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DDC: 530 × Subject: Electronic materials ×

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    Photoluminescence at room temperature of liquid-phase crystallized silicon on glass
    (New York, NY : American Inst. of Physics, 2016) Vetter, Michael; Schwuchow, Anka; Andrä, Gudrun
    The room temperature photoluminescence (PL) spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.
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    Autocorrected off-axis holography of two-dimensional materials
    (College Park, ML : American Physical Society, 2020) Kern, Felix; Linck, Martin; Wolf, Daniel; Alem, Nasim; Arora, Himani; Gemming, Sibylle; Erbe, Artur; Zettl, Alex; Büchner, Bernd; Lubk, Axel
    The reduced dimensionality in two-dimensional materials leads to a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high-resolution microscopy techniques are indispensable. Here we report on the development of an electron holography (EH) transmission electron microscopy (TEM) technique, which facilitates high spatial resolution by an automatic correction of geometric aberrations. Distinguished features of EH beyond conventional TEM imaging are gap-free spatial information signal transfer and higher dose efficiency for certain spatial frequency bands as well as direct access to the projected electrostatic potential of the two-dimensional material. We demonstrate these features with the example of h-BN, for which we measure the electrostatic potential as a function of layer number down to the monolayer limit and obtain evidence for a systematic increase of the potential at the zig-zag edges.