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- ItemHigh temperature behavior of rual thin films on piezoelectric CTGS and LGS substrates(Basel : MDPI AG, 2020) Seifert, M.This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca3TaGa3Si2O14 (CTGS) and La3Ga5SiO14 (LGS) substrates. RuAl thin films with AlN or SiO2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In somefilms, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO2 barrier layer and up to 800 °C in air using a SiO2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.
- ItemPhase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates(Basel : MDPI AG, 2020) Seifert, M.; Lattner, E.; Menzel, S.B.; Oswald, S.; Gemming, T.Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.
- ItemTuning the magneto-optical response of TbPc2 single molecule magnets by the choice of the substrate(London [u.a.] : RSC, 2015) Robaschik, Peter; Fronk, Michael; Toader, Marius; Klyatskaya, Svetlana; Ganss, Fabian; Siles, Pablo F.; Schmidt, Oliver G.; Albrecht, Manfred; Hietschold, Michael; Ruben, Mario; Zahn, Dietrich R.T.; Salvan, GeorgetaIn this work, we investigated the magneto-optical response of thin films of TbPc2 on substrates which are relevant for (spin) organic field effect transistors (SiO2) or vertical spin valves (Co) in order to explore the possibility of implementing TbPc2 in magneto-electronic devices, the functionality of which includes optical reading. The optical and magneto-optical properties of TbPc2 thin films prepared by organic molecular beam deposition (OMBD) on silicon substrates covered with native oxide were investigated by variable angle spectroscopic ellipsometry (VASE) and magneto-optical Kerr effect (MOKE) spectroscopy at room temperature. The magneto-optical activity of the TbPc2 films can be significantly enhanced by one to two orders of magnitude upon changing the molecular orientation (from nearly standing molecules on SiO2/Si substrates to nearly lying molecules on perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) templated SiO2/Si substrates) or by using metallic ferromagnetic substrates (Co).
- ItemMagnetically induced reorientation of martensite variants in constrained epitaxial Ni-Mn-Ga films grown on MgO(001)(Milton Park : Taylor & Francis, 2008) Thomas, M.; Heczko, O.; Buschbeck, J.; Rößler, U.K.; McCord, J.; Scheerbaum, N.; Schultz, L.; Fähler, S.Magnetically induced reorientation (MIR) is observed in epitaxial orthorhombic Ni-Mn-Ga films. Ni-Mn-Ga films have been grown epitaxially on heated MgO(001) substrates in the cubic austenite state. The unit cell is rotated by 45° relative to the MgO cell. The growth, structure texture and anisotropic magnetic properties of these films are described. The crystallographic analysis of the martensitic transition reveals variant selection dominated by the substrate constraint. The austenite state has low magnetocrystalline anisotropy. In the martensitic state, the magnetization curves reveal an orthorhombic symmetry having three magnetically non-equivalent axes. The existence of MIR is deduced from the typical hysteresis within the first quadrant in magnetization curves and independently by texture measurement without and in the presence of a magnetic field probing micro structural changes. An analytical model is presented, which describes MIR in films with constrained overall extension by the additional degree of freedom of an orthorhombic structure compared to the tetragonal structure used in the standard model.
- ItemLifshitz transition in titanium carbide driven by a graphene overlayer(College Park, MD : APS, 2023) Krivenkov, M.; Marchenko, D.; Golias, E.; Sajedi, M.; Frolov, A.S.; Sánchez-Barriga, J.; Fedorov, A.; Yashina, L.V.; Rader, O.; Varykhalov, A.Two-dimensional (2D) Dirac materials are electronically and structurally very sensitive to proximity effects. We demonstrate, however, the opposite effect: that the deposition of a monolayer 2D material could exercise a substantial influence on the substrate electronic structure. Here we investigate TiC(111) and show that a graphene overlayer produces a proximity effect, changing the Fermi surface topology of the TiC from six electron pockets to one hole pocket on the depth of several atomic layers inside the substrate. In addition, the graphene electronic structure undergoes an extreme modification as well. While the Dirac cone remains gapless, it experiences an energy shift of 1.0 eV beyond what was recently achieved for the Lifshitz transition of overdoped graphene. Due to this shift, the antibonding π∗ band at the M¯ point becomes occupied and observable by photoemission.
- ItemInterplay of electric field and disorder in Dirac liquid silicene(Berlin ; Heidelberg : Springer, 2021) Craco, L.; Carara, S.S.; Leoni, S.Layered materials with buckled structure offer a promising route to explore distinct phases of quantum matter. Using GGA + DMFT we reveal the complex interplay between perpendicular electric field and site-diagonal disorder in the Dirac liquid electronic state of silicene. The electronic structure we derive is promising in the sense that it leads to results that might explain why out-of-plane electric field plus moderate disorder can generate marginal Dirac valleys consistent with scanning tunneling spectroscopy of silicene on Ag substrates.
- ItemSlowness curve surface acoustic wave transducers for optimized acoustic streaming(Cambridge : Royal Society of Chemistry, 2020) O'Rorke, R.; Winkler, A.; Collins, D.; Ai, Y.Surface acoustic waves can induce force gradients on the length scales of micro- and nanoparticles, allowing precise manipulation for particle capture, alignment and sorting activities. These waves typically occupy a spatial region much larger than a single particle, resulting in batch manipulation. Circular arc transducers can focus a SAW into a narrow beam on the order of the particle diameter for highly localised, single-particle manipulation by exciting wavelets which propagate to a common focal point. The anisotropic nature of SAW substrates, however, elongates and shifts the focal region. Acousto-microfluidic applications are highly dependent on the morphology of the underlying substrate displacement and, thus, become dependent on the microchannel position relative to the circular arc transducer. This requires either direct measurement or computational modelling of the SAW displacement field. We show that the directly measured elongation and shift in the focal region are recapitulated by an analytical model of beam steering, derived from a simulated slowness curve for 128° Y-cut lithium niobate. We show how the negative effects of beam steering can be negated by adjusting the curvature of arced transducers according to the slowness curve of the substrate, for which we present a simple function for convenient implementation in computational design software. Slowness-curve adjusted transducers do not require direct measurement of the SAW displacement field for microchannel placement and can capture smaller particles within the streaming vortices than can circular arc IDTs.