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End date: 2024 × Start date: 2020 × Publisher: Washington, DC : Soc. × WGL Institute: FBH ×

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Now showing 1 - 4 of 4
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    Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
    (Washington, DC : Soc., 2022) Vissers, Ewoud; Poelman, Stijn; Wenzel, Hans; Christopher, Heike; Van Gasse, Kasper; Knigge, Andrea; Kuyken, Bart
    External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications. Additionally, optical injection locking is demonstrated, showing an improvement in the optical linewidth, and an increased stability of the comb spectrum.
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    Nanopatterned sapphire substrates in deep-UV LEDs : is there an optical benefit?
    (Washington, DC : Soc., 2020) Manley, Phillip; Walde, Sebastian; Hagedorn, Sylvia; Hammerschmidt, Martin; Burger, Sven; Becker, Christiane
    Light emitting diodes (LEDs) in the deep ultra-violet (DUV) offer new perspectives for multiple applications ranging from 3D printing to sterilization. However, insufficient light extraction severely limits their efficiency. Nanostructured sapphire substrates in aluminum nitride based LED devices have recently shown to improve crystal growth properties, while their impact on light extraction has not been fully verified. We present a model for understanding the impact of nanostructures on the light extraction capability of DUV-LEDs. The model assumes an isotropic light source in the semiconductor layer stack and combines rigorously computed scattering matrices with a multilayer solver. We find that the optical benefit of using a nanopatterned as opposed to a planar sapphire substrate to be negligible, if parasitic absorption in the p-side of the LED is dominant. If losses in the p-side are reduced to 20%, then for a wavelength of 265 nm an increase of light extraction efficiency from 7.8% to 25.0% is possible due to nanostructuring. We introduce a concept using a diffuse (’Lambertian’) reflector as p-contact, further increasing the light extraction efficiency to 34.2%. The results underline that transparent p-sides and reflective p-contacts in DUV-LEDs are indispensable for enhanced light extraction regardless of the interface texture between semiconductor and sapphire substrate. The optical design guidelines presented in this study will accelerate the development of high-efficiency DUV-LEDs. The model can be extended to other multilayer opto-electronic nanostructured devices such as photovoltaics or photodetectors. © 2020 OSA - The Optical Society. All rights reserved.
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    Wedged Nd:YVO4 crystal for wavelength tuning of monolithic passively Q-switched picosecond microchip lasers
    (Washington, DC : Soc., 2021) Marianovich, André; Spiekermann, Stefan; Brendel, Moritz; Wessels, Peter; Neumann, Jörg; Weyers, Markus; Kracht, Dietmar
    We present a monolithic integrated passively Q-switched sub-150 ps microchip laser at 1064 nm with a wedged Nd:YVO4 crystal operating up to a repetition rate of 1 MHz. The wedge enables to change the cavity length by a small amount to fine tune the spectral cavity mode position over the full gain bandwidth of Nd:YVO4 and hence to optimize the output power. This additional degree of freedom may be a suitable approach to increase the wafer scale mass production yield or also to simplify frequency tuning of CW single-frequency microchip lasers.
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    Spatially modulated broad-area lasers for narrow lateral far-field divergence
    (Washington, DC : Soc., 2021) Zeghuzi, Anissa; Koester, Jan-Philipp; Radziunas, Mindaugas; Christopher, Heike; Wenzel, Hans; Knigge, Andrea
    A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3° full width at half maximum (ΘFWHM=0.3∘) where a 0.4°-wide main lobe contains 40% of the emitted optical output power (Θ40%=0.4∘). While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central 1∘ angular range, the measured far-field intensity outside of the obtained central peak remains high.