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Now showing 1 - 10 of 10
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    Origin of a-plane (Al,Ga)N formation on patterned c-plane AIN/sapphire templates
    (Milton Park : Taylor & Francis, 2013) Mogilatenko, A.; Kirmse, H.; Hagedorn, S.; Richter, E.; Zeimer, U.; Weyers, M.; Tränkle, G.
    a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1bar 100]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [11bar 20](Al,Ga)N
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    Temperature-dependent electric noise level in different iron-based superconductors
    (Milton Park : Taylor & Francis, 2014) Barone, C.; Pagano, S.; Bellingeri, E.; Ferdeghini, C.; Adamo, M.; Sarnelli, E.; Yokoyama, K.; Kurth, F.; Holzapfel, B; Iida, K.
    The magnetic flux penetration into the melt-textured Y-Ba-Cu-O high temperature superconducting bulk magnets were precisely evaluated during and after the pulsed field magnetization processes operated at 30 K. The bulk magnets were carefully fabricated by the cold seeding method with use of a single and a pair of seed crystals composed of the Nd-Ba-Cu-O thin films. These seed crystals were put on the top surfaces of the precursors to let the large grains grow during the heat treatments. We observed the flux penetrations which occurred in the lower applied-field regions at around 3.1 T for the samples bearing the twin seeds than those of the single-seeded crystals at around 3.8 T. This means that the magnetic fluxes are capable of invading into the twin-seeded samples more easily than the single-seeds. It suggests that the anisotropic grain growths of parallel and normal to the rows of seed crystals affects the variations of Jc values with different distributions of the pinning centers, results in the preferential paths for the invading magnetic fluxes.
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    Magnetic tornadoes and chromospheric swirls – Definition and classification
    (Milton Park : Taylor & Francis, 2013) Wedemeyer, Sven; Scullion, Eamon; Steiner, Oskar; de la Cruz Rodriguez, Jaime; Rouppe van der Voort, Luc
    Chromospheric swirls are the observational signatures of rotating magnetic field structures in the solar atmosphere, also known as magnetic tornadoes. Swirls appear as dark rotating features in the core of the spectral line of singly ionized calcium at a wavelength of 854.2 nm. This signature can be very subtle and difficult to detect given the dynamic changes in the solar chromosphere. Important steps towards a systematic and objective detection method are the compilation and characterization of a statistically significant sample of observed and simulated chromospheric swirls. Here, we provide a more exact definition of the chromospheric swirl phenomenon and also present a first morphological classification of swirls with three types: (I) Ring, (II) Split, (III) Spiral. We also discuss the nature of the magnetic field structures connected to tornadoes and the influence of limited spatial resolution on the appearance of their photospheric footpoints.
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    Bicrystalline grain boundary junctions of Co-doped and P-doped Ba-122 thin films
    (Milton Park : Taylor & Francis, 2014) Schmidt, S.; Döring, S.; Schmidl, F.; Kurth, F.; Iida, K.; Holzapfel, B.; Kawaguchi, T.; Mori, Y.; Ikuta, H.; Seidel, P.
    We prepared GB junctions of Ba(Fe0.9Co0.1)2As2 thin films on bicrystalline [00 l]-tilt SrTiO3 substrates. The junctions show clear Josephson effects. Electrical characterization shows asymmetric I-V characteristics which can be described within the resistively shunted junction (RSJ) model. A large excess current is observed. Their formal ICRN product is 20.2 μV at 4.2 K, which is decreased to 6.5 μV when taking Iex into account. Fabrication methods to increase this value are discussed. Additionally, measurements on GB junctions of BaFe2(As0.66P0.34)2 thin films on LSAT bicrystalline substrates are shown. Their symmetric RSJ/flux flow-behavior exhibits a formal ICRN product of 45 μV, whereas the excess corrected value is ll μV.
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    Magnetic flux-trapping of anisotropic-grown Y-Ba-Cu-O bulk superconductors during and after pulsed-field magnetizing processes
    (Milton Park : Taylor & Francis, 2014) Oka, T.; Yamada, Y.; Horiuchi, T.; Ogawa, J.; Fukui, S.; Sato, T.; Yokoyama, K.; Langer, M.
    The magnetic flux penetration into the melt-textured Y-Ba-Cu-O high temperature superconducting bulk magnets were precisely evaluated during and after the pulsed field magnetization processes operated at 30 K. The bulk magnets were carefully fabricated by the cold seeding method with use of a single and a pair of seed crystals composed of the Nd-Ba-Cu-O thin films. These seed crystals were put on the top surfaces of the precursors to let the large grains grow during the heat treatments. We observed the flux penetrations which occurred in the lower applied-field regions at around 3.1 T for the samples bearing the twin seeds than those of the single-seeded crystals at around 3.8 T. This means that the magnetic fluxes are capable of invading into the twin-seeded samples more easily than the single-seeds. It suggests that the anisotropic grain growths of parallel and normal to the rows of seed crystals affects the variations of Jc values with different distributions of the pinning centers, results in the preferential paths for the invading magnetic fluxes.
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    Quasi-static and dynamic deformation behaviour of Zr-based bulk metallic glass
    (Milton Park : Taylor & Francis, 2013) Nekouie, V.; Kühn, U.; Roy, A.; Silberschmidt, V.
    Nano- and micro-indentation studies were carried out to characterise a plasticity mechanism through the evolution of localised shear bands that drive material's deformation at sub-micron length scale. Initial deformation of Zr-based bulk metallic glass (BMG) was investigated with nanoindentation tests using a spherical indenter. The indentation cycle reflects an elastic deformation with the yielding load of approx. 3 mN. For designed cycling indentation, hardening and softening phenomena were observed in nano- and micro-indentations, respectively. High-precision dynamic mechanical relaxation measurements were performed using a Dynamic Mechanical Analyzer (DMA), on decreasing frequency from 160 Hz to 0.1 Hz. A mechanical response of the BMG surface to a concentrated impact load was also studied. The obtained results indicated that the studied Zr-based BMG behaved as an elastic-perfectly plastic material at macroscale with discrete plasticity events at smaller length scales.
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    Investigation of the strain-sensitive superconducting transition of BaFe1.8Co0.2As2 thin films utilizing piezoelectric substrates
    (Milton Park : Taylor & Francis, 2014) Trommler, S.; Hänisch, J.; Iida, K.; Kurth, F.; Schultz, L.; Holzapfel, B.; Hühne, R.
    The preparation of biaxially textured BaFe1.8Co0.2As2 thin films has been optimized on MgO single crystals and transfered to piezoelectric (001) Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. By utilizing the inverse piezoelectric effect the lattice parameter of these substrates can be controlled applying an electric field, leading to a induction of biaxial strain into the superconducting layer. High electric fields were used to achieve a total strain of up to 0.05% at low temperatures. A sharpening of the resistive transition and a shift of about 0.6 K to higher temperatures was found at a compressive strain of 0.035%.
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    On the co-alignment of solar telescopes. A new approach to solar pointing
    (Milton Park : Taylor & Francis, 2013) Staiger, J.
    Helioseismological measurements require long observing times and thus may be adversely affected by lateral image drifts as caused by pointing instabilities. At the Vacuum Tower Telescope VTT, Tenerife we have recorded drift values of up to 5" per hour under unstable thermal conditions (dome opening, strong day-to-day thermal gradients). Typically drifts of 0.5" – 1.0" per hour may be encountered under more favorable conditions. Past experience has shown that most high-resolution solar telescopes may be affected by this problem to some degree. This inherent shortcoming of solar pointing is caused by the fact that the guiding loop can be closed only within the guiding beam but not within the telescope's main beam. We have developed a new approach to this problem. We correlate continuum brightness patterns observed from within the telescope main beam with patterns originating from a full disk telescope. We show that brightness patterns of sufficient size are unique with respect to solar location at any instant of time and may serve as a location identifier. We make use of the fact that averaged location information of solar structures is invariant with respect to telescope resolution. We have carried out tests at the VTT together with SDO. We have used SDO as a full disk reference. We were able to reduce lateral image drifts by an order of magnitude.
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    Normally-off GaN transistors for power applications
    (Milton Park : Taylor & Francis, 2014) Hilt, O.; Bahat-Treidel, E.; Brunner, F.; Knauer, A.; Zhytnytska, R.; Kotara, P.; Wuerfl, J.
    Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.
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    Cathodoluminescence and TEM investigations of structural and optical properties of AlGaN on epitaxial laterally overgrown AlN/sapphire templates
    (Milton Park : Taylor & Francis, 2013) Zeimer, U.; Mogilatenko, A.; Kueller, V.; Knauer, A.; Weyers, M.
    Surface steps as high as 15 nm on up to 10 μm thick AlN layers grown on patterned AlN/sapphire templates play a major role for the structural and optical properties of AlxGa1−xN layers with x ≥ 0.5 grown subsequently by metalorganic vapour phase epitaxy. The higher the Ga content in these layers is, the stronger is the influence of the surface morphology on their properties. For x = 0.5 not only periodic inhomogeneities in the Al content due to growth of Ga-rich facets are observed by cathodoluminescence, but these facets give rise to additional dislocation formation as discovered by annular dark-field scanning transmission electron microscopy. For AlxGa1−xN layers with x = 0.8 the difference in Al content between facets and surrounding material is much smaller. Therefore, the threading dislocation density (TDD) is only defined by the TDD in the underlying epitaxially laterally overgrown (ELO) AlN layer. This way high quality Al0.8Ga0.2N with a thickness up to 1.5 μm and a TDD ≤ 5x108 cm−2 was obtained.