Filters

20192

More filters

2020 - 20212
Reset filters

Settings

DDC: 530 × Subject: Nanowires × Subject: Semiconductor quantum wells × WGL Institute: IFWD ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Nanoscale spectroscopic imaging of GaAs-AlGaAs quantum well tube nanowires: Correlating luminescence with nanowire size and inner multishell structure
    (Berlin : De Gruyter, 2019) Prete, P.; Wolf, D.; Marzo, F.; Lovergine, N.
    The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using lowerature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM) tomography, allowing for the first time a robust correlation between the luminescence properties of these nanowires and their size and inner 3D structure down to the nanoscale. Besides the core luminescence and minor defects-related contributions, each nanowire showed one or more QWT peaks associated with nanowire regions of different diameters. The values of the GaAs shell thickness corresponding to each QWT peak were then determined from the nanowire diameters by employing a multishell growth model upon validation against experimental data (core diameter and GaAs and AlGaAs shell thickness) obtained from the analysis of the 3D reconstructed STEM tomogram of a GaAs-AlGaAs QWT nanowire. We found that QWT peak energies as a function of thus-estimated (3-7 nm) GaAs shell thickness are 40-120 meV below the theoretical values of exciton recombination for uniform QWTs symmetrically wrapped around a central core. However, the analysis of the 3D tomogram further evidenced azimuthal asymmetries as well as (azimuthal and axial) random fluctuations of the GaAs shell thickness, suggesting that the red-shift of QWT emissions is prominently due to carrier localization. The CL mapping of QWT emission intensities along the nanowire axis allowed to directly image the nanoscale localization of the emission, supporting the above picture. Our findings contribute to a deeper understanding of the luminescence-structure relationship in QWT nanowires and will foster their applications as efficient nanolaser sources for future monolithic integration onto silicon.
  • Thumbnail Image
    Item
    Transition to the quantum hall regime in InAs nanowire cross-junctions
    (Bristol : IOP Publ., 2019) Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Bologna, Nicolas; Rossell, Marta D.; Wirths, Stephan; Moselund, Kirsten; Nielsch, Kornelius; Riel, Heike
    We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2 /h) -1 . e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase. © 2019 IOP Publishing Ltd.