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DDC: 530 × Subject: Density functional theory ×

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    Visualization of localized perturbations on a (001) surface of the ferromagnetic semimetal EuB6
    (College Park, MD : American Physical Society, 2020) Rößler, S.; Jiao, L.; Seiro, S.; Rosa, P.F.S.; Fisk, Z.; Rößler, U.K.; Wirth, S.
    We performed scanning tunneling microscopy (STM) and spectroscopy on a (001) surface of the ferromagnetic semimetal EuB6. Large-amplitude oscillations emanating from the elastic scattering of electrons by the surface impurities are observed in topography and in differential conductance maps. Fourier transform of the conductance maps embracing these regions indicate a holelike dispersion centered around the Γ point of the two-dimensional Brillouin zone. Using density functional theory slab calculations, we identify a spin-split surface state, which stems from the dangling pz orbitals of the apical boron atom. Hybridization with bulk electronic states leads to a resonance enhancement in certain regions around the Γ point, contributing to the remarkably strong real-space response around static point defects, which are observed in STM measurements.
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    Mechanical properties and twin boundary drag in Fe-Pd ferromagnetic shape memory foils-experiments and ab initio modeling
    (Bristol : IOP, 2011) Claussen, I.; Mayr, S.G.
    We report on vibrating reed measurements combined with density functional theory-based calculations to assess the elastic and damping properties of Fe-Pd ferromagnetic shape memory alloy splats. While the austenite-martensite phase transformation is generally accompanied by lattice softening, a severe modulus defect and elevated damping behavior are characteristic of the martensitic state. We interpret the latter in terms of twin boundary motion between pinning defects via partial 'twinning' dislocations. Energy dissipation is governed by twin boundary drag, primarily due to lattice imperfections, as concluded from the temperature dependence of damping and related activation enthalpies.
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    Experimental electronic structure of In2O3 and Ga2O3
    (Bristol : IOP, 2011) Janowitz, C.; Scherer, V.; Mohamed, M.; Krapf, A.; Dwelk, H.; Manzke, R.; Galazka, Z.; Uecker, R.; Irmscher, K.; Fornari, R.; Michling, M.; Schmeißer, D.; Weber, J.R.; Varley, J.B.; Van De Walle, C.G.
    Transparent conducting oxides (TCOs) pose a number of serious challenges. In addition to the pursuit of high-quality single crystals and thin films, their application has to be preceded by a thorough understanding of their peculiar electronic structure. It is of fundamental interest to understand why these materials, transparent up to the UV spectral regime, behave also as conductors. Here we investigate In2O3 and Ga2O3, two binary oxides, which show the smallest and largest optical gaps among conventional n-type TCOs. The investigations on the electronic structure were performed on high-quality n-type single crystals showing carrier densities of ∼1019 cm-3 (In2O3) and ∼1017 cm-3(Ga2O3). The subjects addressed for both materials are: the determination of the band structure along high-symmetry directions and fundamental gaps by angular resolved photoemission (ARPES). We also address the orbital character of the valence- and conduction-band regions by exploiting photoemission cross.
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    Ferroelectric switching in epitaxial GeTe films
    (New York : American Institute of Physics, 2014) Kolobov, A.V.; Kim, D.J.; Giussani, A.; Fons, P.; Tominaga, J.; Calarco, R.; Gruverman, A.
    In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.
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    Pinning of the Fermi Level in CuFeO2 by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting
    (Weinheim : Wiley-VCH Verlag, 2020) Hermans Y.; Klein A.; Sarker H.P.; Huda M.N.; Junge H.; Toupance T.; Jaegermann W.
    CuFeO2 is recognized as a potential photocathode for photo(electro)chemical water splitting. However, photocurrents with CuFeO2-based systems are rather low so far. In order to optimize charge carrier separation and water reduction kinetics, defined CuFeO2/Pt, CuFeO2/Ag, and CuFeO2/NiOx(OH)y heterostructures are made in this work through a photodeposition procedure based on a 2H CuFeO2 hexagonal nanoplatelet shaped powder. However, water splitting performance tests in a closed batch photoreactor show that these heterostructured powders exhibit limited water reduction efficiencies. To test whether Fermi level pinning intrinsically limits the water reduction capacity of CuFeO2, the Fermi level tunability in CuFeO2 is evaluated by creating CuFeO2/ITO and CuFeO2/H2O interfaces and analyzing the electronic and chemical properties of the interfaces through photoelectron spectroscopy. The results indicate that Fermi level pinning at the Fe3+/Fe2+ electron polaron formation level may intrinsically prohibit CuFeO2 from acquiring enough photovoltage to reach the water reduction potential. This result is complemented with density functional theory calculations as well. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim