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Hydrophobic multiscale cavities for high-performance and self-cleaning surface-enhanced Raman spectroscopy (SERS) sensing

2020, Zhao, Xiaofei, Liu, Chundong, Yu, Jing, Liu, Lu, Li, Chonghui, Xu, Shicai, Li, Weifeng, Man, Baoyuan, Zhang, Chao

Cavity array, with excellent optical capture capability, has received increasing attention for the surface-enhanced Raman spectroscopy (SERS)-active substrates. Here, we proposed molybdenum disulfide (MoS2) nanocavities growing on pyramid Si (PSi) composed of in situ reduced Au nanoparticles (AuNPs), which can form the multiscale cavities (MSCs), and is facile for the couple of the plasmon. We demonstrated that the PSi/MoS2/Au MSCs can serve as highly sensitive, uniform, and stable SERS substrates for rhodamine 6G (R6G), crystal violet, and adenosine triphosphate detection, benefiting from the synergistic effect of the enhanced light trapping and the effective plasmonic couple. The couple of the plasmon in the MSCs is evidently proved by finite-difference time domain simulation, showing the strong electromagnetic field is located around the cavity wall. Moreover, the excellent hydrophobicity of the PSi/MoS2/AuNPs substrate endows it with the ability for the directional monitoring of organic pollutant in a mixture of oil and water. Finally, we demonstrated the MSCs with outstanding photocatalytic performance could achieve the renewable utilization by self-cleaning, which was attributed to the fast electron transfer and effective light absorption. The proposed PSi/MoS2/AuNPs MSC represents a robust mean using the plasmonic metal/semiconductor heterostructure for high-performance SERS sensors and photodegradation.

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Nanoscale spectroscopic imaging of GaAs-AlGaAs quantum well tube nanowires: Correlating luminescence with nanowire size and inner multishell structure

2019, Prete, P., Wolf, D., Marzo, F., Lovergine, N.

The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using lowerature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM) tomography, allowing for the first time a robust correlation between the luminescence properties of these nanowires and their size and inner 3D structure down to the nanoscale. Besides the core luminescence and minor defects-related contributions, each nanowire showed one or more QWT peaks associated with nanowire regions of different diameters. The values of the GaAs shell thickness corresponding to each QWT peak were then determined from the nanowire diameters by employing a multishell growth model upon validation against experimental data (core diameter and GaAs and AlGaAs shell thickness) obtained from the analysis of the 3D reconstructed STEM tomogram of a GaAs-AlGaAs QWT nanowire. We found that QWT peak energies as a function of thus-estimated (3-7 nm) GaAs shell thickness are 40-120 meV below the theoretical values of exciton recombination for uniform QWTs symmetrically wrapped around a central core. However, the analysis of the 3D tomogram further evidenced azimuthal asymmetries as well as (azimuthal and axial) random fluctuations of the GaAs shell thickness, suggesting that the red-shift of QWT emissions is prominently due to carrier localization. The CL mapping of QWT emission intensities along the nanowire axis allowed to directly image the nanoscale localization of the emission, supporting the above picture. Our findings contribute to a deeper understanding of the luminescence-structure relationship in QWT nanowires and will foster their applications as efficient nanolaser sources for future monolithic integration onto silicon.