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DDC: 510 × Subject: nonlinear diffusion ×

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Now showing 1 - 3 of 3
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    Comparison of thermodynamically consistent charge carrier flux discretizations for Fermi-Dirac and Gauss-Fermi statistics
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Farrell, Patricio; Patriarca, Matteo; Fuhrmann, Jürgen; Koprucki, Thomas
    We compare three thermodynamically consistent ScharfetterGummel schemes for different distribution functions for the carrier densities, including the FermiDirac integral of order 1/2 and the GaussFermi integral. The most accurate (but unfortunately also most costly) generalized ScharfetterGummel scheme requires the solution of an integral equation. We propose a new method to solve this integral equation numerically based on Gauss quadrature and Newtons method. We discuss the quality of this approximation and plot the resulting currents for FermiDirac and GaussFermi statistics. Finally, by comparing two modified (diffusion-enhanced and inverse activity based) ScharfetterGummel schemes with the more accurate generalized scheme, we show that the diffusion-enhanced ansatz leads to considerably lower flux errors, confirming previous results (J. Comp. Phys. 346:497-513, 2017).
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    Challenges for drift-diffusion simulations of semiconductors: A comparative study of different discretization philosophies
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Farrell, Patricio; Peschka, Dirk
    We analyze and benchmark the error and the convergence order of finite difference, finite-element as well as Voronoi finite-volume discretization schemes for the drift-diffusion equations describing charge transport in bulk semiconductor devices. Three common challenges, that can corrupt the precision of numerical solutions, will be discussed: boundary layers at Ohmic contacts, discontinuties in the doping profile, and corner singularities in L-shaped domains. The influence on the order of convergence is assessed for each computational challenge and the different discretization schemes. Additionally, we provide an analysis of the inner boundary layer asymptotics near Ohmic contacts to support our observations.
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    Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Farrell, Patricio; Koprucki, Thomas; Fuhrmann, Jürgen
    For a Voronoi finite volume discretization of the van Roosbroeck system with general charge carrier statistics we compare three thermodynamically consistent numerical fluxes known in the literature. We discuss an extension of the Scharfetter-Gummel scheme to non-Boltzmann (e.g. Fermi-Dirac) statistics. It is based on the analytical solution of a two-point boundary value problem obtained by projecting the continuous differential equation onto the interval between neighboring collocation points. Hence, it serves as a reference flux. The exact solution of the boundary value problem can be approximated by computationally cheaper fluxes which modify certain physical quantities. One alternative scheme averages the nonlinear diffusion (caused by the non-Boltzmann nature of the problem), another one modifies the effective density of states. To study the differences between these three schemes, we analyze the Taylor expansions, derive an error estimate, visualize the flux error and show how the schemes perform for a carefully designed p-i-n benchmark simulation. We present strong evidence that the flux discretization based on averaging the nonlinear diffusion has an edge over the scheme based on modifying the effective density of states.