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DDC: 530 × Type: article × Version: publishedVersion × search.filters.applied.f.series: Nature Communications 9 (2018), Nr. 1 × Sponsor: Leibniz_Fonds × Subject: electric field ×

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    Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics
    (London : Nature Publishing Group, 2018) Yuan, X.; Weyhausen-Brinkmann, F.; Martín-Sánchez, J.; Piredda, G.; Křápek, V.; Huo, Y.; Huang, H.; Schimpf, C.; Schmidt, O.G.; Edlinger, J.; Bester, G.; Trotta, R.; Rastelli, A.
    The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in-plane uniaxial stress. By using piezoelectric strain-actuators featuring strain amplification, we study the evolution of the selection rules and excitonic fine structure in a regime, in which quantum confinement can be regarded as a perturbation compared to strain in determining the symmetry-properties of the system. The experimental and computational results suggest that uniaxial stress may be the right tool to obtain quantum-light sources with ideally oriented transition dipoles and enhanced oscillator strengths for integrated quantum photonics.
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    Symmetry regimes for circular photocurrents in monolayer MoSe2
    (London : Nature Publishing Group, 2018) Quereda, J.; Ghiasi, T.S.; You, J.-S.; van den Brink, J.; van Wees, B.J.; van der Wal, C.H.
    In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPCs) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characteristics of CPC from excitonic interband transitions in a MoSe2 monolayer. The dependence on bias and gate voltages reveals two different CPC contributions, dominant at different voltages and with different dependence on illumination wavelength and incidence angles. We theoretically analyze symmetry requirements for effects that can yield CPC and compare these with the observed angular dependence and symmetries that occur for our device geometry. This reveals that the observed CPC effects require a reduced device symmetry, and that effects due to Berry curvature of the electronic states do not give a significant contribution.