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Low-power emerging memristive designs towards secure hardware systems for applications in internet of things
Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and in-memory computing (IMC), but there is a rising interest in using memristive technologies for security applications in the era of internet of things (IoT). In this review article, for achieving secure hardware systems in IoT, low-power design techniques based on emerging memristive technology for hardware security primitives/systems are presented. By reviewing the state-of-the-art in three highlighted memristive application areas, i.e. memristive non-volatile memory, memristive reconfigurable logic computing and memristive artificial intelligent computing, their application-level impacts on the novel implementations of secret key generation, crypto functions and machine learning attacks are explored, respectively. For the low-power security applications in IoT, it is essential to understand how to best realize cryptographic circuitry using memristive circuitries, and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their security. This review article aims to help researchers to explore security solutions, to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.
Synchrotron studies of top-down grown silicon nanowires
Morphology of the top-down grown silicon nanowires obtained by metal-assisted wet-chemical approach on silicon substrates with different resistance were studied by scanning electron microscopy. Obtained arrays of compact grown Si nanowires were a subject for the high resolution electronic structures studies by X-ray absorption near edge structure technique performed with the usage of high intensity synchrotron radiation of the SRC storage ring of the University of Wisconsin-Madison. The different oxidation rates were found by investigation of silicon atoms local surrounding specificity of the highly developed surface and near surface layer that is not exceeded 70 nm. Flexibility of the wires arrays surface morphology and its composition is demonstrated allowing smoothly form necessary surface oxidation rate and using Si nanowires as a useful matrixes for a wide range of further functionalization.
Scalable, high power line focus diode laser for crystallizing of silicon thin films
We present the design and performance of a diode laser module producing a high intensity line focus at 808 nm for material processing. The design is based on a linear array of 7 laser bars and beam forming optics featuring a micro-optic homogenizer. The module delivers a total output power of 900 W at 140 A and peak intensity created in the focus area of 10.3 kW/cm2. Two systems with line length of 5 cm and 10 cm at a large working distance of 110 mm have been realized. The chosen concept allows scaling in length by joining multiple modules which is of interest for material processing in industrial applications. Application results from laser crystallization of amorphous silicon seed layers used in the fabrication of photovoltaic cells for solar panels are given.
(INVITED)Tm:YAG crystal-derived double-clad fibers – A hybrid approach towards high gain and high efficiency Tm lasers
The hybrid approach of combining a Tm:YAG laser crystal with an amorphous fused silica tube is investigated to evaluate the suitability of the resulting crystal-derived fibers for efficient double-clad fiber lasers. The fabrication process and fiber properties of these Tm fibers are investigated, focusing on the dependence of the active fiber properties on the incorporated Tm3+ concentration. Crystal rods with different doping concentrations (TmxY1-x)3Al5O12 (x = 0.02, 0.05 and 0.08) were used as starting core material for fiber drawing. The investigated fibers are mechanically stable and result in a fairly homogenous and amorphous core glass with optical absorption and emission spectra that are similar to conventional Tm:Al doped silica fibers. Regarding laser properties with 790 nm cladding pumping, we could achieve a maximum slope efficiency of 47% with an output power of 4 W. The fiber laser results are compared to a conventionally fabricated double-clad Tm fiber prepared by Modified Chemical Vapor Deposition and solution doping. To the best of our knowledge, we demonstrate the highest laser output and the highest efficiency obtained from a Tm:YAG crystal-derived fiber.
XPS investigations of MOCVD tin oxide thin layers on Si nanowires array
Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers. The composition of the formed layers were studied by high-resolution X-ray photoelectron spectroscopy of tin (Sn 3d) and oxygen (O 1 s) atoms core levels. The ion beam etching was applied to study the layers depth composition profiles. The composition studies of grown tin oxide layers is shown that the surface of layers contains tin dioxide, but the deeper part contains intermediate tin dioxide and metallic tin phases.