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DDC: 530 × Subject: Optical emission spectroscopy ×

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    On the interaction of a microwave excited oxygen plasma with a jet of precursor material for deposition applications
    (Praha : Czech Technical University in Prague, Faculty of Electrical Engineering, Department of Physics, 2019) Methling, R.; Hempel, F.; Baeva, M.; Trautvetter, T.; Baierl, H.; Foest, R.
    A plasma source based on a microwave discharge at atmospheric pressure is used to produce an oxygen plasma torch. A liquid precursor material is evaporated and injected into the torch through a nozzle, causing oxidization and deposition of silica at a nearby quartz substrate. The temperature generated inside the plasma source and in the plume, in the region of treatment, and at the substrate surface are key parameters, which are needed for process description and optimization of plasma-chemical reactions. Optical emission spectroscopy and thermography were applied to observe and characterize the jet behavior and composition. The experimental results are compared with self-consistent modeling.
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    Glow discharge optical emission spectrometry for quantitative depth profiling of CIGS thin-films
    (Cambridge : Royal Society of Chemistry, 2019) Kodalle, T.; Greiner, D.; Brackmann, V.; Prietzel, K.; Scheu, A.; Bertram, T.; Reyes-Figueroa, P.; Unold, T.; Abou-Ras, D.; Schlatmann, R.; Kaufmann, C.A.; Hoffmann, V.
    Determining elemental distributions dependent on the thickness of a sample is of utmost importance for process optimization in different fields e.g. from quality control in the steel industry to controlling doping profiles in semiconductor labs. Glow discharge optical emission spectrometry (GD-OES) is a widely used tool for fast measurements of depth profiles. In order to be able to draw profound conclusions from GD-OES profiles, one has to optimize the measurement conditions for the given application as well as to ensure the suitability of the used emission lines. Furthermore a quantification algorithm has to be implemented to convert the measured properties (intensity of the emission lines versus sputtering time) to more useful parameters, e.g. the molar fractions versus sample depth (depth profiles). In this contribution a typical optimization procedure of the sputtering parameters is adapted to the case of polycrystalline Cu(In,Ga)(S,Se)2 thin films, which are used as absorber layers in solar cell devices, for the first time. All emission lines used are shown to be suitable for the quantification of the depth profiles and a quantification routine based on the assumption of constant emission yield is used. The accuracy of this quantification method is demonstrated on the basis of several examples. The bandgap energy profile of the compound semiconductor, as determined by the elemental distributions, is compared to optical measurements. The depth profiles of Na-the main dopant in these compounds-are correlated with measurements of the open-circuit voltage of the corresponding devices, and the quantification of the sample depth is validated by comparison with profilometry and X-ray fluorescence measurements.