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    High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
    (New York : American Institute of Physics, 2016) Yeh, Chia-Pin; Lisker, Marco; Kalkofen, Bodo; Burte, Edmund P.
    Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.
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    Addition of Iridium to the Biopolymer Mediated Synthesis of YBa2Cu3O7 δ
    (Amsterdam [u.a.] : Elsevier, 2012) Wimbush, Stuart C.; Marx, Werner; Barth, Andreas; Hall, Simon R.
    This work represents the first study into the addition of iridium into the solgel synthesis of the high temperature superconductor YBa2Cu3O7δ (Y123). Through a biopolymermediated synthetic approach, the homogeneous nature of the precursor sol and the preferred nucleation and growth of Y123 phases allow for a high yield of superconducting nanoparticles with no suppression of the superconducting critical temperature, even at high levels (40 wt%) of iridium addition. We attribute this to iridium not substituting into the Y123 crystal lattice, instead forming an associate phase.