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DDC: 500 × Subject: stochastic model ×

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Now showing 1 - 3 of 3
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    A statistically predictive model for future monsoon failure in India
    (Bristol : IOP Publishing, 2012) Schewe, Jacob; Levermann, Anders
    Indian monsoon rainfall is vital for a large share of the world's population. Both reliably projecting India's future precipitation and unraveling abrupt cessations of monsoon rainfall found in paleorecords require improved understanding of its stability properties. While details of monsoon circulations and the associated rainfall are complex, full-season failure is dominated by large-scale positive feedbacks within the region. Here we find that in a comprehensive climate model, monsoon failure is possible but very rare under pre-industrial conditions, while under future warming it becomes much more frequent. We identify the fundamental intraseasonal feedbacks that are responsible for monsoon failure in the climate model, relate these to observational data, and build a statistically predictive model for such failure. This model provides a simple dynamical explanation for future changes in the frequency distribution of seasonal mean all-Indian rainfall. Forced only by global mean temperature and the strength of the Pacific Walker circulation in spring, it reproduces the trend as well as the multidecadal variability in the mean and skewness of the distribution, as found in the climate model. The approach offers an alternative perspective on large-scale monsoon variability as the result of internal instabilities modulated by pre-seasonal ambient climate conditions.
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    Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2020) Zahari, Finn; Pérez, Eduardo; Mahadevaiah, Mamathamba Kalishettyhalli; Kohlstedt, Hermann; Wenger, Christian; Ziegler, Martin
    Biological neural networks outperform current computer technology in terms of power consumption and computing speed while performing associative tasks, such as pattern recognition. The analogue and massive parallel in-memory computing in biology differs strongly from conventional transistor electronics that rely on the von Neumann architecture. Therefore, novel bio-inspired computing architectures have been attracting a lot of attention in the field of neuromorphic computing. Here, memristive devices, which serve as non-volatile resistive memory, are employed to emulate the plastic behaviour of biological synapses. In particular, CMOS integrated resistive random access memory (RRAM) devices are promising candidates to extend conventional CMOS technology to neuromorphic systems. However, dealing with the inherent stochasticity of resistive switching can be challenging for network performance. In this work, the probabilistic switching is exploited to emulate stochastic plasticity with fully CMOS integrated binary RRAM devices. Two different RRAM technologies with different device variabilities are investigated in detail, and their potential applications in stochastic artificial neural networks (StochANNs) capable of solving MNIST pattern recognition tasks is examined. A mixed-signal implementation with hardware synapses and software neurons combined with numerical simulations shows that the proposed concept of stochastic computing is able to process analogue data with binary memory cells. © 2020, The Author(s).
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    Physics inspired compact modelling of BiFeO3 based memristors
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2022) Yarragolla, Sahitya; Du, Nan; Hemke, Torben; Zhao, Xianyue; Chen, Ziang; Polian, Ilia; Mussenbrock, Thomas
    With the advent of the Internet of Things, nanoelectronic devices or memristors have been the subject of significant interest for use as new hardware security primitives. Among the several available memristors, BiFeO3 (BFO)-based electroforming-free memristors have attracted considerable attention due to their excellent properties, such as long retention time, self-rectification, intrinsic stochasticity, and fast switching. They have been actively investigated for use in physical unclonable function (PUF) key storage modules, artificial synapses in neural networks, nonvolatile resistive switches, and reconfigurable logic applications. In this work, we present a physics-inspired 1D compact model of a BFO memristor to understand its implementation for such applications (mainly PUFs) and perform circuit simulations. The resistive switching based on electric field-driven vacancy migration and intrinsic stochastic behaviour of the BFO memristor are modelled using the cloud-in-a-cell scheme. The experimental current–voltage characteristics of the BFO memristor are successfully reproduced. The response of the BFO memristor to changes in electrical properties, environmental properties (such as temperature) and stress are analyzed and consistant with experimental results.