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    Design, implementation, evaluation and application of a 32-channel radio frequency signal generator for thermal magnetic resonance based anti-cancer treatment
    (Basel : MDPI AG, 2020) Han, Haopeng; Eigentler, Thomas Wilhelm; Wang, Shuailin; Kretov, Egor; Winter, Lukas; Hoffmann, Werner; Grass, Eckhard; Niendorf, Thoralf
    Thermal Magnetic Resonance (ThermalMR) leverages radio frequency (RF)-induced heating to examine the role of temperature in biological systems and disease. To advance RF heating with multi-channel RF antenna arrays and overcome the shortcomings of current RF signal sources, this work reports on a 32-channel modular signal generator (SGPLL). The SGPLL was designed around phase-locked loop (PLL) chips and a field-programmable gate array chip. To examine the system properties, switching/settling times, accuracy of RF power level and phase shifting were characterized. Electric field manipulation was successfully demonstrated in deionized water. RF heating was conducted in a phantom setup using self-grounded bow-tie RF antennae driven by the SGPLL. Commercial signal generators limited to a lower number of RF channels were used for comparison. RF heating was evaluated with numerical temperature simulations and experimentally validated with MR thermometry. Numerical temperature simulations and heating experiments controlled by the SGPLL revealed the same RF interference patterns. Upon RF heating similar temperature changes across the phantom were observed for the SGPLL and for the commercial devices. To conclude, this work presents the first 32-channel modular signal source for RF heating. The large number of coherent RF channels, wide frequency range and accurate phase shift provided by the SGPLL form a technological basis for ThermalMR controlled hyperthermia anti-cancer treatment. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
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    Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems
    (Basel : MDPI AG, 2021) Perez-Bosch Quesada, Emilio; Romero-Zaliz, Rocio; Perez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Reuben, John; Schubert, Markus Andreas; Jimenez-Molinos, Francisco; Roldan, Juan Bautista; Wenger, Christian
    In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.
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    Dielectrophoretic Immobilization of Yeast Cells Using CMOS Integrated Microfluidics
    (Basel : MDPI AG, 2020) Ettehad, Honeyeh Matbaechi; Soltani Zarrin, Pouya; Hölzel, Ralph; Wenger, Christian
    This paper presents a dielectrophoretic system for the immobilization and separation of live and dead cells. Dielectrophoresis (DEP) is a promising and efficient investigation technique for the development of novel lab-on-a-chip devices, which characterizes cells or particles based on their intrinsic and physical properties. Using this method, specific cells can be isolated from their medium carrier or the mixture of cell suspensions (e.g., separation of viable cells from non-viable cells). Main advantages of this method, which makes it favorable for disease (blood) analysis and diagnostic applications are, the preservation of the cell properties during measurements, label-free cell identification, and low set up cost. In this study, we validated the capability of complementary metal-oxide-semiconductor (CMOS) integrated microfluidic devices for the manipulation and characterization of live and dead yeast cells using dielectrophoretic forces. This approach successfully trapped live yeast cells and purified them from dead cells. Numerical simulations based on a two-layer model for yeast cells flowing in the channel were used to predict the trajectories of the cells with respect to their dielectric properties, varying excitation voltage, and frequency.
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    Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays
    (Basel : MDPI AG, 2020) Pérez, Eduardo; Ossorio, Óscar González; Dueñas, Salvador; Castán, Helena; García, Héctor; Wenger, Christian
    A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 μ s and 50 ns and assessed on Al-doped HfO 2 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programming pulse width implemented. Nevertheless, the distributions of voltages as well as the amount of energy required to carry out the switching operations were definitely affected by the value of the pulse width. In addition, the data retention was evaluated after the endurance analysis by annealing the RRAM devices at 150 °C along 100 h. Just an almost negligible increase on the rate of degradation of about 1 μ A at the end of the 100 h of annealing was reported between those samples programmed by employing a pulse width of 10 μ s and those employing 50 ns. Finally, an endurance performance of 200k cycles without any degradation was achieved on 128 RRAM devices by using programming pulses of 100 ns width.