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- ItemNew methodology to process shifted excitation Raman difference spectroscopy data : a case study of pollen classification([London] : Macmillan Publishers Limited, 2020) Korinth, F.; Mondol, A.S.; Stiebing, C.; Schie, I.W.; Krafft, C.; Popp, J.Shifted excitation Raman difference spectroscopy (SERDS) is a background correction method for Raman spectroscopy. Here, the difference spectra were directly used as input for SERDS-based classification after an optimization procedure to correct for photobleaching of the autofluorescence. Further processing included a principal component analysis to compensate for the reduced signal to noise ratio of the difference spectra and subsequent classification by linear discriminant analysis. As a case study 6,028 Raman spectra of single pollen originating from plants of eight different genera and four different growth habits were automatically recorded at excitation wavelengths 784 and 786 nm using a high-throughput screening Raman system. Different pollen were distinguished according to their growth habit, i.e. tree versus non-tree with an accuracy of 95.9%. Furthermore, all pollen were separated according to their genus, providing also insight into similarities based on their families. Classification results were compared using spectra reconstructed from the differences and raw spectra after state-of-art baseline correction as input. Similar sensitivities, specificities, accuracies and precisions were found for all spectra with moderately background. Advantages of SERDS are expected in scenarios where Raman spectra are affected by variations due to detector etaloning, ambient light, and high background.
- ItemIncreased static dielectric constant in ZnMnO and ZnCoO thin films with bound magnetic polarons(London : Nature Publishing Group, 2020) Vegesna, S.V.; Bhat, V.J.; Bürger, D.; Dellith, J.; Skorupa, I.; Schmidt, O.G.; Schmidt, H.A novel small signal equivalent circuit model is proposed in the inversion regime of metal/(ZnO, ZnMnO, and ZnCoO) semiconductor/Si3N4 insulator/p-Si semiconductor (MSIS) structures to describe the distinctive nonlinear frequency dependent capacitance (C-F) and conductance (G-F) behaviour in the frequency range from 50 Hz to 1 MHz. We modelled the fully depleted ZnO thin films to extract the static dielectric constant (εr) of ZnO, ZnMnO, and ZnCoO. The extracted enhancement of static dielectric constant in magnetic n-type conducting ZnCoO (εr ≥ 13.0) and ZnMnO (εr ≥ 25.8) in comparison to unmagnetic ZnO (εr = 8.3–9.3) is related to the electrical polarizability of donor-type bound magnetic polarons (BMP) in the several hundred GHz range (120 GHz for CdMnTe). The formation of donor-BMP is enabled in n-type conducting, magnetic ZnO by the s-d exchange interaction between the electron spin of positively charged oxygen vacancies Vo+ in the BMP center and the electron spins of substitutional Mn2+ and Co2+ ions in ZnMnO and ZnCoO, respectively. The BMP radius scales with the Bohr radius which is proportional to the static dielectric constant. Here we show how BMP overlap can be realized in magnetic n-ZnO by increasing its static dielectric constant and guide researchers in the field of transparent spintronics towards ferromagnetism in magnetic, n-ZnO.