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    The equivalent circuit approach for the electrical diagnostics of dielectric barrier discharges: The classical theory and recent developments
    (Basel : MDPI AG, 2019) Pipa, Andrei V.; Brandenburg, Ronny
    Measurements of current and voltage are the basic diagnostics for electrical discharges. However, in the case of dielectric barrier discharges (DBDs), the measured current and voltage waveforms are influenced by the discharge reactor geometry, and thus, interpretation of measured quantities is required to determine the discharge properties. This contribution presents the main stages of the development of electrical diagnostics of DBDs, which are based on lumped electrical elements. The compilation and revision of the contributions to the equivalent circuit approach are targeted to indicate: (1) the interconnection between the stage of development, (2) its applicability, and (3) the current state-of-the-art of this approach. © 2019 by the authors.
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    Resonant terahertz light absorption by virtue of tunable hybrid interface phonon-plasmon modes in semiconductor nanoshells
    (Basel : MDPI AG, 2019) Nika, D.L.; Pokatilov, E.P.; Fomin, V.M.; Devreese, J.T.; Tempere, J.
    Metallic nanoshells have proven to be particularly versatile, with applications in biomedical imaging and surface-enhanced Raman spectroscopy. Here, we theoretically demonstrate that hybrid phonon-plasmon modes in semiconductor nanoshells offer similar advantages in the terahertz regime. We show that, depending on tm,n,nhe doping of the semiconductor shells, terahertz light absorption in these nanostructures can be resonantly enhanced due to the strong coupling between interface plasmons and phonons. A threefold to fourfold increase in the absorption peak intensity was achieved at specific values of electron concentration. Doping, as well as adapting the nanoshell radius, allowed for fine-tuning of the absorption peak frequencies.
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    Large-scale modeling of absorbing aerosols and their semi-direct effects
    (Basel : MDPI AG, 2018) Tegen, I.; Heinold, B.
    Radiative effects of absorbing black carbon and mineral dust aerosols are estimated from global aerosol climate model simulations with fixed sea surface temperatures as a boundary condition. Semi-direct effects are approximated as the residual between the total direct radiative effect and the instantaneous direct radiative effect of the simulated absorbing aerosol species. No distinction is made for aerosols from natural and anthropogenic sources. Results for global average are highly uncertain due to high model variability, but consistent with previous estimates. The global average results for black carbon aerosol semi-direct effects are small due to cancellation of regionally positive or negative effects, and may be positive or negative overall, depending on the model setup. The presence of mineral dust aerosol above dark surfaces and below a layer containing black carbon aerosol may enhance the reflectivity and act to enhance the positive radiative effect of black carbon aerosol. When mineral dust is absent the semi-direct effect at the top-of-atmosphere of black carbon aerosol from both anthropogenic and natural sources is -0.03 Wm-2, while averaging to +0.09 Wm-2 if dust is included.
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    Analysis of electronic properties frommagnetotransport measurements on Ba(Fe1-xNix)2As2 thin films
    (Basel : MDPI AG, 2020) Shipulin, I.; Richter, S.; Thomas, A.A.; Nielsch, K.; Hühne, R.; Martovitsky, V.
    We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.
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    High temperature behavior of rual thin films on piezoelectric CTGS and LGS substrates
    (Basel : MDPI AG, 2020) Seifert, M.
    This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca3TaGa3Si2O14 (CTGS) and La3Ga5SiO14 (LGS) substrates. RuAl thin films with AlN or SiO2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In somefilms, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO2 barrier layer and up to 800 °C in air using a SiO2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.
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    Phase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates
    (Basel : MDPI AG, 2020) Seifert, M.; Lattner, E.; Menzel, S.B.; Oswald, S.; Gemming, T.
    Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.
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    Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays
    (Basel : MDPI AG, 2020) Pérez, Eduardo; Ossorio, Óscar González; Dueñas, Salvador; Castán, Helena; García, Héctor; Wenger, Christian
    A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 μ s and 50 ns and assessed on Al-doped HfO 2 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programming pulse width implemented. Nevertheless, the distributions of voltages as well as the amount of energy required to carry out the switching operations were definitely affected by the value of the pulse width. In addition, the data retention was evaluated after the endurance analysis by annealing the RRAM devices at 150 °C along 100 h. Just an almost negligible increase on the rate of degradation of about 1 μ A at the end of the 100 h of annealing was reported between those samples programmed by employing a pulse width of 10 μ s and those employing 50 ns. Finally, an endurance performance of 200k cycles without any degradation was achieved on 128 RRAM devices by using programming pulses of 100 ns width.
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    Photostimulation of extravasation of beta-amyloid through the model of blood-brain barrier
    (Basel : MDPI AG, 2020) Zinchenko, Ekaterina; Klimova, Maria; Mamedova, Aysel; Agranovich, Ilana; Blokhina, Inna; Antonova, Tatiana; Terskov, Andrey; Shirokov, Alexander; Navolokin, Nikita; Morgun, Andrey; Osipova, Elena; Boytsova, Elizaveta; Yu, Tingting; Zhu, Dan; Kurths, Juergen; Semyachkina-Glushkovskaya, Oxana
    Alzheimer’s disease (AD) is an incurable pathology associated with progressive decline in memory and cognition. Phototherapy might be a new promising and alternative strategy for the effective treatment of AD, and has been actively discussed over two decades. However, the mechanisms of therapeutic photostimulation (PS) effects on subjects with AD remain poorly understood. The goal of this study was to determine the mechanisms of therapeutic PS effects in beta-amyloid (Aβ)-injected mice. The neurological severity score and the new object recognition tests demonstrate that PS 9 J/cm2 attenuates the memory and neurological deficit in mice with AD. The immunohistochemical assay revealed a decrease in the level of Aβ in the brain and an increase of Aβ in the deep cervical lymph nodes obtained from mice with AD after PS. Using the in vitro model of the blood-brain barrier (BBB), we show a PS-mediated decrease in transendothelial resistance and in the expression of tight junction proteins as well an increase in the BBB permeability to Aβ. These findings suggest that a PS-mediated BBB opening and the activation of the lymphatic clearance of Aβ from the brain might be a crucial mechanism underlying therapeutic effects of PS in mice with AD. These pioneering data open new strategies in the development of non-pharmacological methods for therapy of AD and contribute to a better understanding of the PS effects on the central nervous system. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
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    Two-step magnetization reversal FORC fingerprint of coupled bi-segmented Ni/Co magnetic nanowire arrays
    (Basel : MDPI AG, 2018) Fernández, J.G.; Martínez, V.V.; Thomas, A.; de la Prida Pidal, V.M.; Nielsch, K.
    First Order Reversal Curve (FORC) analysis has been established as an appropriate method to investigate the magnetic interactions among complex ferromagnetic nanostructures. In this work, the magnetization reversal mechanism of bi-segmented nanowires composed by long Co and Ni segments contacted at one side was investigated, as a model system to identify and understand the FORC fingerprint of a two-step magnetization reversal process. The resulting hysteresis loop of the bi-segmented nanowire array exhibits a completely different magnetic behavior than the one expected for the magnetization reversal process corresponding to each respective Co and Ni nanowire arrays, individually. Based on the FORC analysis, two possible magnetization reversal processes can be distinguished as a consequence of the ferromagnetic coupling at the interface between the Ni and Co segments. Depending on the relative difference between the magnetization switching fields of each segment, the softer magnetic phase induces the switching of the harder one through the injection and propagation of a magnetic domain wall when both switching fields are comparable. On the other hand, if the switching fields values differ enough, the antiparallel magnetic configuration of nanowires is also possible but energetically unfavorable, thus resulting in an unstable magnetic configuration. Making use of the different temperature dependence of the magnetic properties for each nanowire segment with different composition, one of the two types of magnetization reversal is favored, as demonstrated by FORC analyses.
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    Fe1-xNix alloy nanoparticles encapsulated inside carbon nanotubes: Controlled synthesis, structure and magnetic properties
    (Basel : MDPI AG, 2018) Ghunaim, R.; Damm, C.; Wolf, D.; Lubk, A.; Büchner, B.; Mertig, M.; Hampel, S.
    In the present work, different synthesis procedures have been demonstrated to fill carbon nanotubes (CNTs) with Fe1-xNix alloy nanoparticles (x = 0.33, 0.5). CNTs act as templates for the encapsulation of magnetic nanoparticles, and provide a protective shield against oxidation as well as prevent nanoparticles agglomeration. By variation of the reaction parameters, the purity of the samples, degree of filling, the composition and size of filling nanoparticles have been tailored and therefore the magnetic properties. The samples were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Bright-field (BF) TEM tomography, X-ray powder diffraction, superconducting quantum interference device (SQUID) and thermogravimetric analysis (TGA). The Fe1-x Nix-filled CNTs show a huge enhancement in the coercive fields compared to the corresponding bulk materials, which make them excellent candidates for several applications such as magnetic storage devices.