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- ItemSelf-Assembled Flexible and Integratable 3D Microtubular Asymmetric Supercapacitors(Chichester : John Wiley and Sons Ltd, 2019) Li, F.; Wang, J.; Liu, L.; Qu, J.; Li, Y.; Bandari, V.K.; Karnaushenko, D.; Becker, C.; Faghih, M.; Kang, T.; Baunack, S.; Zhu, M.; Zhu, F.; Schmidt, O.G.The rapid development of microelectronics has equally rapidly increased the demand for miniaturized energy storage devices. On-chip microsupercapacitors (MSCs), as promising power candidates, possess great potential to complement or replace electrolytic capacitors and microbatteries in various applications. However, the areal capacities and energy densities of the planar MSCs are commonly limited by the low voltage window, the thin layer of the electrode materials and complex fabrication processes. Here, a new-type three-dimensional (3D) tubular asymmetric MSC with small footprint area, high potential window, ultrahigh areal energy density, and long-term cycling stability is fabricated with shapeable materials and photolithographic technologies, which are compatible with modern microelectronic fabrication procedures widely used in industry. Benefiting from the novel architecture, the 3D asymmetric MSC displays an ultrahigh areal capacitance of 88.6 mF cm−2 and areal energy density of 28.69 mW h cm−2, superior to most reported interdigitated MSCs. Furthermore, the 3D tubular MSCs demonstrate remarkable cycling stability and the capacitance retention is up to 91.8% over 12 000 cycles. It is believed that the efficient fabrication methodology can be used to construct various integratable microscale tubular energy storage devices with small footprint area and high performance for miniaturized electronics.
- ItemControl of etch pit formation for epitaxial growth of graphene on germanium(Melville, NY : American Inst. of Physics, 2019) Becker, Andreas; Wenger, Christian; Dabrowski, JarekGraphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate graphene into microelectronics, but the synthesis is still accompanied by several challenges such as the high process temperature, the reproducibility of growth, and the formation of etch pits during the process. We show that the substrate cleaning by preannealing in molecular hydrogen, which is crucial to successful and reproducible graphene growth, requires a high temperature and dose. During both substrate cleaning and graphene growth, etch pits can develop under certain conditions and disrupt the synthesis process. We explain the mechanisms how these etch pits may form by preferential evaporation of substrate, how substrate topography is related to the state of the cleaning process, and how etch pit formation during graphene growth can be controlled by choice of a sufficiently high precursor flow. Our study explains how graphene can be grown reliably on germanium at high temperature and thereby lays the foundation for further optimization of the growth process. © 2019 Author(s).