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DDC: 530 × Publisher: [Melville, NY] : American Institute of Physics ×

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    Perspectives on MOVPE-grown (100) β-Ga2O3thin films and its Al-alloy for power electronics application
    ([Melville, NY] : American Institute of Physics, 2022) Rehm, Jana; Chou, Ta-Shun; Bin Anooz, Saud; Seyidov, Palvan; Fiedler, Andreas; Galazka, Zbigniew; Popp, Andreas
    Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency electronics, and solar-blind ultraviolet radiation detectors. Here, we present an overview and perspective on the development of MOVPE-grown (100) β-Ga2O3 thin films and its role in supplementing high-power electronics. We review the development path of the growth process on (100) β-Ga2O3 thin films with a discussion regarding the solved and remaining challenges. The structural defect formation mechanism, substrate treatment strategies, and different growth windows are analyzed to optimize the grown film to fulfill the requirements for device fabrication. Toward industrial applications, MOVPE-grown β-Ga2O3 thin films are evaluated in two aspects: thick layers with smooth surface roughness and the electrical properties in terms of high carrier mobility and low doping concentration. Based on the reviewed results, we propose strategies in substrate preparation treatments and supportive tools such as the machine learning approaches for future growth process optimization and envision the rising interest of the β-Ga2O3-related alloy, β-(AlxGa1-x)2O3.
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    Evidence of the dominant production mechanism of ammonia in a hydrogen plasma with parts per million of nitrogen
    ([Melville, NY] : American Institute of Physics, 2021) Ellis, J.; Köpp, D.; Lang, N.; van Helden, J. H.
    Absolute ground state atomic hydrogen densities were measured, by the utilization of two-photon absorption laser induced fluorescence, in a low-pressure electron cyclotron resonance plasma as a function of nitrogen admixtures - 0 to 5000 ppm. At nitrogen admixtures of 1500 ppm and higher, the spectral distribution of the fluorescence changes from a single Gaussian to a double Gaussian distribution; this is due to a separate, nascent contribution arising from the photolysis of an ammonia molecule. At nitrogen admixtures of 5000 ppm, the nascent contribution becomes the dominant contribution at all investigated pressures. Thermal loading experiments were conducted by heating the chamber walls to different temperatures; this showed a decrease in the nascent contributions with increasing temperature. This is explained by considering how the temperature influences recombination coefficients, and from which, it can be stated that the Langmuir-Hinshelwood recombination mechanism is dominant over the Eley-Rideal mechanism.