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- ItemAnalysis of catalyst surface wetting: The early stage of epitaxial germanium nanowire growth(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2020) Ernst, Owen C.; Lange, Felix; Uebel, David; Teubner, Thomas; Boeck, TorstenThe dewetting process is crucial for several applications in nanotechnology. Even though not all dewetting phenomena are fully understood yet, especially regarding metallic fluids, it is clear that the formation of nanometre-sized particles, droplets, and clusters as well as their movement are strongly linked to their wetting behaviour. For this reason, the thermodynamic stability of thin metal layers (0.1-100 nm) with respect to their free energy is examined here. The decisive factor for the theoretical considerations is the interfacial energy. In order to achieve a better understanding of the interfacial interactions, three different models for estimating the interfacial energy are presented here: (i) fully theoretical, (ii) empirical, and (iii) semi-empirical models. The formation of nanometre-sized gold particles on silicon and silicon oxide substrates is investigated in detail. In addition, the strengths and weaknesses of the three models are elucidated, the different substrates used are compared, and the possibility to further process the obtained particles as nanocatalysts is verified. The importance of a persistent thin communication wetting layer between the particles and its effects on particle size and number is also clarified here. In particular, the intrinsic reduction of the Laplace pressure of the system due to material re-evaporation and Ostwald ripening describes the theoretically predicted and experimentally obtained results. Thus, dewetting phenomena of thin metal layers can be used to manufacture nanostructured devices. From this point of view, the application of gold droplets as catalysts to grow germanium nanowires on different substrates is described. © 2020 Ernst et al.
- ItemIn situ Raman spectroscopy on silicon nanowire anodes integrated in lithium ion batteries(Pennington, NJ : Electrochemical Society Inc., 2019) Krause, A.; Tkacheva, O.; Omar, A.; Langklotz, U.; Giebeler, L.; Dörfler, S.; Fauth, F.; Mikolajick, T.; Weber, W.M.Rapid decay of silicon anodes during lithiation poses a significant challenge in application of silicon as an anode material in lithium ion batteries. In situ Raman spectroscopy is a powerful method to study the relationship between structural and electrochemical data during electrode cycling and to allow the observation of amorphous as well as liquid and transient species in a battery cell. Herein, we present in situ Raman spectroscopy on high capacity electrode using uncoated and carbon-coated silicon nanowires during first lithiation and delithiation cycle in an optimized lithium ion battery setup and complement the results with operando X-ray reflection diffraction measurements. During lithiation, we were able to detect a new Raman signal at 1859 cm−1 especially on uncoated silicon nanowires. The detailed in situ Raman measurement of the first lithiation/delithiation cycle allowed to differentiate between morphology changes of the electrode as well as interphase formation from electrolyte components.
- ItemSurface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots(Bristol : IOP Publ., 2018) Lazić, S.; Chernysheva, E.; Hernández-Mínguez, A.; Santos, P.V.; van der Meulen, H.P.On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface acoustic waves (SAWs). The SAWs are excited on the surface of a piezoelectric lithium niobate crystal equipped with a SAW delay line onto which the NWs were mechanically transferred. Luminescent quantum dot (QD)-like exciton localization centers induced by compositional fluctuations within the InGaN nanoshell were identified using stroboscopic micro-photoluminescence (micro-PL) spectroscopy. They exhibit narrow and almost fully linearly polarized emission lines in the micro-PL spectra and a pronounced anti-bunching signature of single photon emission in the photon correlation experiments. When the nanowire is perturbed by the propagating SAW, the embedded QD is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling, giving rise to a spectral fine-tuning within a ~1.5 meV bandwidth at the acoustic frequency of ~330 MHz. This outcome can be further combined with spectral detection filtering for temporal control of the emitted photons. The effect of the SAW piezoelectric field on the QD charge population and on the optical polarization degree is also observed. The advantage of the acousto-optoelectric over other control schemes is that it allows in-situ manipulation of the optical emission properties over a wide frequency range (up to GHz frequencies).
- ItemWafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices(New York, NY : Inst., 2021) Knehr, Emanuel; Ziegler, Mario; Linzen, Sven; Ilin, Konstantin; Schanz, Patrick; Plentz, Jonathan; Diegel, Marco; Schmidt, Heidemarie; Il’iche, Evgeni; Siegel, MichaelSuperconducting niobium nitride thin films are used for a variety of photon detectors, quantum devices, and superconducting electronics. Most of these applications require highly uniform films, for instance, when moving from single-pixel detectors to arrays with a large active area. Plasma-enhanced atomic layer deposition (ALD) of superconducting niobium nitride is a feasible option to produce high-quality, conformal thin films and has been demonstrated as a film deposition method to fabricate superconducting nanowire single-photon detectors before. Here, we explore the property spread of ALD-NbN across a 6-in. wafer area. Over the equivalent area of a 2-in. wafer, we measure a maximum deviation of 1% in critical temperature and 12% in switching current. Toward larger areas, structural characterizations indicate that changes in the crystal structure seem to be the limiting factor rather than film composition or impurities. The results show that ALD is suited to fabricate NbN thin films as a material for large-area detector arrays and for new detector designs and devices requiring uniform superconducting thin films with precise thickness control.
- ItemInfluence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs(Basel : MDPI, 2021) Reszka, Anna; Korona, Krzysztof P.; Tiagulskyi, Stanislav; Turski, Henryk; Jahn, Uwe; Kret, Slawomir; Bożek, Rafał; Sobanska, Marta; Zytkiewicz, Zbigniew R.; Kowalski, Bogdan J.For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures.
- ItemOptically transparent vertical silicon nanowire arrays for live-cell imaging(London : Biomed Central, 2021) Elnathan, Roey; Holle, Andrew W.; Young, Jennifer; George, Marina; Heifler, Omri; Goychuk, Andriy; Frey, Erwin; Kemkemer, Ralf; Spatz, Joachim P.; Kosloff, Alon; Patolsky, Fernando; Voelcker, Nicolas H.Programmable nano-bio interfaces driven by tuneable vertically configured nanostructures have recently emerged as a powerful tool for cellular manipulations and interrogations. Such interfaces have strong potential for ground-break-ing advances, particularly in cellular nanobiotechnology and mechanobiology. However, the opaque nature of many nanostructured surfaces makes non-destructive, live-cell characterization of cellular behavior on vertically aligned nanostructures challenging to observe. Here, a new nanofabrication route is proposed that enables harvesting of vertically aligned silicon (Si) nanowires and their subsequent transfer onto an optically transparent substrate, with high efficiency and without artefacts. We demonstrate the potential of this route for efficient live-cell phase contrast imaging and subsequent characterization of cells growing on vertically aligned Si nanowires. This approach provides the first opportunity to understand dynamic cellular responses to a cell-nanowire interface, and thus has the potential to inform the design of future nanoscale cellular manipulation technologies.
- ItemX-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires(Copenhagen : Munksgaard, 2020) Davtyan, Arman; Kriegner, Dominik; Holý, Václav; AlHassan, Ali; Lewis, Ryan B.; McDermott, Spencer; Geelhaar, Lutz; Bahrami, Danial; Anjum, Taseer; Ren, Zhe; Richter, Carsten; Novikov, Dmitri; Müller, Julian; Butz, Benjamin; Pietsch, UllrichCore-shell nanowires (NWs) with asymmetric shells allow for strain engineering of NW properties because of the bending resulting from the lattice mismatch between core and shell material. The bending of NWs can be readily observed by electron microscopy. Using X-ray diffraction analysis with a micro- and nano-focused beam, the bending radii found by the microscopic investigations are confirmed and the strain in the NW core is analyzed. For that purpose, a kinematical diffraction theory for highly bent crystals is developed. The homogeneity of the bending and strain is studied along the growth axis of the NWs, and it is found that the lower parts, i.e. close to the substrate/wire interface, are bent less than the parts further up. Extreme bending radii down to ∼3 μm resulting in strain variation of ∼2.5% in the NW core are found. © 2020.
- ItemPTFEP-Al2O3 hybrid nanowires reducing thrombosis and biofouling(Cambridge : Royal Society of Chemistry, 2019) Haidar, Ayman; Ali, Awadelkareem A.; Veziroglu, Salih; Fiutowski, Jacek; Eichler, Hermann; Müller, Isabelle; Kiefer, Karin; Faupel, Franz; Bischoff, Markus; Veith, Michael; Aktas, Oral Cenk; Abdul-Khaliq, HashimThrombosis and bacterial infection are major problems in cardiovascular implants. Here we demonstrated that a superhydrophobic surface composed of poly(bis(2,2,2-trifluoroethoxy)phosphazene) (PTFEP)-Al2O3 hybrid nanowires (NWs) is effective to reduce both platelet adhesion/activation and bacterial adherence/colonization. The proposed approach allows surface modification of cardiovascular implants which have 3D complex geometries. © 2019 The Royal Society of Chemistry.
- ItemSemimetal to semiconductor transition in Bi/TiO2 core/shell nanowires(Cambridge : Royal Society of Chemistry, 2021) Kockert, M.; Mitdank, R.; Moon, H.; Kim, J.; Mogilatenko, A.; Moosavi, S.H.; Kroener, M.; Woias, P.; Lee, W.; Fischer, S.F.We demonstrate the full thermoelectric and structural characterization of individual bismuth-based (Bi-based) core/shell nanowires. The influence of strain on the temperature dependence of the electrical conductivity, the absolute Seebeck coefficient and the thermal conductivity of bismuth/titanium dioxide (Bi/TiO2) nanowires with different diameters is investigated and compared to bismuth (Bi) and bismuth/tellurium (Bi/Te) nanowires and bismuth bulk. Scattering at surfaces, crystal defects and interfaces between the core and the shell reduces the electrical conductivity to less than 5% and the thermal conductivity to less than 25% to 50% of the bulk value at room temperature. On behalf of a compressive strain, Bi/TiO2 core/shell nanowires show a decreasing electrical conductivity with decreasing temperature opposed to that of Bi and Bi/Te nanowires. We find that the compressive strain induced by the TiO2 shell can lead to a band opening of bismuth increasing the absolute Seebeck coefficient by 10% to 30% compared to bulk at room temperature. In the semiconducting state, the activation energy is determined to |41.3 ± 0.2| meV. We show that if the strain exceeds the elastic limit the semimetallic state is recovered due to the lattice relaxation.
- ItemCorrection: Electrochemically deposited nanocrystalline InSb thin films and their electrical properties (Journal of Materials Chemistry C (2016) 4 (1345-1350) DOI: 10.1039/C5TC03656A)(London : RSC Publ., 2019) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.There was an error in eqn (3) which was reproduced from the literature and used for the interpretation of the results. The calculations (using the equations from an original work from 1987) were done according the correct version of eqn (3) presented below:. (Table Presented). © 2019 The Royal Society of Chemistry.
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