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Now showing 1 - 9 of 9
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    Stable laser-ion acceleration in the light sail regime
    (College Park : American Institute of Physics Inc., 2013) Steinke, S.; Hilz, P.; Schnürer, M.; Priebe, G.; Bränzel, J.; Abicht, F.; Kiefer, D.; Kreuzer, C.; Ostermayr, T.; Schreiber, J.; Andreev, A.A.; Yu, T.P.; Pukhov, A.; Sandner, W.
    We present experimental results on ion acceleration with circularly polarized, ultrahigh contrast laser pulses focused to peak intensities of 5×1019 W cm-2 onto polymer targets of a few 10 nanometer thickness. We observed spatially and energetically separated protons and carbon ions that accumulate to pronounced peaks around 2 MeV containing as much as 6.5% of the laser energy. Based on particle-in-cell simulation, we illustrate that an early separation of heavier carbon ions and lighter protons creates a stable interface that is maintained beyond the end of the radiation pressure dominated acceleration process.
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    Experimentally minimized beam emittance from an L-band photoinjector
    (College Park : American Institute of Physics Inc., 2012) Krasilnikov, M.; Stephan, F.; Asova, G.; Grabosch, H.-J.; Groß, M.; Hakobyan, L.; Isaev, I.; Ivanisenko, Y.; Jachmann, L.; Khojoyan, M.; Klemz, G.; Köhler, W.; Mahgoub, M.; Malyutin, D.; Nozdrin, M.; Oppelt, A.; Otevrel, M.; Petrosyan, B.; Rimjaem, S.; Shapovalov, A.; Vashchenko, G.; Weidinger, S.; Wenndorff, R.; Flöttmann, K.; Hoffmann, M.; Lederer, S.; Schlarb, H.; Schreiber, S.; Templin, I.; Will, I.; Paramonov, V.; Richter, D.
    High brightness electron sources for linac based free-electron lasers (FELs) are being developed at the Photo Injector Test facility at DESY, Zeuthen site (PITZ). Production of electron bunches with extremely small transverse emittance is the focus of the PITZ scientific program. The photoinjector optimization in 2008-2009 for a bunch charge of 1, 0.5, 0.25, and 0.1nC resulted in measured emittance values which are beyond the requirements of the European XFEL. Several essential modifications were commissioned in 2010-2011 at PITZ, resulting in further improvement of the photoinjector performance. Significant improvement of the rf gun phase stability is a major contribution in the reduction of the measured transverse emittance. The old TESLA prototype booster was replaced by a new cut disk structure cavity. This allows acceleration of the electron beam to higher energies and supports much higher flexibility for stable booster operation as well as for longer rf pulses which is of vital importance especially for the emittance optimization of low charge bunches. The transverse phase space of the electron beam was optimized at PITZ for bunch charges in the range between 0.02 and 2nC, where the quality of the beam measurements was preserved by utilizing long pulse train operation. The experimental optimization yielded worldwide unprecedented low normalized emittance beams in the whole charge range studied.
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    Terahertz stimulated emission from silicon doped by hydrogenlike acceptors
    (College Park : American Institute of Physics Inc., 2014) Pavlov, S.G.; Deßmann, N.; Shastin, V.N.; Zhukavin, R.K.; Redlich, B.; van der Meer, A.F.G.; Mittendorff, M.; Winnerl, S.; Abrosimov, N.V.; Riemann, H.; Hübers, H.-W.
    Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Λ8+ → 1Λ7- , 1Λ6-, 1Λ8- intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Λ7- , 1Λ6- , and 1Λ8- states, and the lower laser level for both emission lines is the 2Λ8+ state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Λ8+ state and not the 1Λ7+ split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.
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    Optimization of quantum trajectories driven by strong-field waveforms
    (College Park : American Institute of Physics Inc., 2014) Haessler, S.; Balciunas, T.; Fan, G.; Andriukaitis, G.; Pugžlys, A.; Baltuška, A.; Witting, T.; Squibb, R.; Zaïr, A.; Tisch, J.W.G.; Marangos; Chipperfield, L.E.
    Quasifree field-driven electron trajectories are a key element of strong-field dynamics. Upon recollision with the parent ion, the energy transferred from the field to the electron may be released as attosecondduration extreme ultaviolet emission in the process of high-harmonic generation. The conventional sinusoidal driver fields set limitations on the maximum value of this energy transfer and the efficient return of the launched electron trajectories. It has been predicted that these limits can be significantly exceeded by an appropriately ramped-up cycle shape [L. E. Chipperfield et al., Phys. Rev. Lett. 102, 063003 (2009)]. Here, we present an experimental realization of similar cycle-shaped waveforms and demonstrate control of the high-harmonic generation process on the single-atom quantum level via attosecond steering of the electron trajectories.With our improved optical cycles, we boost the field ionization launching the electron trajectories, increase the subsequent field-to-electron energy transfer, and reduce the trajectory duration. We demonstrate, in realistic experimental conditions, 2 orders of magnitude enhancement of the generated extreme ultraviolet flux together with an increased spectral extension. This application, which is only one example of what can be achieved with cycle-shaped high-field light waves, has significant implications for attosecond spectroscopy and molecular self-probing.
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    Observation of discrete, vortex light bullets
    (College Park : American Institute of Physics Inc., 2014) Eilenberger, F.; Prater, K.; Minardi, S.; Geiss, R.; Röpke, U.; Kobelke, J.; Schuster, K.; Bartelt, H.; Nolte, S.; Tünnermann, A.; Pertsch, T.
    We report the first experimental observation of vortex light bullets that are discrete, spatiotemporal, solitary waves with orbital angular momentum. We analyze conditions for their existence and investigate their rich properties and dynamics. Vortex light bullets are excited in fiber arrays with spatially shaped femtosecond pulses and analyzed with a spatiotemporal cross correlator. Most importantly, we find that they have entirely new stability properties, being robust against considerable degrees of perturbation in a limited range of energies. All experimental findings are backed up by rigorous simulations, giving further insight into the rich dynamics of vortex light bullets.
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    Characterization of a superconducting Pb photocathode in a superconducting rf photoinjector cavity
    (College Park : American Institute of Physics Inc., 2013) Barday, R.; Burrill, A.; Jankowiak, A.; Kamps, T.; Knobloch, J.; Kugeler, O.; Matveenko, A.; Neumann, A.; Schmeißer, M.; Völker, J.; Kneisel, P.; Nietubyc, R.; Schubert, S.; Smedley, J.; Sekutowicz, J.; Will, I.
    Photocathodes are a limiting factor for the next generation of ultrahigh brightness photoinjectors. We studied the behavior of a superconducting Pb cathode in the cryogenic environment of a superconducting rf gun cavity to measure the quantum efficiency, its spatial distribution, and the work function. We will also discuss how the cathode surface contaminants modify the performance of the photocathode as well as the gun cavity and we discuss the possibilities to remove these contaminants.
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    Photoemission of Bi2Se3 with circularly polarized light: Probe of spin polarization or means for spin manipulation?
    (College Park : American Institute of Physics Inc., 2014) Sánchez-Barriga, J.; Varykhalov, A.; Braun, J.; Xu, S.-Y.; Alidoust, N.; Kornilov, O.; Minár, J.; Hummer, K.; Springholz, G.; Bauer, G.; Schumann, R.; Yashina, L.V.; Ebert, H.; Hasan, M.Z.; Rader, O.
    Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy.We solve this puzzle and show that vacuum ultraviolet photons (50-70 eV) with linear or circular polarization indeed probe the initial-state spin texture of Bi2Se3 while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.
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    On the electronic properties of a single dislocation
    (College Park : American Institute of Physics Inc., 2014) Reiche, M.; Kittler, M.; Erfurth, W.; Pippel, E.; Sklarek, K.; Blumtritt, H.; Haehnel, A.; Uebensee, H.
    A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm2, the current density through a single dislocation is J = 3.8 × 1012 A/cm2 corresponding to a resistivity of ρ ≅ 1 × 10-8 Ω cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.
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    Photophysics of polymeric carbon nitride: An optical quasimonomer
    (College Park : American Institute of Physics Inc., 2013) Merschjann, C.; Tyborski, T.; Orthmann, S.; Yang, F.; Schwarzburg, K.; Lublow, M.; Lux-Steiner, M.-C.; Schedel-Niedrig, T.
    A comprehensive investigation of the luminescent properties of carbon nitride polymers, based on tri-s-triazine units, has been conducted. Steady-state temperature- and excitation-power-dependent as well as time-resolved measurements with near-UV excitation (λ=325 nm and 405 nm) yield strong photoluminescence, covering the visible spectrum. The spectral, thermal, and temporal features of the photoluminescence can be satisfactorily described by the excitation and radiative recombination of molecular excitons, localized at single tri-s-triazine units. The discussed model is in accordance with the recently reported absorption features of carbon nitride polymers. Thus, from the point of view of optical spectroscopy, the material effectively behaves as a monomer.