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DDC: 530 × Subject: Molecular hydrogen ×

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    Excitation of H2 at large internuclear separation: F1∑+g outer well states and continuum resonances
    (London : Taylor & Francis, 2019) Trivikram, T.M.; Salumbides, E.J.; Jungen, Ch.; Ubachs, W.
    Bound and free quantum resonances of molecular hydrogen exhibiting wave-function density at large internuclear separation, (Formula presented.) 4–5 a.u., are excited via multi-step laser spectroscopy. Highly excited vibrational levels of H (Formula presented.) are prepared via two-photon UV-photolysis of H (Formula presented.) S. Subsequent two-photon Doppler-free precision measurements are performed connecting (Formula presented.) levels with (Formula presented.) outer-well levels. Detection and spectroscopic labelling of the quantum states is assisted by further laser excitation into the auto-ionisation continuum employing a third UV-laser. Level energies of high rotational states ((Formula presented.)) in the outer-well state (Formula presented.) are accurately determined. The three-laser study demonstrates a method for probing resonances in the H (Formula presented.) ionisation continuum with wave-function density at large internuclear separation (Formula presented.) 4–5 a.u., large angular momenta J, and energy range 131,100–133,000 cm-1, a hitherto unexplored territory. © 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.
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    Control of etch pit formation for epitaxial growth of graphene on germanium
    (Melville, NY : American Inst. of Physics, 2019) Becker, Andreas; Wenger, Christian; Dabrowski, Jarek
    Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate graphene into microelectronics, but the synthesis is still accompanied by several challenges such as the high process temperature, the reproducibility of growth, and the formation of etch pits during the process. We show that the substrate cleaning by preannealing in molecular hydrogen, which is crucial to successful and reproducible graphene growth, requires a high temperature and dose. During both substrate cleaning and graphene growth, etch pits can develop under certain conditions and disrupt the synthesis process. We explain the mechanisms how these etch pits may form by preferential evaporation of substrate, how substrate topography is related to the state of the cleaning process, and how etch pit formation during graphene growth can be controlled by choice of a sufficiently high precursor flow. Our study explains how graphene can be grown reliably on germanium at high temperature and thereby lays the foundation for further optimization of the growth process. © 2019 Author(s).