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Now showing 1 - 4 of 4
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    Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots
    (Bristol : IOP Publ., 2018) Lazić, S.; Chernysheva, E.; Hernández-Mínguez, A.; Santos, P.V.; van der Meulen, H.P.
    On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface acoustic waves (SAWs). The SAWs are excited on the surface of a piezoelectric lithium niobate crystal equipped with a SAW delay line onto which the NWs were mechanically transferred. Luminescent quantum dot (QD)-like exciton localization centers induced by compositional fluctuations within the InGaN nanoshell were identified using stroboscopic micro-photoluminescence (micro-PL) spectroscopy. They exhibit narrow and almost fully linearly polarized emission lines in the micro-PL spectra and a pronounced anti-bunching signature of single photon emission in the photon correlation experiments. When the nanowire is perturbed by the propagating SAW, the embedded QD is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling, giving rise to a spectral fine-tuning within a ~1.5 meV bandwidth at the acoustic frequency of ~330 MHz. This outcome can be further combined with spectral detection filtering for temporal control of the emitted photons. The effect of the SAW piezoelectric field on the QD charge population and on the optical polarization degree is also observed. The advantage of the acousto-optoelectric over other control schemes is that it allows in-situ manipulation of the optical emission properties over a wide frequency range (up to GHz frequencies).
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    Glow discharge optical emission spectrometry for quantitative depth profiling of CIGS thin-films
    (Cambridge : Royal Society of Chemistry, 2019) Kodalle, T.; Greiner, D.; Brackmann, V.; Prietzel, K.; Scheu, A.; Bertram, T.; Reyes-Figueroa, P.; Unold, T.; Abou-Ras, D.; Schlatmann, R.; Kaufmann, C.A.; Hoffmann, V.
    Determining elemental distributions dependent on the thickness of a sample is of utmost importance for process optimization in different fields e.g. from quality control in the steel industry to controlling doping profiles in semiconductor labs. Glow discharge optical emission spectrometry (GD-OES) is a widely used tool for fast measurements of depth profiles. In order to be able to draw profound conclusions from GD-OES profiles, one has to optimize the measurement conditions for the given application as well as to ensure the suitability of the used emission lines. Furthermore a quantification algorithm has to be implemented to convert the measured properties (intensity of the emission lines versus sputtering time) to more useful parameters, e.g. the molar fractions versus sample depth (depth profiles). In this contribution a typical optimization procedure of the sputtering parameters is adapted to the case of polycrystalline Cu(In,Ga)(S,Se)2 thin films, which are used as absorber layers in solar cell devices, for the first time. All emission lines used are shown to be suitable for the quantification of the depth profiles and a quantification routine based on the assumption of constant emission yield is used. The accuracy of this quantification method is demonstrated on the basis of several examples. The bandgap energy profile of the compound semiconductor, as determined by the elemental distributions, is compared to optical measurements. The depth profiles of Na-the main dopant in these compounds-are correlated with measurements of the open-circuit voltage of the corresponding devices, and the quantification of the sample depth is validated by comparison with profilometry and X-ray fluorescence measurements.
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    Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride
    (London : Springer Nature, 2019) Lazić, Snežana; Espinha, André; Yanguas, Sergio Pinilla; Gibaja, Carlos; Zamora, Félix; Ares, Pablo; Chhowalla, Manish; Paz, Wendel S.; Palacios Burgos, Juan José; Hernández-Mínguez, Alberto; Santos, Paulo V.; van der Meulen, Herko P.
    Luminescent defects in hexagonal boron nitride (h-BN) have recently emerged as a promising platform for non-classical light emission. On-chip solutions, however, require techniques for controllable in-situ manipulation of quantum light. Here, we demonstrate the dynamic spectral and temporal tuning of the optical emission from h-BN via moving acousto-mechanical modulation induced by stimulated phonons. When perturbed by the propagating acoustic phonon, the optically probed radiative h-BN defects are periodically strained and their sharp emission lines are modulated by the deformation potential coupling. This results in an acoustically driven spectral tuning within a 2.5-meV bandwidth. Our findings, supported by first-principles theoretical calculations, reveal exceptionally high elasto-optic coupling in h-BN of ~50 meV/%. Temporal control of the emitted photons is achieved by combining the acoustically mediated fine-spectral tuning with spectral detection filtering. This study opens the door to the use of sound for scalable integration of h-BN emitters in nanophotonic and quantum information technologies. © 2019, The Author(s).
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    Water nanostructure formation on oxide probed in situ by optical resonances
    (Washington : American Association for the Advancement of Science (A A A S), 2019) Yin, Y.; Wang, J.; Wang, X.; Li, S.; Jorgensen, M.R.; Ren, J.; Meng, S.; Ma, L.; Schmidt, O.G.
    The dynamic characterization of water multilayers on oxide surfaces is hard to achieve by currently available techniques. Despite this, there is an increasing interest in the evolution of water nanostructures on oxides to fully understand the complex dynamics of ice nucleation and growth in natural and artificial environments. Here, we report the in situ detection of the dynamic evolution of nanoscale water layers on an amorphous oxide surface probed by optical resonances. In the water nanolayer growth process, we find an initial nanocluster morphology that turns into a planar layer beyond a critical thickness. In the reverse process, the planar water film converts to nanoclusters, accompanied by a transition from a planar amorphous layer to crystalline nanoclusters. Our results are explained by a simple thermodynamic model as well as kinetic considerations. Our work represents an approach to reveal the nanostructure and dynamics at the water-oxide interface using resonant light probing.