2017, Schumacher, P., Mayr, S.G., Rauschenbach, B.

Germanium thin films were deposited by Pulsed Laser Deposition (PLD) onto single crystal Ge (100) and Si (100) substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM) to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.

2014, Barone, C., Pagano, S., Bellingeri, E., Ferdeghini, C., Adamo, M., Sarnelli, E., Yokoyama, K., Kurth, F., Holzapfel, B, Iida, K.

The magnetic flux penetration into the melt-textured Y-Ba-Cu-O high temperature superconducting bulk magnets were precisely evaluated during and after the pulsed field magnetization processes operated at 30 K. The bulk magnets were carefully fabricated by the cold seeding method with use of a single and a pair of seed crystals composed of the Nd-Ba-Cu-O thin films. These seed crystals were put on the top surfaces of the precursors to let the large grains grow during the heat treatments. We observed the flux penetrations which occurred in the lower applied-field regions at around 3.1 T for the samples bearing the twin seeds than those of the single-seeded crystals at around 3.8 T. This means that the magnetic fluxes are capable of invading into the twin-seeded samples more easily than the single-seeds. It suggests that the anisotropic grain growths of parallel and normal to the rows of seed crystals affects the variations of Jc values with different distributions of the pinning centers, results in the preferential paths for the invading magnetic fluxes.

2008, Liu, X., De Morisson Faria, C.F., Becker, W.

A recollision-based largely classical statistical model of laser-induced nonsequential multiple (N-fold) ionization of atoms is further explored. Upon its return to the ionic core, the first-ionized electron interacts with the other N - 1 bound electrons either through a contact or a Coulomb interaction. The returning electron may leave either immediately after this interaction or join the other electrons to form a thermalized complex which leaves the ion after the delay Δt, which is the sum of a thermalization time and a possible additional dwell time. Good agreement with the available triple and quadruple ionization data in neon and argon is obtained with the contact scenario and delays of Δt = 0.17 T and 0.265 T, respectively, with T the laser period. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

2020, Shipulin, I., Richter, S., Thomas, A.A., Nielsch, K., Hühne, R., Martovitsky, V.

We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.

2019, Langer, Marco, Meyer, Sven, Ackermann, Kai, Grünewald, Lukas, Kauffmann-Weiss, Sandra, Aswartham, Saicharan, Wurmehl, Sabine, Hänisch, Jens, Holzapfel, Bernhard

The competition between phase formation of BaF2 and Ba(Fe1-xCox)2As2 on CaF2 single crystals has been analysed. Ba(Fe0.92Co0.08)2As2 thin films have been deposited by pulsed laser deposition. X-ray diffraction, atomic force microscopy and scanning electron microscopy studies have revealed that the formation of secondary phases and misorientations as well as the growth modes of the Ba(Fe0.92Co0.08)2As2 thin films strongly depend on the growth rate. At high growth rates, formation of BaF2 is suppressed. The dependency of the Ba(Fe0.92Co0.08)2As2 lattice parameters supports the idea of fluorine diffusion into the crystal structure upon suppression of BaF2 formation similar as was proposed for FeSe1-xTex thin films on CaF2. Furthermore, a growth mode transition from a layer growth mechanism to a three-dimensional growth mode at high supersaturation has been found, suggesting similarities between the growth mechanism of iron-based superconductors and high-T c cuprate thin films. © 2019 Published under licence by IOP Publishing Ltd.

2008, Pietzsch, A., Föhlisch, A., Beye, M., Deppe, M., Hennies, F., Nagasono, M., Suljotil, E., Wurth, W., Gahl, C., Dörich, K., Melnikov, A.

We have performed core level photoelectron spectroscopy on a W(110) single crystal with femtosecond XUV pulses from the free-electron laser at Hamburg (FLASH). We demonstrate experimentally and through theoretical modelling that for a suitable range of photon fluences per pulse, time-resolved photoemission experiments on solid surfaces are possible. Using FLASH pulses in combination with a synchronized optical laser, we have performed femtosecond time-resolved core-level photoelectron spectroscopy and observed sideband formation on the W 4f lines indicating a cross correlation between femtosecond optical and XUV pulses. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

2014, Sieger, M., Hänisch, J., Iida, K., Gaitzsch, U., Rodig, C., Schultz, L., Holzapfel, B., Hühne, R.

YBa2Cu3O7-δ (YBCO) films with a thickness of up to 3 μm containing nano-sized BaHfO3 (BHO) have been grown on Y2O3/Y-stabilized ZrO2/CeO 2 buffered Ni-9at% W tapes by pulsed laser deposition (PLD). Structural characterization by means of X-ray diffraction confirmed that the YBCO layer grew epitaxial. A superconducting transition temperature T c of about 89 K with a transition width of 1 K was determined, decreasing with increasing BHO content. Critical current density in self-field and at 0.3 T increased with increasing dopant level.

2008, Kling, M.F., Rauschenberger, J., Verhoef, A.J., Hasović, E., Uphues, T., Milošević, D.B., Muller, H.G., Vrakking, M.J.J.

Sub-femtosecond control of the electron emission in above-threshold ionization of the rare gases Ar, Xe and Kr in intense few-cycle laser fields is reported with full angular resolution. Experimental data that were obtained with the velocity-map imaging technique are compared to simulations using the strong-field approximation (SFA) and full time-dependent Schrödinger equation (TDSE) calculations. We find a pronounced asymmetry in both the energy and angular distributions of the electron emission that critically depends on the carrier-envelope phase (CEP) of the laser field. The potential use of imaging techniques as a tool for single-shot detection of the CEP is discussed. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

2008, Edler, Tobias, Buschbeck, Jörg, Mickel, Christine, Fähler, Sebastian, Mayr, S.G.

Mechanical stress generation during epitaxial growth of Fe–Pd thin films on MgO from pulsed laser deposition is a key parameter for the suitability in shape memory applications. By employing in situ substrate curvature measurements, we determine the stress states as a function of film thickness and composition. Depending on composition, different stress states are observed during initial film growth, which can be attributed to different misfits. Compressive stress generation by atomic peening is observed in the later stages of growth. Comparison with ex situ x-ray based strain measurements allows integral and local stress to be distinguished and yields heterogeneities of the stress state between coherent and incoherent regions. In combination with cross-sectional TEM measurements the relevant stress relaxation mechanism is identified to be stress-induced martensite formation with (111) twinning.