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Start date: 2010 × WGL Institute: FBH × WGL Institute: MBI ×

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    The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication
    (Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2021) Deinhart, Victor; Kern, Lisa-Marie; Kirchhof, Jan N.; Juergensen, Sabrina; Sturm, Joris; Krauss, Enno; Feichtner, Thorsten; Kovalchuk, Sviatoslav; Schneider, Michael; Engel, Dieter; Pfau, Bastian; Hecht, Bert; Bolotin, Kirill I.; Reich, Stephanie; Höflich, Katja
    Focused beams of helium ions are a powerful tool for high-fidelity machining with spatial precision below 5 nm. Achieving such a high patterning precision over large areas and for different materials in a reproducible manner, however, is not trivial. Here, we introduce the Python toolbox FIB-o-mat for automated pattern creation and optimization, providing full flexibility to accomplish demanding patterning tasks. FIB-o-mat offers high-level pattern creation, enabling high-fidelity large-area patterning and systematic variations in geometry and raster settings. It also offers low-level beam path creation, providing full control over the beam movement and including sophisticated optimization tools. Three applications showcasing the potential of He ion beam nanofabrication for two-dimensional material systems and devices using FIB-o-mat are presented.
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    Temperature-Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
    (Weinheim : Wiley-VCH, 2020) Netzel, Carsten; Hoffmann, Veit; Tomm, Jens W.; Mahler, Felix; Einfeldt, Sven; Weyers, Markus
    Temperature-dependent transport of photoexcited charge carriers through a nominally undoped, c-plane GaN layer toward buried InGaN quantum wells is investigated by continuous-wave and time-resolved photoluminescence spectroscopy. The excitation of the buried InGaN quantum wells is dominated by charge carrier diffusion through the GaN layer; photon recycling contributes only slightly. With temperature decreasing from 310 to 10 K, the diffusion length in [0001⎯⎯] direction increases from 250 to 600 nm in the GaN layer. The diffusion length at 300 K also increases from 100 to 300 nm when increasing the excitation power density from 20 to 500 W cm−2. The diffusion constant decreases from the low-temperature value of ∼7 to 1.5 cm2 s−1 at 310 K. The temperature dependence of the diffusion constant indicates that the diffusivity at room temperature is limited by optical phonon scattering. Consequently, higher diffusion constants in GaN-based devices require a reduced operation temperature. To increase diffusion lengths at a fixed temperature, the effective recombination time has to be prolonged by reducing the number of nonradiative recombination centers.