/downconversion paths on each chip are directed to a common lens-coupled broadband on-chip slot antenna system. This way, two orthogonal circular polarizations [left-handed circular polarization (LHCP) and right-handed circular polarization (RHCP)] can be transmitted with sufficient isolation for link operation without the need for a high-speed depolarizer in the BB for any relative orientation between TX and RX modules. The antenna combined with a 9-mm diameter Si-lens provides a directivity of 23.5-27 dBi at 210-270 GHz for each of the modules. This, along with a peak radiated power of 7.5 dBm/ch from the TX module, and the cascaded conversion gain (CG)/single sideband (SSB) NF of 18/18 dB/ch for the RX module followed by a broadband amplifier (PSPL5882) from Tektronix allowed successful transmission of two independent QPSK data streams with an aggregate speed of 110 and 80 Gb/s over 1 and 2 m, respectively, at 230 GHz with a board-level limited channel BB bandwidth (BW) of 13.5 GHz. © 1963-2012 IEEE.
- ItemCMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release(New York, NY : IEEE, 2020) Steglich, Patrick; Bondarenko, Siegfried; Mai, Christian; Paul, Martin; Weller, Michael G.; Mai, AndreasSilicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU. © 1989-2012 IEEE.