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Now showing 1 - 10 of 10
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    Giant stress response of terahertz magnons in a spin-orbit Mott insulator
    ([London] : Nature Publishing Group UK, 2022) Kim, Hun-Ho; Ueda, Kentaro; Nakata, Suguru; Wochner, Peter; Mackenzie, Andrew; Hicks, Clifford; Khaliullin, Giniyat; Liu, Huimei; Keimer, Bernhard; Minola, Matteo
    Magnonic devices operating at terahertz frequencies offer intriguing prospects for high-speed electronics with minimal energy dissipation However, guiding and manipulating terahertz magnons via external parameters present formidable challenges. Here we report the results of magnetic Raman scattering experiments on the antiferromagnetic spin-orbit Mott insulator Sr2IrO4 under uniaxial stress. We find that the energies of zone-center magnons are extremely stress sensitive: lattice strain of 0.1% increases the magnon energy by 40%. The magnon response is symmetric with respect to the sign of the applied stress (tensile or compressive), but depends strongly on its direction in the IrO2 planes. A theory based on coupling of the spin-orbit-entangled iridium magnetic moments to lattice distortions provides a quantitative explanation of the Raman data and a comprehensive framework for the description of magnon-lattice interactions in magnets with strong spin-orbit coupling. The possibility to efficiently manipulate the propagation of terahertz magnons via external stress opens up multifold design options for reconfigurable magnonic devices.
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    Signatures of a magnetic-field-induced Lifshitz transition in the ultra-quantum limit of the topological semimetal ZrTe5
    ([London] : Nature Publishing Group UK, 2022) Galeski, S.; Legg, H.F.; Wawrzyńczak, R.; Förster, T.; Zherlitsyn, S.; Gorbunov, D.; Uhlarz, M.; Lozano, P.M.; Li, Q.; Gu, G.D.; Felser, C.; Wosnitza, J.; Meng, T.; Gooth, J.
    The quantum limit (QL) of an electron liquid, realised at strong magnetic fields, has long been proposed to host a wealth of strongly correlated states of matter. Electronic states in the QL are, for example, quasi-one dimensional (1D), which implies perfectly nested Fermi surfaces prone to instabilities. Whereas the QL typically requires unreachably strong magnetic fields, the topological semimetal ZrTe5 has been shown to reach the QL at fields of only a few Tesla. Here, we characterize the QL of ZrTe5 at fields up to 64 T by a combination of electrical-transport and ultrasound measurements. We find that the Zeeman effect in ZrTe5 enables an efficient tuning of the 1D Landau band structure with magnetic field. This results in a Lifshitz transition to a 1D Weyl regime in which perfect charge neutrality can be achieved. Since no instability-driven phase transitions destabilise the 1D electron liquid for the investigated field strengths and temperatures, our analysis establishes ZrTe5 as a thoroughly understood platform for potentially inducing more exotic interaction-driven phases at lower temperatures.
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    Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films
    ([London] : Nature Publishing Group UK, 2022) Li, Zhan Hua; He, Jia Xing; Lv, Xiao Hu; Chi, Ling Fei; Egbo, Kingsley O.; Li, Ming-De; Tanaka, Tooru; Guo, Qi Xin; Yu, Kin Man; Liu, Chao Ping
    As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.
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    Intercomparison of regional loss estimates from global synthetic tropical cyclone models
    ([London] : Nature Publishing Group UK, 2022) Meiler, Simona; Vogt, Thomas; Bloemendaal, Nadia; Ciullo, Alessio; Lee, Chia-Ying; Camargo, Suzana J.; Emanuel, Kerry; Bresch, David N.
    Tropical cyclones (TCs) cause devastating damage to life and property. Historical TC data is scarce, complicating adequate TC risk assessments. Synthetic TC models are specifically designed to overcome this scarcity. While these models have been evaluated on their ability to simulate TC activity, no study to date has focused on model performance and applicability in TC risk assessments. This study performs the intercomparison of four different global-scale synthetic TC datasets in the impact space, comparing impact return period curves, probability of rare events, and hazard intensity distribution over land. We find that the model choice influences the costliest events, particularly in basins with limited TC activity. Modelled direct economic damages in the North Indian Ocean, for instance, range from 40 to 246 billion USD for the 100-yr event over the four hazard sets. We furthermore provide guidelines for the suitability of the different synthetic models for various research purposes.
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    On-chip generation and dynamic piezo-optomechanical rotation of single photons
    ([London] : Nature Publishing Group UK, 2022) Bühler, Dominik D.; Weiß, Matthias; Crespo-Poveda, Antonio; Nysten, Emeline D. S.; Finley, Jonathan J.; Müller, Kai; Santos, Paulo V.; de Lima Jr., Mauricio M.; Krenner, Hubert J.
    Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors.
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    Metamaterial-enabled asymmetric negative refraction of GHz mechanical waves
    ([London] : Nature Publishing Group UK, 2022) Zanotto, Simone; Biasiol, Giorgio; Santos, Paulo V.; Pitanti, Alessandro
    Wave refraction at an interface between different materials is a basic yet fundamental phenomenon, transversal to several scientific realms – electromagnetism, gas and fluid acoustics, solid mechanics, and possibly also matter waves. Under specific circumstances, mostly enabled by structuration below the wavelength scale, i.e., through the metamaterial approach, waves undergo negative refraction, eventually enabling superlensing and transformation optics. However, presently known negative refraction systems are symmetric, in that they cannot distinguish between positive and negative angles of incidence. Exploiting a metamaterial with an asymmetric unit cell, we demonstrate that the aforementioned symmetry can be broken, ultimately relying on the specific shape of the Bloch mode isofrequency curves. Our study specialized upon a mechanical metamaterial operating at GHz frequency, which is by itself a building block for advanced technologies such as chip-scale hybrid optomechanical and electromechanical devices. However, the phenomenon is based on general wave theory concepts, and it applies to any frequency and time scale for any kind of linear waves, provided that a suitable shaping of the isofrequency contours is implemented.
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    Overcoming global inequality is critical for land-based mitigation in line with the Paris Agreement
    ([London] : Nature Publishing Group UK, 2022) Humpenöder, Florian; Popp, Alexander; Schleussner, Carl-Friedrich; Orlov, Anton; Windisch, Michael Gregory; Menke, Inga; Pongratz, Julia; Havermann, Felix; Thiery, Wim; Luo, Fei; v. Jeetze, Patrick; Dietrich, Jan Philipp; Lotze-Campen, Hermann; Weindl, Isabelle; Lejeune, Quentin
    Transformation pathways for the land sector in line with the Paris Agreement depend on the assumption of globally implemented greenhouse gas (GHG) emission pricing, and in some cases also on inclusive socio-economic development and sustainable land-use practices. In such pathways, the majority of GHG emission reductions in the land system is expected to come from low- and middle-income countries, which currently account for a large share of emissions from agriculture, forestry and other land use (AFOLU). However, in low- and middle-income countries the economic, financial and institutional barriers for such transformative changes are high. Here, we show that if sustainable development in the land sector remained highly unequal and limited to high-income countries only, global AFOLU emissions would remain substantial throughout the 21st century. Our model-based projections highlight that overcoming global inequality is critical for land-based mitigation in line with the Paris Agreement. While also a scenario purely based on either global GHG emission pricing or on inclusive socio-economic development would achieve the stringent emissions reductions required, only the latter ensures major co-benefits for other Sustainable Development Goals, especially in low- and middle-income regions.
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    Low atmospheric CO2 levels before the rise of forested ecosystems
    ([London] : Nature Publishing Group UK, 2022) Dahl, Tais W.; Harding, Magnus A. R.; Brugger, Julia; Feulner, Georg; Norrman, Kion; Lomax, Barry H.; Junium, Christopher K.
    The emergence of forests on Earth (~385 million years ago, Ma)1 has been linked to an order-of-magnitude decline in atmospheric CO2 levels and global climatic cooling by altering continental weathering processes, but observational constraints on atmospheric CO2 before the rise of forests carry large, often unbound, uncertainties. Here, we calibrate a mechanistic model for gas exchange in modern lycophytes and constrain atmospheric CO2 levels 410–380 Ma from related fossilized plants with bound uncertainties of approximately ±100 ppm (1 sd). We find that the atmosphere contained ~525–715 ppm CO2 before continents were afforested, and that Earth was partially glaciated according to a palaeoclimate model. A process-driven biogeochemical model (COPSE) shows the appearance of trees with deep roots did not dramatically enhance atmospheric CO2 removal. Rather, shallow-rooted vascular ecosystems could have simultaneously caused abrupt atmospheric oxygenation and climatic cooling long before the rise of forests, although earlier CO2 levels are still unknown.
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    Wafer-scale nanofabrication of telecom single-photon emitters in silicon
    ([London] : Nature Publishing Group UK, 2022) Hollenbach, Michael; Klingner, Nico; Jagtap, Nagesh S.; Bischoff, Lothar; Fowley, Ciarán; Kentsch, Ulrich; Hlawacek, Gregor; Erbe, Artur; Abrosimov, Nikolay V.; Helm, Manfred; Berencén, Yonder; Astakhov, Georgy V.
    A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
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    Flexomagnetism and vertically graded Néel temperature of antiferromagnetic Cr2O3 thin films
    ([London] : Nature Publishing Group UK, 2022) Makushko, Pavlo; Kosub, Tobias; Pylypovskyi, Oleksandr V.; Hedrich, Natascha; Li, Jiang; Pashkin, Alexej; Avdoshenko, Stanislav; Hübner, René; Ganss, Fabian; Wolf, Daniel; Lubk, Axel; Liedke, Maciej Oskar; Butterling, Maik; Wagner, Andreas; Wagner, Kai; Shields, Brendan J.; Lehmann, Paul; Veremchuk, Igor; Fassbender, Jürgen; Maletinsky, Patrick; Makarov, Denys
    Antiferromagnetic insulators are a prospective materials platform for magnonics, spin superfluidity, THz spintronics, and non-volatile data storage. A magnetomechanical coupling in antiferromagnets offers vast advantages in the control and manipulation of the primary order parameter yet remains largely unexplored. Here, we discover a new member in the family of flexoeffects in thin films of Cr2O3. We demonstrate that a gradient of mechanical strain can impact the magnetic phase transition resulting in the distribution of the Néel temperature along the thickness of a 50-nm-thick film. The inhomogeneous reduction of the antiferromagnetic order parameter induces a flexomagnetic coefficient of about 15 μB nm−2. The antiferromagnetic ordering in the inhomogeneously strained films can persist up to 100 °C, rendering Cr2O3 relevant for industrial electronics applications. Strain gradient in Cr2O3 thin films enables fundamental research on magnetomechanics and thermodynamics of antiferromagnetic solitons, spin waves and artificial spin ice systems in magnetic materials with continuously graded parameters.