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Start date: 2010 × search.filters.applied.f.series: Scientific Reports 10 (2020) × Subject: Engineering ×

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    Dynamic Network Characteristics of Power-electronics-based Power Systems
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2020) Ji, Yuxi; He, Wei; Cheng, Shijie; Kurths, Jürgen; Zhan, Meng
    Power flow studies in traditional power systems aim to uncover the stationary relationship between voltage amplitude and phase and active and reactive powers; they are important for both stationary and dynamic power system analysis. With the increasing penetration of large-scale power electronics devices including renewable generations interfaced with converters, the power systems become gradually power-electronics-dominant and correspondingly their dynamical behavior changes substantially. Due to the fast dynamics of converters, such as AC current controller, the quasi-stationary state approximation, which has been widely used in power systems, is no longer appropriate and should be reexamined. In this paper, for a better description of network characteristics, we develop a novel concept of dynamic power flow and uncover an explicit dynamic relation between the instantaneous powers and the voltage vectors. This mathematical relation has been well verified by simulations on transient analysis of a small power-electronics-based power system, and a small-signal frequency-domain stability analysis of a voltage source converter connected to an infinitely strong bus. These results demonstrate the applicability of the proposed method and shed an improved light on our understanding of power-electronics-dominant power systems, whose dynamical nature remains obscure.
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    Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2020) Kilic, Ufuk; Mock, Alyssa; Sekora, Derek; Gilbert, Simeon; Valloppilly, Shah; Melendez, Giselle; Ianno, Natale; Langell, Marjorie; Schubert, Eva; Schubert, Mathias
    We find that a five-phase (substrate, mixed native oxide and roughness interface layer, metal oxide thin film layer, surface ligand layer, ambient) model with two-dynamic (metal oxide thin film layer thickness and surface ligand layer void fraction) parameters (dynamic dual box model) is sufficient to explain in-situ spectroscopic ellipsometry data measured within and across multiple cycles during plasma-enhanced atomic layer deposition of metal oxide thin films. We demonstrate our dynamic dual box model for analysis of in-situ spectroscopic ellipsometry data in the photon energy range of 0.7–3.4 eV measured with time resolution of few seconds over large numbers of cycles during the growth of titanium oxide (TiO2) and tungsten oxide (WO3) thin films, as examples. We observe cyclic surface roughening with fast kinetics and subsequent roughness reduction with slow kinetics, upon cyclic exposure to precursor materials, leading to oscillations of the metal thin film thickness with small but positive growth per cycle. We explain the cyclic surface roughening by precursor-surface interactions leading to defect creation, and subsequent surface restructuring. Atomic force microscopic images before and after growth, x-ray photoelectron spectroscopy, and x-ray diffraction investigations confirm structural and chemical properties of our thin films. Our proposed dynamic dual box model may be generally applicable to monitor and control metal oxide growth in atomic layer deposition, and we include data for SiO2 and Al2O3 as further examples.