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    Two-step magnetization reversal FORC fingerprint of coupled bi-segmented Ni/Co magnetic nanowire arrays
    (Basel : MDPI AG, 2018) Fernández, J.G.; Martínez, V.V.; Thomas, A.; de la Prida Pidal, V.M.; Nielsch, K.
    First Order Reversal Curve (FORC) analysis has been established as an appropriate method to investigate the magnetic interactions among complex ferromagnetic nanostructures. In this work, the magnetization reversal mechanism of bi-segmented nanowires composed by long Co and Ni segments contacted at one side was investigated, as a model system to identify and understand the FORC fingerprint of a two-step magnetization reversal process. The resulting hysteresis loop of the bi-segmented nanowire array exhibits a completely different magnetic behavior than the one expected for the magnetization reversal process corresponding to each respective Co and Ni nanowire arrays, individually. Based on the FORC analysis, two possible magnetization reversal processes can be distinguished as a consequence of the ferromagnetic coupling at the interface between the Ni and Co segments. Depending on the relative difference between the magnetization switching fields of each segment, the softer magnetic phase induces the switching of the harder one through the injection and propagation of a magnetic domain wall when both switching fields are comparable. On the other hand, if the switching fields values differ enough, the antiparallel magnetic configuration of nanowires is also possible but energetically unfavorable, thus resulting in an unstable magnetic configuration. Making use of the different temperature dependence of the magnetic properties for each nanowire segment with different composition, one of the two types of magnetization reversal is favored, as demonstrated by FORC analyses.
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    Nanoscale spectroscopic imaging of GaAs-AlGaAs quantum well tube nanowires: Correlating luminescence with nanowire size and inner multishell structure
    (Berlin : De Gruyter, 2019) Prete, P.; Wolf, D.; Marzo, F.; Lovergine, N.
    The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using lowerature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM) tomography, allowing for the first time a robust correlation between the luminescence properties of these nanowires and their size and inner 3D structure down to the nanoscale. Besides the core luminescence and minor defects-related contributions, each nanowire showed one or more QWT peaks associated with nanowire regions of different diameters. The values of the GaAs shell thickness corresponding to each QWT peak were then determined from the nanowire diameters by employing a multishell growth model upon validation against experimental data (core diameter and GaAs and AlGaAs shell thickness) obtained from the analysis of the 3D reconstructed STEM tomogram of a GaAs-AlGaAs QWT nanowire. We found that QWT peak energies as a function of thus-estimated (3-7 nm) GaAs shell thickness are 40-120 meV below the theoretical values of exciton recombination for uniform QWTs symmetrically wrapped around a central core. However, the analysis of the 3D tomogram further evidenced azimuthal asymmetries as well as (azimuthal and axial) random fluctuations of the GaAs shell thickness, suggesting that the red-shift of QWT emissions is prominently due to carrier localization. The CL mapping of QWT emission intensities along the nanowire axis allowed to directly image the nanoscale localization of the emission, supporting the above picture. Our findings contribute to a deeper understanding of the luminescence-structure relationship in QWT nanowires and will foster their applications as efficient nanolaser sources for future monolithic integration onto silicon.