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DDC: 530 × Subject: Anomalous hall effects ×

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    From Colossal to Zero: Controlling the Anomalous Hall Effect in Magnetic Heusler Compounds via Berry Curvature Design
    (College Park, MD : American Physical Society, 2018) Manna, K.; Muechler, L.; Kao, T.-H.; Stinshoff, R.; Zhang, Y.; Gooth, J.; Kumar, N.; Kreiner, G.; Koepernik, K.; Car, R.; Kübler, J.; Fecher, G.H.; Shekhar, C.; Sun, Y.; Felser, C.
    Since the discovery of the anomalous Hall effect (AHE), the anomalous Hall conductivity (AHC) has been thought to be zero when there is no net magnetization. However, the recently found relation between the intrinsic AHE and the Berry curvature predicts other possibilities, such as a large AHC in noncolinear antiferromagnets with no net magnetization but net Berry curvature. Vice versa, the AHE in principle could be tuned to zero, irrespective of a finite magnetization. Here, we experimentally investigate this possibility and demonstrate that the symmetry elements of Heusler magnets can be changed such that the Berry curvature and all the associated properties are switched while leaving the magnetization unaffected. This enables us to tune the AHC from 0 Ω-1 cm-1 up to 1600 Ω-1 cm-1 with an exceptionally high anomalous Hall angle up to 12%, while keeping the magnetization the same. Our study shows that the AHC can be controlled by selectively changing the Berry curvature distribution, independent of the magnetization.
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    Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7: A Bi2Te3 Derivative with a Periodic Mn Sublattice
    (College Park, MD : American Physical Society, 2019) Vidal, R.C.; Zeugner, A.; Facio, J.I.; Ray, R.; Haghighi, M.H.; Wolter, A.U.B.; Corredor, Bohorquez, L.T.; Caglieris, F.; Moser, S.; Figgemeier, T.; Peixoto, T.R.F.; Vasili, H.B.; Valvidares, M.; Jung, S.; Cacho, C.; Alfonsov, A.; Mehlawat, K.; Kataev, V.; Hess, C.; Richter, M.; Büchner, B.; Van Den Brink, J.; Ruck, M.; Reinert, F.; Bentmann, H.; Isaeva, A.
    Combinations of nontrivial band topology and long-range magnetic order hold promise for realizations of novel spintronic phenomena, such as the quantum anomalous Hall effect and the topological magnetoelectric effect. Following theoretical advances, material candidates are emerging. Yet, so far a compound that combines a band-inverted electronic structure with an intrinsic net magnetization remains unrealized. MnBi2Te4 has been established as the first antiferromagnetic topological insulator and constitutes the progenitor of a modular (Bi2Te3)n(MnBi2Te4) series. Here, for n=1, we confirm a nonstoichiometric composition proximate to MnBi4Te7. We establish an antiferromagnetic state below 13 K followed by a state with a net magnetization and ferromagnetic-like hysteresis below 5 K. Angle-resolved photoemission experiments and density-functional calculations reveal a topologically nontrivial surface state on the MnBi4Te7(0001) surface, analogous to the nonmagnetic parent compound Bi2Te3. Our results establish MnBi4Te7 as the first band-inverted compound with intrinsic net magnetization providing a versatile platform for the realization of magnetic topological states of matter.