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DDC: 530 × Subject: Electron transport ×

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    Enhanced reliability of drift-diffusion approximation for electrons in fluid models for nonthermal plasmas
    (New York, NY : American Inst. of Physics, 2013) Becker, M.M.; Loffhagen, D.
    Common fluid models used for the description of electron transport in nonthermal discharge plasmas are subject to substantial restrictions if the electron energy transport significantly influences the discharge behaviour. A drift-diffusion approach is presented which is based on a multiterm approximation of the electron velocity distribution function and overcomes some of these restrictions. It is validated using a benchmark model and applied for the analysis of argon discharge plasmas at low and atmospheric pressure. The results are compared to those of common drift-diffusion models as well as to experimental data. It is pointed out that fluid models are able to describe nonlocal phenomena caused by electron energy transport, if the energy transport is consistently described. Numerical difficulties that frequently occur when the conventional drift-diffusion model is consistently applied are avoided by the proposed method.
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    From atomistic tight-binding theory to macroscale drift–diffusion: Multiscale modeling and numerical simulation of uni-polar charge transport in (In,Ga)N devices with random fluctuations
    (Melville, NY : American Inst. of Physics, 2021) O’Donovan, Michael; Chaudhuri, Debapriya; Streckenbach, Timo; Farrell, Patricio; Schulz, Stefan; Koprucki, Thomas
    Random alloy fluctuations significantly affect the electronic, optical, and transport properties of (In,Ga)N-based optoelectronic devices. Transport calculations accounting for alloy fluctuations currently use a combination of modified continuum-based models, which neglect to a large extent atomistic effects. In this work, we present a model that bridges the gap between atomistic theory and macroscopic transport models. To do so, we combine atomistic tight-binding theory and continuum-based drift–diffusion solvers, where quantum corrections are included via the localization landscape method. We outline the ingredients of this framework in detail and present first results for uni-polar electron transport in single and multi- (In,Ga)N quantum well systems. Overall, our results reveal that both random alloy fluctuations and quantum corrections significantly affect the current–voltage characteristics of uni-polar electron transport in such devices. However, our investigations indicate that the importance of quantum corrections and random alloy fluctuations can be different for single and multi-quantum well systems.